1. Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Schematic of RIE system: (a) capacitive coupled plasma (CCP) RIE, and (b) inductive coupled plasma (ICP) RIE. Figure Legend: From: Fabrication and evaluation of a grayscale mask for x-ray lithography using MEMS technology J. Micro/Nanolith. MEMS MOEMS. 2008;7(1):013009-013009-9. doi:10.1117/1.2894817

2. Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. SEM images of an Si microstructure formed with tapered trench etching: (a) when the pressure of a passivation gas was reduced, and (b) when the pressure of a passivation gas was optimized. Figure Legend: From: Fabrication and evaluation of a grayscale mask for x-ray lithography using MEMS technology J. Micro/Nanolith. MEMS MOEMS. 2008;7(1):013009-013009-9. doi:10.1117/1.2894817

3. Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Process flow of an x-ray grayscale mask fabricated using MEMS technologies. Figure Legend: From: Fabrication and evaluation of a grayscale mask for x-ray lithography using MEMS technology J. Micro/Nanolith. MEMS MOEMS. 2008;7(1):013009-013009-9. doi:10.1117/1.2894817

4. Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Photographs of an x-ray grayscale mask fabricated using MEMS technologies: (a) front side and (b) back side of the mask. Figure Legend: From: Fabrication and evaluation of a grayscale mask for x-ray lithography using MEMS technology J. Micro/Nanolith. MEMS MOEMS. 2008;7(1):013009-013009-9. doi:10.1117/1.2894817

5. Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Optical configuration of the beam line BL-4 in the TERAS SR facility. Figure Legend: From: Fabrication and evaluation of a grayscale mask for x-ray lithography using MEMS technology J. Micro/Nanolith. MEMS MOEMS. 2008;7(1):013009-013009-9. doi:10.1117/1.2894817

6. Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Calculated photon flux spectra of the output beam from the beam line BL-4. Figure Legend: From: Fabrication and evaluation of a grayscale mask for x-ray lithography using MEMS technology J. Micro/Nanolith. MEMS MOEMS. 2008;7(1):013009-013009-9. doi:10.1117/1.2894817

7. Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Relationship between dose energy (or total exposed energy) and process depth when a PMMA resist was exposed in the beam line BL-4. Figure Legend: From: Fabrication and evaluation of a grayscale mask for x-ray lithography using MEMS technology J. Micro/Nanolith. MEMS MOEMS. 2008;7(1):013009-013009-9. doi:10.1117/1.2894817

8. Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Calculated and measured relationships between thickness of Si absorbers and process depth when a PMMA resist was exposed in the beam line BL-4. Figure Legend: From: Fabrication and evaluation of a grayscale mask for x-ray lithography using MEMS technology J. Micro/Nanolith. MEMS MOEMS. 2008;7(1):013009-013009-9. doi:10.1117/1.2894817

9. Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. (a) Expanded SEM image of a cross-sectional Si absorber with a linewidth of 50μm in an x-ray grayscale mask fabricated by tapered trench etching at a pressure of 9.5Pa. (b) Expanded SEM image of a cross-sectional PMMA microstructure with a linewidth of 50μm after x-ray lithography using an x-ray grayscale mask at a dose energy of 150mA ⋅ h. The white line is a cross-sectional shape simulated by the calculation. (c) Expanded SEM image of a cross-sectional Si absorber with a linewidth of 20μm in an x-ray grayscale mask fabricated by tapered trench etching at a pressure of 9.5Pa. (d) Expanded SEM image of a cross-sectional PMMA microstructure with a linewidth of 20μm after x-ray lithography using an x-ray grayscale mask at a dose energy of 150mA ⋅ h. The black line is a cross-sectional shape simulated by the calculation. Figure Legend: From: Fabrication and evaluation of a grayscale mask for x-ray lithography using MEMS technology J. Micro/Nanolith. MEMS MOEMS. 2008;7(1):013009-013009-9. doi:10.1117/1.2894817