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1 Bipolar Junction Transistors (BJTs)
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Figure 5.1 A simplified structure of the npn transistor.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith3 Figure 5.2 A simplified structure of the pnp transistor.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith4
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith5 Figure 5.3 Current flow in an npn transistor biased to operate in the active mode. (Reverse current components due to drift of thermally generated minority carriers are not shown.)
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith6 Figure 5.4 Profiles of minority-carrier concentrations in the base and in the emitter of an npn transistor operating in the active mode: v BE 0 and v CB 0.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith7
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith8
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith9
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith10
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith11 Figure 5.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith12 Figure 5.6 Cross-section of an npn BJT.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith13 Figure 5.7 Model for the npn transistor when operated in the reverse active mode (i.e., with the CBJ forward biased and the EBJ reverse biased).
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith14 Figure 5.8 The Ebers-Moll (EM) model of the npn transistor.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith15
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith16
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith17
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith18 Figure 5.9 The i C – v CB characteristic of an npn transistor fed with a constant emitter current I E. The transistor enters the saturation mode of operation for v CB –0.4 V, and the collector current diminishes.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith19 Figure 5.10 Concentration profile of the minority carriers (electrons) in the base of an npn transistor operating in the saturation mode.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith20 Figure 5.11 Current flow in a pnp transistor biased to operate in the active mode.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith21 Figure 5.12 Large-signal model for the pnp transistor operating in the active mode.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith22 Figure 5.13 Circuit symbols for BJTs.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith23 Figure 5.14 Voltage polarities and current flow in transistors biased in the active mode.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith24
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith25 Figure 5.15 Circuit for Example 5.1. EXAMPLE 5.1
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith26
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith27 Figure E5.10
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith28 Figure E5.11
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith29 Figure 5.16 The i C – v BE characteristic for an npn transistor.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith30 Figure 5.17 Effect of temperature on the i C – v BE characteristic. At a constant emitter current (broken line), v BE changes by –2 mV/ C.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith31 Figure 5.18 The i C – v CB characteristics of an npn transistor.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith32 Figure 5.19 (a) Conceptual circuit for measuring the i C – v CE characteristics of the BJT. (b) The i C – v CE characteristics of a practical BJT.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith33
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith34 Figure 5.20 Large-signal equivalent-circuit models of an npn BJT operating in the active mode in the common-emitter configuration.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith35 Figure 5.21 Common-emitter characteristics. Note that the horizontal scale is expanded around the origin to show the saturation region in some detail.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith36 Figure 5.22 Typical dependence of on I C and on temperature in a modern integrated-circuit npn silicon transistor intended for operation around 1 mA.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith37 Figure 5.23 An expanded view of the common-emitter characteristics in the saturation region.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith38
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith39 Figure 5.24 (a) An npn transistor operated in saturation mode with a constant base current I B. (b) The i C – v CE characteristic curve corresponding to i B = I B. The curve can be approximated by a straight line of slope 1/R CEsat. (c) Equivalent-circuit representation of the saturated transistor. (d) A simplified equivalent-circuit model of the saturated transistor.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith40
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith41 Figure 5.25 Plot of the normalized i C versus v CE for an npn transistor with F = 100 and R = 0.1. This is a plot of Eq. (5.47), which is derived using the Ebers-Moll model.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith42
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith43 Figure E5.18 BV BCO =70 V
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith44
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith45
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith46
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith47
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith48
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith49 Figure 5.26 (a) Basic common-emitter amplifier circuit. (b) Transfer characteristic of the circuit in (a). The amplifier is biased at a point Q, and a small voltage signal v i is superimposed on the dc bias voltage V BE. The resulting output signal v o appears superimposed on the dc collector voltage V CE. The amplitude of v o is larger than that of v i by the voltage gain A v.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith50
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith51
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith52
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith53 EXAMPLE 5.2
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith54
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith55 Figure 5.27 Circuit whose operation is to be analyzed graphically.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith56 Figure 5.28 Graphical construction for the determination of the dc base current in the circuit of Fig. 5.27.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith57 Figure 5.29 Graphical construction for determining the dc collector current I C and the collector-to-emitter voltage V CE in the circuit of Fig. 5.27.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith58 Figure 5.30 Graphical determination of the signal components v be, i b, i c, and v ce when a signal component v i is superimposed on the dc voltage V BB (see Fig. 5.27).
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith59 Figure 5.31 Effect of bias-point location on allowable signal swing: Load-line A results in bias point Q A with a corresponding V CE which is too close to V CC and thus limits the positive swing of v CE. At the other extreme, load-line B results in an operating point too close to the saturation region, thus limiting the negative swing of v CE.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith60 Figure 5.32 A simple circuit used to illustrate the different modes of operation of the BJT.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith61
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith62
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith63 Figure 5.33 Circuit for Example 5.3. EXAMPLE 5.3
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith64
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith65 Figure 5.34 Analysis of the circuit for Example 5.4: (a) circuit; (b) circuit redrawn to remind the reader of the convention used in this book to show connections to the power supply; (c) analysis with the steps numbered.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith66 EXAMPLE 5.4
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith67 Figure 5.35 Analysis of the circuit for Example 5.5. Note that the circled numbers indicate the order of the analysis steps.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith68 EXAMPLE 5.5
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith69
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith70 Figure 5.36 Example 5.6: (a) circuit; (b) analysis with the order of the analysis steps indicated by circled numbers. EXAMPLE 5.6
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith71 Figure 5.37 Example 5.7: (a) circuit; (b) analysis with the steps indicated by circled numbers. EXAMPLE 5.7
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith73 Figure 5.38 Example 5.8: (a) circuit; (b) analysis with the steps indicated by the circled numbers. EXAMPLE 5.8
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith74
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith75 Figure 5.39 Example 5.9: (a) circuit; (b) analysis with steps numbered. EXAMPLE 5.9
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith78 Figure 5.40 Circuits for Example 5.10.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith79 EXAMPLE 5.10
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith80
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith81 Figure 5.41 Circuits for Example 5.11. EXAMPLE 5.11
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith84 Figure E5.30
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith85 Figure 5.42 Example 5.12: (a) circuit; (b) analysis with the steps numbered. EXAMPLE 5.12
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith86 Figure 5.43 Two obvious schemes for biasing the BJT: (a) by fixing V BE ; (b) by fixing I B. Both result in wide variations in I C and hence in V CE and therefore are considered to be “bad.” Neither scheme is recommended. 5.5 Constant Ic
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith87 Figure 5.44 Classical biasing for BJTs using a single power supply: (a) circuit; (b) circuit with the voltage divider supplying the base replaced with its Thévenin equivalent.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith88
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith89 EXAMPLE 5.13 I E =1mA, V CC =12V
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith90
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith91 Figure 5.45 Biasing the BJT using two power supplies. Resistor R B is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source, resulting in almost total -independence of the bias current.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith92 Figure 5.46 (a) A common-emitter transistor amplifier biased by a feedback resistor R B. (b) Analysis of the circuit in (a).
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith93
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith94 Figure 5.47 (a) A BJT biased using a constant-current source I. (b) Circuit for implementing the current source I.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith95 Figure 5.48 (a) Conceptual circuit to illustrate the operation of the transistor as an amplifier. (b) The circuit of (a) with the signal source v be eliminated for dc (bias) analysis.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith96
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith97
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith99 Figure 5.49 Linear operation of the transistor under the small-signal condition: A small signal v be with a triangular waveform is superimposed on the dc voltage V BE. It gives rise to a collector signal current i c, also of triangular waveform, superimposed on the dc current I C. Here, i c = g m v be, where g m is the slope of the i C – v BE curve at the bias point Q.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith104 Figure 5.50 The amplifier circuit of Fig. 5.48(a) with the dc sources (V BE and V CC ) eliminated (short circuited). Thus only the signal components are present. Note that this is a representation of the signal operation of the BJT and not an actual amplifier circuit.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith105 Figure 5.51 Two slightly different versions of the simplified hybrid- model for the small-signal operation of the BJT. The equivalent circuit in (a) represents the BJT as a voltage-controlled current source (a transconductance amplifier), and that in (b) represents the BJT as a current- controlled current source (a current amplifier).
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith106 Figure 5.52 Two slightly different versions of what is known as the T model of the BJT. The circuit in (a) is a voltage-controlled current source representation and that in (b) is a current-controlled current source representation. These models explicitly show the emitter resistance r e rather than the base resistance r featured in the hybrid- model.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith108 Figure 5.53 Example 5.14: (a) circuit; (b) dc analysis; (c) small-signal model. =100 Voltage gain?
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith109 EXAMPLE 5.14
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith110
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith111 EXAMPLE 5.15
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith112 Figure 5.54 Signal waveforms in the circuit of Fig. 5.53.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith113 Figure 5.55 Example 5.16: (a) circuit; (b) dc analysis; (c) small-signal model; (d) small-signal analysis performed directly on the circuit.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith114 EXAMPLE 5.16
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith115 Figure 5.56 Distortion in output signal due to transistor cutoff. Note that it is assumed that no distortion due to the transistor nonlinear characteristics is occurring.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith116 Figure 5.57 Input and output waveforms for the circuit of Fig. 5.55. Observe that this amplifier is noninverting, a property of the common-base configuration.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith117 Figure 5.58 The hybrid- small-signal model, in its two versions, with the resistance r o included.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith118 Figure E5.40
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith121 Figure 5.59 Basic structure of the circuit used to realize single-stage, discrete-circuit BJT amplifier configurations.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith122 Figure E5.41
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith124 Table 5.5
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith127 EXAMPLE 5.17
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith132 Figure 5.60 (a) A common-emitter amplifier using the structure of Fig. 5.59. (b) Equivalent circuit obtained by replacing the transistor with its hybrid- model.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith136 Figure 5.61 (a) A common-emitter amplifier with an emitter resistance R e. (b) Equivalent circuit obtained by replacing the transistor with its T model.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith141 Figure 5.62 (a) A common-base amplifier using the structure of Fig. 5.59. (b) Equivalent circuit obtained by replacing the transistor with its T model.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith143
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith144 Figure 5.63 (a) An emitter-follower circuit based on the structure of Fig. 5.59. (b) Small-signal equivalent circuit of the emitter follower with the transistor replaced by its T model augmented with r o. (c) The circuit in (b) redrawn to emphasize that r o is in parallel with R L. This simplifies the analysis considerably.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith145 Figure 5.64 (a) An equivalent circuit of the emitter follower obtained from the circuit in Fig. 5.63(c) by reflecting all resistances in the emitter to the base side. (b) The circuit in (a) after application of Thévenin theorem to the input circuit composed of v sig, R sig, and R B.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith146
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith147 Figure 5.65 (a) An alternate equivalent circuit of the emitter follower obtained by reflecting all base-circuit resistances to the emitter side. (b) The circuit in (a) after application of Thévenin theorem to the input circuit composed of v sig, R sig / ( 1 1), and R B / ( 1 1).
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith150 Figure 5.66 Thévenin equivalent circuit of the output of the emitter follower of Fig. 5.63(a). This circuit can be used to find v o and hence the overall voltage gain v o / v sig for any desired R L.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith158 Figure 5.67 The high-frequency hybrid- model.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith159 Figure 5.68 Circuit for deriving an expression for h fe (s) ; I c /I b.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith162 Figure 5.69 Bode plot for u h fe u.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith163 Figure 5.70 Variation of f T with I C.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith165 Figure 5.71 (a) Capacitively coupled common-emitter amplifier. (b) Sketch of the magnitude of the gain of the CE amplifier versus frequency. The graph delineates the three frequency bands relevant to frequency-response determination.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith167 Figure 5.72 Determining the high-frequency response of the CE amplifier: (a) equivalent circuit; (b) the circuit of (a) simplified at both the input side and the output side; (c) equivalent circuit with C replaced at the input side with the equivalent capacitance C eq ; (d) sketch of the frequency- response plot, which is that of a low-pass STC circuit.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith170 EXAMPLE 5.18 I=1 mA R B =100 kohm R sig = 5 kohm R L =5 kohm R C =3 kohm o =100 V A =100 C µ = 1 pF f T =800 MHz r x = 50 ohm
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith173 Figure 5.73 Analysis of the low-frequency response of the CE amplifier: (a) amplifier circuit with dc sources removed; (b) the effect of C C1 is determined with C E and C C2 assumed to be acting as perfect short circuits;
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith174 Figure 5.73 (Continued) (c) the effect of C E is determined with C C1 and C C2 assumed to be acting as perfect short circuits; (d) the effect of C C2 is determined with C C1 and C E assumed to be acting as perfect short circuits;
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith175 Figure 5.73 (Continued) (e) sketch of the low-frequency gain under the assumptions that C C1, C E, and C C2 do not interact and that their break (or pole) frequencies are widely separated.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith180 EXAMPLE 5.19
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith182 Figure 5.74 Basic BJT digital logic inverter.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith183 Figure 5.75 Sketch of the voltage transfer characteristic of the inverter circuit of Fig. 5.74 for the case R B 5 10 k , R C 5 1 k , 5 50, and V CC 5 5 V. For the calculation of the coordinates of X and Y, refer to the text.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith186 Figure 5.76 The minority-carrier charge stored in the base of a saturated transistor can be divided into two components: That in blue produces the gradient that gives rise to the diffusion current across the base, and that in gray results from driving the transistor deeper into saturation.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith187 Figure E5.53
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith188 Figure 5.77 The transport form of the Ebers-Moll model for an npn BJT.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith190 Figure 5.78 The SPICE large-signal Ebers-Moll model for an npn BJT.
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith192 EXAMPLE 5.20
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith193 Figure 5.79 The PSpice testbench used to demonstrate the dependence of dc on the collector bias current I C for the Q2N3904 discrete BJT (Example 5.20).
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith194 Figure 5.80 Dependence of dc on I C (at V CE 5 2 V) in the Q2N3904 discrete BJT (Example 5.20).
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith195 Figure 5.81 Capture schematic of the CE amplifier in Example 5.21. EXAMPLE 5.21
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Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith198 Figure 5.82 Frequency response of the CE amplifier in Example 5.21 with R ce = 0 and R ce = 130 .
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