1. Date of download: 6/22/2016 Copyright © ASME. All rights reserved. From: Efficiency Enhancement of GaAs Solar Cell Using Luminescent Down-Shifting Layer Consisting of (CdSe)ZnS Quantum Dots With Calculation and Experiment J. Sol. Energy Eng. 2014;137(2):021011-021011-7. doi:10.1115/1.4028700 (a) Normalized absorption and emission characteristics of the (CdSe)ZnS quantum dot. (b) Normalized EQE of the GaAs and c-Si solar cells. The absorption and emission plots are normalized for a peak value of unity. Figure Legend:

2. Date of download: 6/22/2016 Copyright © ASME. All rights reserved. From: Efficiency Enhancement of GaAs Solar Cell Using Luminescent Down-Shifting Layer Consisting of (CdSe)ZnS Quantum Dots With Calculation and Experiment J. Sol. Energy Eng. 2014;137(2):021011-021011-7. doi:10.1115/1.4028700 (a) Changes in the solar spectrum as a function of QD concentration in the LDS layer. (b) Irradiance as a function of QD concentration with different luminescent quantum efficiencies. Figure Legend:

3. Date of download: 6/22/2016 Copyright © ASME. All rights reserved. From: Efficiency Enhancement of GaAs Solar Cell Using Luminescent Down-Shifting Layer Consisting of (CdSe)ZnS Quantum Dots With Calculation and Experiment J. Sol. Energy Eng. 2014;137(2):021011-021011-7. doi:10.1115/1.4028700 Calculated maximum energy-conversion efficiency of the (a) GaAs and (b) c-Si solar cells as a function of QD concentration with various luminescent quantum efficiencies of QDs. While the energy-conversion efficiency of the GaAs solar cell was improved with the LDS layer, the c-Si solar cell showed negative effect of the LDS layer. Figure Legend:

4. Date of download: 6/22/2016 Copyright © ASME. All rights reserved. From: Efficiency Enhancement of GaAs Solar Cell Using Luminescent Down-Shifting Layer Consisting of (CdSe)ZnS Quantum Dots With Calculation and Experiment J. Sol. Energy Eng. 2014;137(2):021011-021011-7. doi:10.1115/1.4028700 Current density–voltage characteristics of the GaAs solar cell with and without LDS layers using two different host materials: (a) invisisil and (b) PDMS. Both cases show increased efficiencies when the LDS layer contained 30 μM of QD. Figure Legend:

5. Date of download: 6/22/2016 Copyright © ASME. All rights reserved. From: Efficiency Enhancement of GaAs Solar Cell Using Luminescent Down-Shifting Layer Consisting of (CdSe)ZnS Quantum Dots With Calculation and Experiment J. Sol. Energy Eng. 2014;137(2):021011-021011-7. doi:10.1115/1.4028700 Comparison of energy differences between calculation and experiment results Figure Legend:

6. Date of download: 6/22/2016 Copyright © ASME. All rights reserved. From: Efficiency Enhancement of GaAs Solar Cell Using Luminescent Down-Shifting Layer Consisting of (CdSe)ZnS Quantum Dots With Calculation and Experiment J. Sol. Energy Eng. 2014;137(2):021011-021011-7. doi:10.1115/1.4028700 Current density–voltage characteristics of the c-Si solar cell with the fabricated LDS layer. The short-circuit current decreased when the LDS layer was utilized. Figure Legend: