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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Schematic of the axisymmetric ‘Plate-model’. Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Schematic of the ‘Hankel-model’. Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Finite element mesh refinement of the reticle, particle, and chuck (coarse mesh for illustration). Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Benchmark example: Comparing the OPD and IPD (at reticle level) of the ‘Plate-,’ ‘Hankel-,’ and ‘FE-model’ for a cylindrical AlOxide particle (R0=21 μm, H0=2.3 μm) under idealized conditions. (a) and (d) OPD- and IPD-profile at the mask front-side during 15 kPa chucking stage; (b) and (e) maximum OPD and IPD at the mask front-side for various loading pressures; (c) and (f) indentation and in-plane motion of mask back-side and chuck front-side at 15 kPa. Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Effect of the gap-dependent pressure modeling on the mask OPD (at reticle level). Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Comparison of experimental data 4 (Exp) and least-squares fit to the ‘Plate-model’ with spherical particles (Hertz): Max OPD at the reticle level. Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Typical OPD and IPD contributions to the IPE at wafer level. Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Critical cylindrical particle sizes for different material combinations at 15 kPa loading pressure and 1 nm IPE budget (IPEcrit=1 nm). Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Critical cylindrical particle size bounds for various IPE budgets (IPEcrit) and loading pressures. Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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Date of download: 6/22/2016 Copyright © 2016 SPIE. All rights reserved. Critical spherical particle size bounds for various IPE budgets (IPEcrit) and loading pressures. Figure Legend: From: Particle contamination effects in extreme ultraviolet lithography: enhanced theory for the analytical determination of critical particle sizes J. Micro/Nanolith. MEMS MOEMS. 2012;11(2):023011-1-023011-8. doi:10.1117/1.JMM.11.2.023011
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