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Date of download: 6/24/2016 Copyright © 2016 SPIE. All rights reserved. Forward I−V characteristics measured for LED I, LED II, and LED III. Figure Legend: From: Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses J. Photon. Energy. 2015;5(1):057612. doi:10.1117/1.JPE.5.057612
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Date of download: 6/24/2016 Copyright © 2016 SPIE. All rights reserved. Forward I−V characteristics plotted in semilogarithmic scale. Figure Legend: From: Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses J. Photon. Energy. 2015;5(1):057612. doi:10.1117/1.JPE.5.057612
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Date of download: 6/24/2016 Copyright © 2016 SPIE. All rights reserved. Electroluminescence (EL) spectrum for LED I, LED II, and LED III at 20 mA. Figure Legend: From: Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses J. Photon. Energy. 2015;5(1):057612. doi:10.1117/1.JPE.5.057612
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Date of download: 6/24/2016 Copyright © 2016 SPIE. All rights reserved. External quantum efficiency and output power measured for LED I, LED II, and LED III. Figure Legend: From: Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses J. Photon. Energy. 2015;5(1):057612. doi:10.1117/1.JPE.5.057612
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Date of download: 6/24/2016 Copyright © 2016 SPIE. All rights reserved. The hot/cold factors as a function of injection currents for LED I, LED II, and LED III. Figure Legend: From: Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses J. Photon. Energy. 2015;5(1):057612. doi:10.1117/1.JPE.5.057612
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Date of download: 6/24/2016 Copyright © 2016 SPIE. All rights reserved. Electrostatic discharge of LED I, LED II, and LED III as a function of reverse-biased voltage. Figure Legend: From: Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses J. Photon. Energy. 2015;5(1):057612. doi:10.1117/1.JPE.5.057612
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Date of download: 6/24/2016 Copyright © 2016 SPIE. All rights reserved. Temperature dependence of EL intensity for LED I, LED II, and LED III. Figure Legend: From: Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses J. Photon. Energy. 2015;5(1):057612. doi:10.1117/1.JPE.5.057612
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