1. Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Energetic positions of intermediate band (IB) in the various SiC polytypes. In intermediate band solar cells (IBSCs), electrons can be excited from the VB to the CB in two steps via an IB. Figure Legend: From: Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics J. Photon. Energy. 2014;4(1):042098. doi:10.1117/1.JPE.4.042098

2. Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Transition metals doped in 2×2×1 supper-cell structures of (a) 3C-SiC and (b) 6H-SiC. Figure Legend: From: Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics J. Photon. Energy. 2014;4(1):042098. doi:10.1117/1.JPE.4.042098

3. Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Optimal efficiency for IBSCs at 1000 suns as a function of the subbands for (a) AM1.5 and (b) AM0 solar spectra. Efficiencies for 3C-SiC are along the dashed line indicated in these figures. Figure Legend: From: Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics J. Photon. Energy. 2014;4(1):042098. doi:10.1117/1.JPE.4.042098

4. Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Calculated efficiency as a function of the IB position for 3C-SiC under (a) AM1.5 and (b) AM0 spectra and for 6H-SiC under (c) AM1.5 and (d) AM0 spectra, respectively. Figure Legend: From: Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics J. Photon. Energy. 2014;4(1):042098. doi:10.1117/1.JPE.4.042098

5. Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Si-C and Ni-C bond lengths ( Å ) in (a) undoped 3C-SiC and (b) Ni-doped 3C-SiC. Figure Legend: From: Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics J. Photon. Energy. 2014;4(1):042098. doi:10.1117/1.JPE.4.042098

6. Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. The band structures of intrinsic (a) 3C-SiC and (b) 6H-SiC. Figure Legend: From: Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics J. Photon. Energy. 2014;4(1):042098. doi:10.1117/1.JPE.4.042098

7. Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. The band structures of (a) Ni-doped 3C-SiC and (b) Mn-doped 6H-SiC (the insets show the calculated energy gaps between SiC— VBs and IB). Figure Legend: From: Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics J. Photon. Energy. 2014;4(1):042098. doi:10.1117/1.JPE.4.042098

8. Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Partial density of states (PDOS) and total density of states for (a) C, Si, and Ni atoms in the Ni-doped 3C-SiC and (b) C, Si, and Mn atoms in the Mn-doped 6H-SiC. Figure Legend: From: Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics J. Photon. Energy. 2014;4(1):042098. doi:10.1117/1.JPE.4.042098

9. Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. The absorption coefficient of (a) host and Ni-doped 3C-SiC and (b) host and Mn-doped 6H-SiC. Figure Legend: From: Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics J. Photon. Energy. 2014;4(1):042098. doi:10.1117/1.JPE.4.042098