1. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. INTRODUCTION TO Nano Green Technology, Inc. LIVERMORE, CALIFORNIA Critical Cleaning Systems

2. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. ABSTRACT NanoGreen Technology, Inc. is an engineering and marketing company that has patented a revolutionary cleaning technology that offers the following: A revolutionary new “paradigm shift” in the way devices are cleaned. A critical technological and financial advantage to anyone who implements this technology The ultimate solution for critical wafer-cleaning applications for 65nm and beyond--with no theoretical lower limit. NanoGreen Technology, Inc. is an engineering and marketing company that has patented a revolutionary cleaning technology that offers the following: A revolutionary new “paradigm shift” in the way devices are cleaned. A critical technological and financial advantage to anyone who implements this technology The ultimate solution for critical wafer-cleaning applications for 65nm and beyond--with no theoretical lower limit.

3. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. NanoGreen Technology has developed a new wafer-cleaning paradigm for the future of wafer wet processing. Uses a “charged solution” of NH 3 to form clusters, in D.I. Water, which attract particles at the molecular level--as particle “scavengers.” Establishes a benign ( 10 -6 concentrations or lower) in D.I. Water: a new approach to ultra dilute wafer cleaning, beyond 65 nm, with no theoretical lower limit. NanoGreen Technology has developed a new wafer-cleaning paradigm for the future of wafer wet processing. Uses a “charged solution” of NH 3 to form clusters, in D.I. Water, which attract particles at the molecular level--as particle “scavengers.” Establishes a benign ( 10 -6 concentrations or lower) in D.I. Water: a new approach to ultra dilute wafer cleaning, beyond 65 nm, with no theoretical lower limit. Overview: NanoGreen Technology

4. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. The “cluster” in the charged D.I. water does not require any surfactants or other fluids to remove particles. The clusters are natural molecular scavengers--like a molecular vacuum--attracting particles and holding them in the fluid, which can then be removed. Next Generation Cleaning

5. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. Problems and Solutions Problem Critical Cleaning Issues Damage to devices due to etching. Damage to devices due to megasonic energy. Nano particles. Metallic contamination. Problem Critical Cleaning Issues Damage to devices due to etching. Damage to devices due to megasonic energy. Nano particles. Metallic contamination. Solution NanoGreen Processing Because there is no reaction with native oxide, there is no loss of topography. Megasonic energy can be reduced dramatically by using the “charged solution.” The charged solution cleans surfaces at the molecular level. All particles are attracted to the clusters where they get captured, as per our photographs. Absolutely no addition of Metallic ions during NanoGreen’s process. Residual metallic ions are removed by the clusters.

6. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. Problems and Solutions Problem Critical Cleaning Issues Expensive chemicals. Chemical handling costs. Volatile Organic Compounds. High Waste treatment costs. High-equipment costs. Problem Critical Cleaning Issues Expensive chemicals. Chemical handling costs. Volatile Organic Compounds. High Waste treatment costs. High-equipment costs. Solution NanoGreen Processing Virtually no cost in chemicals. No special handling costs. No chemicals; no bulk-fill. No VOCs being generated. No waste treatment. Very inexpensive and easy to interface. Solution NanoGreen Processing Virtually no cost in chemicals. No special handling costs. No chemicals; no bulk-fill. No VOCs being generated. No waste treatment. Very inexpensive and easy to interface.

7. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. As the semiconductor industry develops processes for the 65 and 45nm nodes, wafer cleaning faces new challenges for both FEOL and BEOL requirements: fragile device structures and materials stringent requirements for cleanliness and material loss Current “etching” cleaning methodology causes pattern damage and excessive material loss. Not environment friendly. As the semiconductor industry develops processes for the 65 and 45nm nodes, wafer cleaning faces new challenges for both FEOL and BEOL requirements: fragile device structures and materials stringent requirements for cleanliness and material loss Current “etching” cleaning methodology causes pattern damage and excessive material loss. Not environment friendly. Problem: Cleaning Beyond 65nm

8. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. Most importantly, this new technology offers a complete “paradigm shift” in the way devices are cleaned. Addresses the major problem facing circuit manufacturers today--a cleaning technology that does not damage nanolevel structures. Most importantly, this new technology offers a complete “paradigm shift” in the way devices are cleaned. Addresses the major problem facing circuit manufacturers today--a cleaning technology that does not damage nanolevel structures. Benefits of NanoGreen Technology

9. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. SEM images of small polysilicon DRAM storage capacitors show the effects of Megasonics within a batch immersion tool using high-power densities. On the left, there is extensive device destruction. On the right, those cases where there is no damage. Problem: High-Density Megasonic Energy

10. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. You can apply this technology to all tool platforms--for all types of cleaning applications RCA Clean Post BOE Pre Sacrificial Oxide Pre Poly Gate Post Metal Gate Oxide Pre Metal Etch Poly Gate Pre Photoresist Post CMP Pre Diffusion Business Advantages - Market Applications

11. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. Review of Previous Research Published in Journal of Electro Chemical Society and European Semiconductor

12. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. Process Demonstration 1.Obtain first order baseline performance of the particle-removal process: Native Oxide Loss Surface Roughening Metallic Contamination 2.Follow these process conditions: 110 ppm NH 3 60°C 450 W Megasonic energy 1.Obtain first order baseline performance of the particle-removal process: Native Oxide Loss Surface Roughening Metallic Contamination 2.Follow these process conditions: 110 ppm NH 3 60°C 450 W Megasonic energy

13. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. The Ultra-Dilute to Near-Zero NH 4 OH + Megasonic Particle Removal Process

14. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. Native Oxide Loss (At Room Temperature) Six wafers were loaded into the system; one wafer was removed and measured after each run (cleaning cycle) at room temperature. ~1Å of native oxide was removed after six process runs at room temperature. Six wafers were loaded into the system; one wafer was removed and measured after each run (cleaning cycle) at room temperature. ~1Å of native oxide was removed after six process runs at room temperature. 0 0 2 2 4 4 6 6 8 8 10 12 14 -2 1 1 2 2 3 3 4 4 5 5 6 6 Pre Post Delta Number of Cleaning Cycles Thickness (angstroms)

15. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. Surface Roughening (60°C, 110 ppm NH3, 450W Meg) Prime virgin 200 mm wafers were used. RMS, Ra, and Rmax decreased after one cleaning cycle. Cleaning cycles would improve surface roughening. Prime virgin 200 mm wafers were used. RMS, Ra, and Rmax decreased after one cleaning cycle. Cleaning cycles would improve surface roughening. 0.2 0.4 0.6 0.8 1.0 0.4 0.6 0.8 1.0 Unprocessed Bare Silicon Water Clean Through 1 Cycle Before Clean RMS = 0.8Å Ra= 0.6Å Rma= 15.8Å Before Clean RMS = 0.8Å Ra= 0.6Å Rma= 15.8Å After Clean RMS = 0.6Å Ra= 0.5Å Rma= 7.3Å After Clean RMS = 0.6Å Ra= 0.5Å Rma= 7.3Å

16. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. K K Ca Ti Cr Mn Fe Ni Cu Zn (x10 10 atoms/cm 2 Pre Clean Post Clean Metallic Contamination (60°C, 110 ppm NH 3, 450W Meg) All metals were below detection limits before and after processing. Prime virgin wafers were measured by TXRF before and after one cleaning cycle. All metals were below detection limits before and after processing. Prime virgin wafers were measured by TXRF before and after one cleaning cycle. Cen. <9 <6 <3 <1.5 <1.3 <1.1 <0.9 <0.7 <1.1 Mid. <7 <4 <5 <1.1 <1.0 <0.8 <0.7 <0.6 <0.8 Bot. <7 <6 <4 <1.5 <1.3 <1.1 <0.9 <0.8 <1.0 Cen. <9 <6 <4 <1.5 <1.3 <1.1 <0.9 <0.8 Mid. <7 <5 <2 <1.2 <1.0 <0.9 <0.8 <0.7 <0.6 Bot. <7 <5 <1.5 <1.3 <1.1 <1.0 <0.9 <0.8

17. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved.. Conclusions of Research Work The new process has the following benefits: Is the next generation particle removal process, making the SC- 1/SC-2 obsolete. Utilizes megasonic energy to detach surface bound particles; ultra- dilute to near-zero ammonium hydroxide solution at room temperature, preventing particles from reattaching to the surface of the wafer. Adds no detectable and removes all metallic contamination. Does not roughen the surface; in fact it improves the Si surface Utilizes negligible amounts of NH 3 per wafer. Removes particles with no oxide etching at room temperature. The new process has the following benefits: Is the next generation particle removal process, making the SC- 1/SC-2 obsolete. Utilizes megasonic energy to detach surface bound particles; ultra- dilute to near-zero ammonium hydroxide solution at room temperature, preventing particles from reattaching to the surface of the wafer. Adds no detectable and removes all metallic contamination. Does not roughen the surface; in fact it improves the Si surface Utilizes negligible amounts of NH 3 per wafer. Removes particles with no oxide etching at room temperature.

18. An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal 2005. NanoGreen Technology. All rights reserved..