1. Radiation Tests Performed on GaNs

2. Working Group: INFN Roma1
DIEI – University of Cassino and Southern Lazio - Cassino ENEA - Centro Ricerche Casaccia Researchers: Carmine Abbate Stefania Baccaro Giovanni Busatto Salvatore Fiore Francesco Iannuzzo Annunziata Sanseverino Francesco Velardi Jeff Wyss Ph.D. Student: Davide Tedesco Laboratory Technician: Tomasino Iovini

3. GAMMA RAYS IRRADIATION

4. THE IRRADIATION FACILITY
CALLIOPE - γ-source at
ENEA Centro Ricerca Casaccia

5. GaN: Gamma Test Conditions
Part number EPC2015, 25 sampled tested.
Measurements were carried out on fresh and irradiated devices (pre-and post-annealing.
Samples
Day of exposure
Total Dose [Gy]
D35 - D39 19
D5, D16 - D19 9
5156.1
D30 - D34 3
1718.7
D20 - D24 2
1145.8
D25 - D29 1
572.9

6. GaN: Gamma Dose Effect

7. HEAVY IONS IRRADIATION

8. THE IRRADIATION FACILITIES
16MV TANDEM XTU
15MV TANDEM XTU
I.N.F.N. – L N L LEGNARO (PD)
I.N.F.N. – L N S CATANIA

9. Heavy Ions Experimental Set Up

10. Heavy Ions Experimental Procedure
SMU2
SMU1
Fast Sampling Oscilloscope

11. STATISTICAL ANALYSIS TIME DOMAIN WAVEFORMS SCATTER PLOT
NUMERICAL
INTEGRATION
DISTRIBUTION FUNCTION
-LIKE DISTRIBUTION FUNCTION PARAMETERS EXTRACTION
MEAN CHARGE vs BIAS VOLTAGE

12. HEAVY IONS IRRADIATION EPC2015

13. Irradiation after one week annealing
EPC2015
Irradiation after one week annealing

14. Irradiation after 570Gy gamma dose
EPC2015
Irradiation after 570Gy gamma dose

15. Irradiation after 1.72kGy gamma dose
EPC2015
Irradiation after 1.72kGy gamma dose

16. Irradiation after 5.15kGy gamma dose
EPC2015
Irradiation after 5.15kGy gamma dose

17. Irradiation after 10.9kGy gamma dose
EPC2015
Irradiation after 10.9kGy gamma dose

18. HEAVY IONS IRRADIATION EPC1007

19. Drain leakage current after irradiation
EPC1007
Drain leakage current after irradiation

20. Gate leakage current after irradiation
EPC1007
Gate leakage current after irradiation

21. Drain leakage current during irradiation
EPC1007
Drain leakage current during irradiation

22. Gate leakage current during irradiation
EPC1007
Gate leakage current during irradiation

23. Gate and drain leakage current during irradiation
EPC1007
Gate and drain leakage current during irradiation

24. EPC1007

25. EPC1007

26. EPC1007

27. EPC1007

28. HEAVY IONS IRRADIATION EPC2012

29. EPC2012

30. Conclusions
Low voltage GaN MOSFET are tolerant to high irradiation doses and Single Event Effects
100V and 200V devices are sensitive to Single Event Effects (Single Event Burn-out)
In GaN power MOSFETs, the charge generated during heavy ion impact is very sensitive to the location of the impact

31. Future Work Proton irradiation Neutron irradiation
Irradiation with different heavy ion species
2D and 3D FEM simulation for understanding the mechanisms of the charge generation and failure mechanisms
Identifying the volume sensitive to the Single Event Effects

32. THANK YOU
FOR YOUR ATTENTION