1. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. Transmission loss compensation by reducing absorber CD. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

2. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. Simulation concept of pattern fidelity check. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

3. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. Simulation conditions. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

4. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. Pellicle conditions and resist profiles of OPCed masks with Samsung and ASML pellicle. 6,7 Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

5. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. (a) Biased mask CD with different pellicle transmissions to make the same wafer CD for 16 and 22 nm 1 ∶ 1 line and space pattern, (b) image and resist CD change for a 1 ∶ 1 line and space patterns with (w/) or without (w/o) OPC for different transmission pellicles, and (c) resist profiles of the patterning w/ or w/o OPC. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

6. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. Patterning quality check of patterning results (16 nm 1 ∶ 1 L/S): (a) contrast, (b) NILS, and (c) sidewall angle are shown. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

7. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. (a) PW change with the OPCed masks for 16-nm line and space patterning and (b) specific values of DOF and EL. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

8. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. MEEF check for a 20-nm isolated pattern. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

9. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. (a) Aerial image differences between vertical and horizontal directions for a periodic contact hole pattern and (b) biased mask CD for 22-nm contact hole pattern, aerial image NILS, and sidewall angle change with different transmission pellicles. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

10. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. (a) An original mask layout and OPCed mask layouts with different transmission pellicles, (b) resist profiles of patterning results for the OPCed masks, and (c) overlapped images of the resist profiles. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506

11. Date of download: 6/25/2016 Copyright © 2016 SPIE. All rights reserved. Resist contour difference between at the top and bottom and sidewall angles. Figure Legend: From: Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle J. Micro/Nanolith. MEMS MOEMS. 2016;15(2):023506. doi:10.1117/1.JMM.15.2.023506