1. CODES: component degradation simulation tool ESA Project 22381/09/NL/PA

2. 08-04-2009CODES II Final Presentation2 Outline Aim of activity Basic mechanisms The Framework and Work principles SEU and SEL Monitors Further Work

3. 08-04-2009CODES II Final Presentation3 Aim Integrated framework for SEE rate prediction for devices under different radiation environments Enabling simulation of microdosimetry at component level Search for physical mechanisms  Subsequently use for in-space predictions.  Understand at which level ground based testing is space representative  Improve test methods

4. 08-04-2009CODES II Final Presentation4 Basic Mechanisms Metal :  e,h ~10 5 m 2 V -1 s -1 - negligible Oxide :  e ~ 10 -3 m 2 V -1 s -1  h ~ 10 -5 m 2 V -1 s -1 -Long-lived cumulative Semiconductor :  e ~ 10 -3 m 2 V -1 s -1  e,h ~ 10 1 m 2 V -1 s -1 -Transient : Charge collection in the circuit -Memory cell upset, latch-up, burn J i = q n i  i  + q D i grad(n i  driftdiffusion i=e,h Drift: t~0.5ns Diffusion:t>0.5ns  ~10 5 m 2 V -1 s -1  e  ~10 -3 m 2 V -1 s -1  h <10 -5 m 2 V -1 s -1  ~10 1 m 2 V -1 s -1 Ionization Displacement

5. 08-04-2009CODES II Final Presentation5 Geometrical effects Perturbation of several structures in a device by a unique ion Charge collected by parasitic structures Three Types : 1.Shunt effect: The ion crosses several depleted regions. E.g ion normally to n+pnn+ structrue 2.Grazing angle: (75-90º) may cross different sensitive areas 3.Multiple Bit Upset: limited funnelled charge collection by charge already stored in the diode ->charge diffused in several neighbour junctions Musseau, 1994

6. 08-04-2009CODES II Final Presentation6 SEE in complex devices Complex devices: very large no of individual transistors: principal and parasitic The effect of transients depends on: Duration of the pulse compared to device response time Noise margins of the electrical node Total charge of the transient Characterisation of Sensitivity Threshold (critical charge) & Sensitive volume Cross Section (sensitive area)

7. 08-04-2009CODES II Final Presentation7 Structure 2 approaches – Statistic – Microscopic Sensitive Volume-FIT Iterative process: 3 modules: Geometry Description, Efficiency Matrix, Analysis Module.  calculates the SV shape that gives a best agreement with exp data CODES: The framework Radiation Input GEANT 4 Analysis Validation Experimental data Other software

8. 08-04-2009CODES II Final Presentation8 SEE Monitors on PROBA II Aim Technology Demonstration Module (TDM) integrated into the PROBA-II satellite, was launched Nov 2009, into a 800 km polar orbit. This experiment in support of in-orbit performance of modern memories aims at providing SEU/SEL data as inputs to improved ground modeling, predictions and testing.

9. 08-04-2009CODES II Final Presentation9 From Bethe-Block to Space Main challenge for new trend technology Very different Sensitivities Particle momentum differences between ground based test data and space radiation

10. 08-04-2009CODES II Final Presentation10 Conclusions & Further Work Main topics Radiation damage is still a very shadowed road to explore Many of the engineering analysis approaches are nowadays requiring physical interpretation and improvement We develop detailed tools, studies and physics simulation in order to better understand and improve the analysis Importance of ground based testing with ion beams. Further work Proceed with the dEdx vs  analysis of ion beams experimental analysis Increase the experimental database with testing at different energies, High and low energies Analyse in-flight data and correlate with ground based predictions (testing and simulation)

11. 08-04-2009CODES II Final Presentation11 SV-FIT fundamentals Modular iterative tool Microdosimetry Monte-Carlo technique Device sensitive volume: charge deposited contributes entirely to prompt charge collection. Input parameters: – Ion cocktails description – Irradiation test data SEU threshold definition SV shape modulation N Ne Si Ar Kr