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Solid-State Devices & Circuits

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Presentation on theme: "Solid-State Devices & Circuits"— Presentation transcript:

1 Solid-State Devices & Circuits
ECE 442 Solid-State Devices & Circuits 12. Frequency Response of CS Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois

2 MOSFET - Gate Capacitance Effect
Triode region: Saturation region: Cutoff:

3 MOSFET – Junction Capacitances
Overlap capacitance (gate-to-source):

4 MOSFET High-Frequency Model

5 CS - Three Frequency Bands

6 Unity-Gain Frequency fT
fT is defined as the frequency at which the short-circuit current gain of the common source configuration becomes unity Define: (neglect sCgdVgs since Cgd is small)

7 Calculating fT For s=jw, magnitude of current gain becomes unity at
fT ~ 100 MHz for 5-mm CMOS, fT ~ several GHz for 0.13mm CMOS

8 CS - High-Frequency Response

9 CS - High-Frequency Response

10 CS - High-Frequency Response

11 CS – Miller Effect Define Ceq such that

12 CS – Miller Effect fo is the corner frequency of the STC circuit

13 CS – Miller Effect

14 Example Rsig = 100 kW, RG=4.7 MW, RD =15 kW, gm=1mA/V, rds=150 kW, RL=10 kW, Cgs=1 pF and Cgd=0.4 pF

15 Example (cont’) Upper 3 dB frequency is at:

16 BJT Capacitances Base: Diffusion Capacitance: Cde (small signal)
where Qn is minority carrier charge in base where tF is the forward transit time (time spent crossing base)

17 BJT Capacitances Base-emitter junction capacitance:
Cjeo is Cje at 0 V. Voe is EBJ built in voltage ~ 0.9 V

18 BJT Capacitances In hybrid pi model, Cde+Cje=Cp
Collector-base junction capacitance Cmo is Cm at 0 V. Voc is CBJ built in voltage ~ 0.9 V Cp is around a few tens of pF Cm is around a few pF

19 High-Frequency Hybrid-p Model

20 CE - Three Frequency Bands

21 CS – Miller Effect – Exact Analysis

22 CS – Miller Effect – Exact Analysis

23 CS – Miller Effect – Exact Analysis
We neglect the terms in s2 since Miller If we multiply through by

24 CS – Miller Effect – Exact Analysis
From which we extract the 3-dB frequency point

25 CS – Miller Effect – Exact Analysis
If Gg is negligible If Ri =0

26 Example For the discrete common-source MOSFET amplifier shown, the transistor has VT = 1V, mCox(W/L) = 0.25 mA/V2, l = 0, Cgs = 3 pF, Cgd = 2.7 pF and VA = 20 V. Assume that the coupling capacitors are short circuits at midband and high frequencies. Find the 3dB bandwidth if Ri=0 (b) Find the 3dB bandwidth if Ri= 10 kW


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