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001-91510Owner: TUP Rev *B Tech lead: EWOO 1 4Kb-128Kb Serial F-RAM Family New Product Introduction New Product Introduction: 4Kb-128Kb Serial F-RAM™ Family Cypress Introduces the Industry’s Fastest, Most Energy-Efficient, Low-Density Nonvolatile RAM Products Title
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2 001-91510Owner: TUP Rev *BTech lead: EWOO 2 The Global TAM 1 forecast for Nonvolatile Random Access Memory (NVRAM) is $1.1B in 2014 2 with a 8% CAGR through 2019 Cypress F-RAM serves many high-growth NVRAM markets, including: Smart Meters Automotive Electronics Industrial Controls Multifunction Printers Wearable Electronics The mission-critical systems used in these high-growth markets require high-speed, high-endurance and high-reliability data capture on power loss Customers prefer simple, energy-efficient system designs Alternative Nonvolatile Memory solutions such as EEPROM cannot meet these requirements Mission-critical systems require NVRAMs with best-in-class write speed, endurance, reliability and energy efficiency 1 Total Available Market 2 Web-Feet Research, Semicast and Gartner F-RAM Is the Ideal Solution for the Large and Rapidly Growing NVRAM Market Serial F-RAM 4Kb-128Kb Serial F-RAM Family New Product Introduction Market Vision
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3 001-91510Owner: TUP Rev *BTech lead: EWOO Cypress Is the NVRAM Market Leader Cypress offers the largest portfolio of serial and parallel Nonvolatile Random Access Memory products F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers a broad portfolio of the industry’s most energy-efficient and reliable F-RAM products F-RAM consumes 200x less write energy than the most advanced EEPROM and offers 100 million times the Write Endurance 1 Densities range from 4Kb to 4Mb, and voltages range from 2.0 V to 5.5 V SPI and I 2 C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages Real-time clocks and counters are also available on F-RAM products Cypress offers a wide range of the industry’s fastest parallel nvSRAM products Access times range from 20 ns to 45 ns with unlimited read/write cycle endurance Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltages Asynchronous x8, x16, x32 SRAM parallel interfaces come in a wide variety of package options Integrated real-time clocks are also available on nvSRAM products Cypress: Was first to produce F-RAM and nvSRAM products and has more than 25 years of experience Continues to invest heavily in new products Is committed to providing products that meet the most rigorous automotive and military standards Assures long-term supply of F-RAM and nvSRAM products Has shipped more than 1 billion NVRAM units Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data 1 The number of times an NVM cell can be re-written before it wears out Market Positioning 4Kb-128Kb Serial F-RAM Family New Product Introduction
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4 001-91510Owner: TUP Rev *BTech lead: EWOO Serial Nonvolatile Memory Terms Nonvolatile Memory (NVM) Memory that retains its information on power loss Nonvolatile Random Access Memory (NVRAM) NVM that allows direct access to stored data in any random order Ferroelectric Random Access Memory (F-RAM) A fast-write, high-endurance, low-energy NVM that uses ferroelectric technology to store data Electrically Erasable Programmable Read-Only Memory (EEPROM) A common NVM that uses floating-gate technology to store data Page Write A write to a fixed-length contiguous block of memory Soak Time The approximate 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers Write Endurance The number of times an NVM cell can be rewritten before it wears out Wear Leveling A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached AEC-Q100 A quality standard defined by the Automotive Electronics Council used to verify the reliability of ICs and qualify them for automotive applications Terms of Art 4Kb-128Kb Serial F-RAM Family New Product Introduction
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5 001-91510Owner: TUP Rev *BTech lead: EWOO Serial NVM Design Problems 1. Many electronic devices must reliably store system data in NVM on power loss EEPROMs require a 5-ms continuation of active power per Page Write for Soak Time Soak Time requires additional capacitors or batteries for a Page Write on power loss, increasing cost and reducing reliability Mission-critical data can be lost when memory is corrupted by exposure to radiation or magnetic fields 2. Many data-logging applications exceed the 1-million write-cycle limitation of EEPROM Wear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan Wear Leveling requires up to 8x the memory capacity and additional software, increasing engineering effort and cost 3. Systems using EEPROM consume excess power For the 5 ms required for EEPROM Soak Time per Page Write For the processing required to do Wear Leveling Cypress 4Kb-128Kb serial F-RAMs solve these problems Eliminate Soak Time and the need for additional capacitors or batteries to complete a Page Write on power loss Provide 100 trillion write cycles, eliminating the need for Wear Leveling Consume 200x less write energy than EEPROM Protect data with radiation-tolerant and magnetic field-tolerant F-RAM memory cells The Cypress 4Kb-128Kb serial F-RAMs offer 100 million times the endurance of EEPROM and consume 200x less write energy Design Problems 4Kb-128Kb Serial F-RAM Family New Product Introduction
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6 001-91510Owner: TUP Rev *BTech lead: EWOO 6 Serial F-RAM Is a Better Solution Additional capacitor to maintain power for 5 ms per Page Write for Soak Time Simplify a conventional, complex, EEPROM-based design… F-RAM pin-for-pin replacement for EEPROM SOIC8 By choosing F-RAM as your serial Nonvolatile Memory solution… To produce better solutions for multiple mission-critical applications at a lower cost. Smart Meters Automotive Electronics Industrial Controls Multifunction Printers Wearable Electronics File System Memory Controller Worn Cell 8x EEPROM capacity for Wear Leveling Wear Leveling software algorithm to increase EEPROM Write Endurance 2 x 256Kb for a 64Kb System Cypress Solution 4Kb-128Kb Serial F-RAM Family New Product Introduction
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7 001-91510Owner: TUP Rev *BTech lead: EWOO Feature F-RAM CY15x064x F-RAM MB85Rx64 EEPROM AT2x64x SPI Speed 50 MHz20 MHz I 2 C Speed 3.4 MHz1 MHz Soak Time 0 ms 5 ms Endurance (Cycles) 10 14 10 12 10 6 Lifetime @5-ms Write Frequency 1 15,855 years159 years21 minutes SPI Active Write Current 2 2 mA2.4 mA10 mA I 2 C Active Write Current 3 0.2 mA0.4 mA3 mA Standby Current 1 µA5 µA0.3 µA 4 Nonvolatile Retention 100 years10 years100 years Automotive AEC-Q100 YesNoYes Cypress 64Kb Serial NVRAM vs. Competition’s 1 Comparable write frequency limited by EEPROM’s 5 ms for Soak Time 2 Conditions: Max current, 20 MHz, 2.7 to 3.6 V, -40°C to +85°C 3 Conditions: Max current, 1 MHz, 2.7 to 3.6 V, -40°C to +85°C 4 2 or more EEPROMs are required to replace an F-RAM solution; therefore, the effective standby current will be higher. For example, 4 EEPROMs will result in 1.2-µA standby current Competitive Comparison 4Kb-128Kb Serial F-RAM Family New Product Introduction
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8 001-91510Owner: TUP Rev *BTech lead: EWOO Competitor EEPROM: (2x) Atmel AT25256B-SSHL-T 256Kb Price: $1.81 1 BOM Integration 5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.39 2 Additional Value Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 500,000 units Value Added: $0.10 $1.81 $0.39 $0.10 $2.30 Competitor Capacitor for 5-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 30% Total Savings: CY15B064Q-SXI $1.60 3 $0.70 1 Mouser website 1ku pricing on 10/31/2014 2 Digikey website 1ku pricing on 10/31/2014 3 Estimated web pricing on www.cypress.com Pricing 64Kb F-RAM Solution Value 4Kb-128Kb Serial F-RAM Family New Product Introduction
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9 001-91510Owner: TUP Rev *BTech lead: EWOO 128Kb/64Kb/16Kb/4Kb SPI Serial F-RAM Applications Features Preliminary Datasheet: Contact SalesContact Sales Collateral Block Diagram Sampling: Q1 2016 Production:Q2 2016 Availability F-RAM Array Data I/O Register Status Register Address Register Instruction Register Control Logic Serial Input Up to 50-MHz Serial Peripheral Interface (SPI) One-hundred-trillion read/write cycle endurance Direct hardware replacement for serial EEPROM Operating voltage ranges: 1.71-1.9 V, 1.8-5.5 V One-hundred-year data retention Industrial temperature operation: -40°C to +85°C Automotive A temperature operation: -40°C to +85°C Automotive E temperature operation: -40°C to +125°C Packages: 8-pin TDFN, 8-pin SOIC, 8-ball CSP 128Kb/64Kb/16Kb/4Kb SPI Serial F-RAM Control Serial Output 4 Smart Meters Automotive Electronics Industrial Controls Multifunction Printers Wearable Electronics Product Overview 4Kb-128Kb Serial F-RAM Family New Product Introduction
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10 001-91510Owner: TUP Rev *BTech lead: EWOO Here’s How to Get Started 1. Download the SPI Guide for F-RAMSPI Guide for F-RAM 2. Register to access online technical support: www.cypress.comwww.cypress.com 3. Request a preliminary datasheet: Contact SalesContact Sales Infotainment System by Hyundai Smart E-Meter by Landis + Gyr Motor Control by SEW Multifunction Printer by Ricoh Automotive Safety System by Hyundai Digital Hearing Aids by Oticon Getting Started 4Kb-128Kb Serial F-RAM Family New Product Introduction
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11 001-91510Owner: TUP Rev *BTech lead: EWOO References and Links Cypress Nonvolatile Products website: www.cypress.com/nonvolatilewww.cypress.com/nonvolatile The source for all of our publicly available nonvolatile product documentation and collateral Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM RoadmapCypress Nonvolatile RAM Roadmap For datasheets and NDA roadmap requests, contact your Cypress Sales Representative or email cypressfram@cypress.comCypress Sales Representativecypressfram@cypress.com App Notes: Nonvolatile Products Application NotesNonvolatile Products Application Notes Knowledge Base: Nonvolatile Products Knowledge Base ArticlesNonvolatile Products Knowledge Base Articles Print This Presentation: 4Kb-128Kb Serial F-RAM Family New Product Introduction4Kb-128Kb Serial F-RAM Family New Product Introduction References and Links 4Kb-128Kb Serial F-RAM Family New Product Introduction
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12 001-91510Owner: TUP Rev *BTech lead: EWOO APPENDIX Appendix 4Kb-128Kb Serial F-RAM Family New Product Introduction
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13 001-91510Owner: TUP Rev *BTech lead: EWOO SPI F-RAMI 2 C F-RAM Processor Companion Wireless Memory Parallel F-RAM F-RAM Portfolio Low Power | High Endurance FM28V020 256Kb; 2.0-3.6 V 70 ns; x8; Ind 2 FM1808B 256Kb; 5.0 V 70 ns; x8; Ind 2 Wireless Memory NDA Required Contact Sales FM25040/L04 4Kb; 3.3, 5.0 V 20 MHz SPI; Ind 2, Auto E 1 FM25C160/L16 16Kb; 3.3, 5.0 V 20 MHz SPI; Ind 2, Auto E 1 FM25640/CL64 64Kb; 3.3, 5.0 V 20 MHz SPI; Ind 2, Auto E 1 FM25V02/W256 256Kb; 2.0-3.6 V 40 MHz SPI; Ind 2, Auto A 3 FM25V05 512Kb; 2.0-3.6 V 40 MHz SPI; Ind 2, Auto A 3 FM25V10/VN10 1Mb; 2.0-3.6 V 40 MHz SPI; Ind 2, Auto A 3 FM25V20A 2Mb; 2.0-3.6 V 40 MHz SPI; Ind 2 FM25V01 128Kb; 2.0-3.6 V 40 MHz SPI; Ind 2, Auto A 3 FM24C04/CL04 4Kb; 3.3, 5.0 V 1 MHz I 2 C; Ind 2 FM24C16/CL16 16Kb; 3.3, 5.0 V 1 MHz I 2 C; Ind 2 FM24C64/CL64 64Kb; 3.3, 5.0 V 1 MHz I 2 C; Ind 2, Auto E 1 FM24V02/W256 256Kb; 2.0-3.6 V 3.4 MHz I 2 C; Ind 2, Auto A 3 FM24V05 512Kb; 2.0-3.6 V 3.4 MHz I 2 C; Ind 2 FM24V10/VN10 1Mb; 2.0-3.6 V 3.4 MHz I 2 C; Ind 2 FM24V01 128Kb; 2.0-3.6 V 3.4 MHz I 2 C; Ind 2, Auto A 3 FM3164/31(L)276 64Kb; 3.3, 5.0 V; 1 MHz I 2 C; Ind 2 ; RTC 4 ; Power Fail; Watchdog; Counter FM31256/31(L)278 256Kb; 3.3, 5.0V; 1 MHz I 2 C; Ind 2 ; RTC 4 ; Power Fail; Watchdog; Counter FM33256 256Kb; 3.3V; 16 MHz SPI Ind 2 ; RTC 4 ; Power Fail Watchdog; Counter 4Kb-256Kb 512Kb-8Mb FM28V202A 2Mb; 2.0-3.6 V 60 ns; x16; Ind 2 FM28V102A 1Mb; 2.0-3.6 V 60 ns; x16; Ind 2 CY15B104Q 4Mb; 2.0-3.6 V 40 MHz SPI; Ind 2 FM16W08 64Kb; 2.7-5.50 V 70 ns; x8; Ind 2 FM18W08 256Kb; 2.7-5.50 V 70 ns; x8; Ind 2 FM25H20/V20 2Mb; 2.0-3.6 V 40 MHz SPI; Ind 2 CY15V004J/B004J 4Kb; 1.71-1.9 V 3.4 MHz I 2 C; Ind 2, Auto E 1 CY15V016J/B016J 16Kb; 1.71-1.9 V 3.4 MHz I 2 C; Ind 2, Auto E 1 CY15V064J/B064J 64Kb; 1.71-1.9 V 3.4 MHz I 2 C; Ind 2, Auto E 1 CY15V004Q/B004Q 4Kb; 1.71-1.9 V 50 MHz SPI; Ind 2, Auto E 1 CY15V016Q/B016Q 16Kb; 1.71-1.9 V 50 MHz SPI; Ind 2, Auto E 1 CY15V064Q/B064Q 64Kb; 1.71-1.9 V 50 MHz SPI; Ind 2, Auto E 1 CY15V128Q/B128Q 128Kb; 1.71-1.9 V 50 MHz SPI; Ind 2, Auto A 3 CY15V128J/B128J 128Kb; 1.71-1.9 V 3.4 MHz I 2 C; Ind 2, Auto A 3 ProductionDevelopment QQYY Availability Sampling Concept Status FM22L16/LD16 4Mb; 2.7-3.6 V 55 ns; x8; Ind 2 1 AEC-Q100 −40ºC to +125ºC 2 Industrial grade −40ºC to +85ºC 3 AEC-Q100 −40ºC to +85ºC 4 Real-time clock NEW CY15B102Q 2Mb; 2.0-3.6 V 25 MHz SPI; Auto E 1 NEW Roadmap 4Kb-128Kb Serial F-RAM Family New Product Introduction
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14 001-91510Owner: TUP Rev *BTech lead: EWOO Feature F-RAM CY15x128x F-RAM CY15x064x F-RAM CY15x016x F-RAM CY15x004x Density 128Kb64Kb16Kb4Kb SPI Speed 50 MHz I 2 C Speed 3.4 MHz Soak Time 0 ms Endurance (Cycles) 10 14 Lifetime @5-ms Write Frequency 1 15,855 years SPI Active Write Current 2 2 mA I 2 C Active Write Current 3 0.2 mA Standby Current 1 µA Nonvolatile Retention 100 years Automotive AEC-Q100 Yes Product Family Overview 1 Comparable write frequency limited by EEPROM’s 5 ms for Soak Time 2 Conditions: Max current, 20 MHz, 2.7 to 3.6 V, -40°C to +85°C 3 Conditions: Max current, 1 MHz, 2.7 to 3.6 V, -40°C to +85°C Product Overview 4Kb-128Kb Serial F-RAM Family New Product Introduction
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15 001-91510Owner: TUP Rev *BTech lead: EWOO Sampling: Q1 2016 Production:Q2 2016 128Kb/64Kb/16Kb/4Kb I 2 C Serial F-RAM Applications Features Preliminary Datasheet: Contact SalesContact Sales Collateral Block Diagram Availability F-RAM Array Data Latch Device ID and Serial Number Address Latch Serial to Parallel Converter Control Logic Serial Data/Address 128Kb/64Kb/16Kb/4Kb I 2 C Serial F-RAM Control 5 Counter Up to 3.4-MHz I 2 C One-hundred-trillion read/write cycle endurance Direct hardware replacement for serial EEPROM Operating voltage ranges: 1.71-1.9 V, 1.8-5.5 V One-hundred-year data retention Industrial temperature operation: -40°C to +85°C Automotive A temperature operation: -40°C to +85°C Automotive E temperature operation: -40°C to +125°C Package: 8-pin SOIC, 8-ball CSP Smart Meters Automotive Electronics Industrial Controls Multifunction Printers Wearable Electronics Product Overview 4Kb-128Kb Serial F-RAM Family New Product Introduction
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16 001-91510Owner: TUP Rev *BTech lead: EWOO 128Kb/64Kb/16Kb/4Kb I 2 C F-RAM Product Selector Guide I 2 C F-RAM Part NumberDensityInterfaceFrequencyMin. Supply VoltageMax. Supply VoltageTempPackage CY15V128J-SXI128KbI2CI2C3.4 MHz1.71 V1.90 V-40-85°C8-SOIC CY15B128J-SXI128KbI2CI2C3.4 MHz1.80 V5.50 V-40-85°C8-SOIC CY15V128J-FDXI128KbI2CI2C3.4 MHz1.71 V1.90 V-40-85°C8-CSP CY15B128J-FDXI128KbI2CI2C3.4 MHz1.80 V5.50 V-40-85°C8-CSP CY15V064J-SXI64KbI2CI2C3.4 MHz1.71 V1.90 V-40-85°C8-SOIC CY15B064J-SXI64KbI2CI2C3.4 MHz2.7 V5.50 V-40-85°C8-SOIC CY15V064J-FDXI64KbI2CI2C3.4 MHz1.71 V1.90 V-40-85°C8-CSP CY15B064J-FDXI64KbI2CI2C3.4 MHz1.80 V5.50 V-40-85°C8-CSP CY15V016J-SXI16KbI2CI2C3.4 MHz1.71 V1.90 V-40-85°C8-SOIC CY15B016J-SXI16KbI2CI2C3.4 MHz1.80 V5.50 V-40-85°C8-SOIC CY15V016J-FDXI16KbI2CI2C3.4 MHz1.71 V1.90 V-40-85°C8-CSP CY15B016J-FDXI16KbI2CI2C3.4 MHz1.80 V5.50 V-40-85°C8-CSP CY15V004J-SXI4KbI2CI2C3.4 MHz1.80 V5.50 V-40-85°C8-SOIC CY15B004J-SXI4KbI2CI2C3.4 MHz2.7 V5.50 V-40-85°C8-SOIC CY15V004J-FDXI4KbI2CI2C3.4 MHz1.71 V1.90 V-40-85°C8-CSP CY15B004J-FDXI4KbI2CI2C3.4 MHz1.80 V5.50 V-40-85°C8-CSP I 2 C F-RAM Part Numbering Decoder CY 15 X XXX J – XX X I Temperature Range: I = Industrial Package: S = 8-SOIC, FD = 8-CSP Interface: J = I 2 C Density: 004 = 4Kb, 016 = 16Kb, 064 = 64Kb, 128 = 128Kb Marketing Code: 15 = F-RAM Company ID: CY = Cypress Voltage: V = 1.71 to 1.90 V, B = 1.80 to 5.50 V Pb Content: X = Pb-free Product Selector Guide 4Kb-128Kb Serial F-RAM Family New Product Introduction
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17 001-91510Owner: TUP Rev *BTech lead: EWOO SPI F-RAM Part NumberDensityInterfaceFrequencyMin. Supply VoltageMax. Supply VoltageTempPackage CY15V128Q-SXI128KbSPI25 MHz1.71 V1.90 V-40-85°C8-SOIC CY15B128Q-SXI128KbSPI50 MHz1.80 V5.50 V-40-85°C8-SOIC CY15V128Q-FDXI128KbSPI25 MHz1.71 V1.90 V-40-85°C8-CSP CY15B128Q-FDXI128KbSPI50 MHz1.80 V5.50 V-40-85°C8-CSP CY15V064Q-SXI64KbSPI25 MHz1.71 V1.90 V-40-85°C8-SOIC CY15B064Q-SXI64KbSPI50 MHz1.80 V5.50 V-40-85°C8-SOIC CY15B064Q-LHXI64KbSPI50 MHz1.80 V5.50 V-40-85°C8-TDFN CY15V064Q-FDXI64KbSPI25 MHz1.71 V1.90 V-40-85°C8-CSP CY15B064Q-FDXI64KbSPI50 MHz1.80 V5.50 V-40-85°C8-CSP CY15V016Q-SXI16KbSPI25 MHz1.71 V1.90 V-40-85°C8-SOIC CY15B016Q-SXI16KbSPI50 MHz1.80 V5.50 V-40-85°C8-SOIC CY15B016Q-LHXI16KbSPI50 MHz1.80 V5.50 V-40-85°C8-TDFN CY15V016Q-FDXI16KbSPI25 MHz1.71 V1.90 V-40-85°C8-CSP CY15B016Q-FDXI16KbSPI50 MHz1.80 V5.50 V-40-85°C8-CSP CY15V004Q-SXI4KbSPI25 MHz1.80 V5.50 V-40-85°C8-SOIC CY15B004Q-SXI4KbSPI50 MHz1.80 V5.50 V-40-85°C8-SOIC CY15B004Q-LHXI4KbSPI50 MHz1.80 V5.50 V-40-85°C8-TDFN CY15V004Q-FDXI4KbSPI25 MHz1.71 V1.90 V-40-85°C8-CSP CY15B004Q-FDXI4KbSPI50 MHz1.80 V5.50 V-40-85°C8-CSP 128Kb/64Kb/16Kb/4Kb SPI F-RAM Product Selector Guide SPI F-RAM Part Numbering Decoder CY 15 X XXX Q – XX X I Temperature Range: I = Industrial Package: S = 8-SOIC, LH = 8-DFN, FD = 8-CSP Interface: Q = SPI Density: 004 = 4Kb, 016 = 16Kb, 064 = 64Kb, 128 = 128Kb Marketing Code: 15 = F-RAM Company ID: CY = Cypress Voltage: V = 1.71 to 1.90 V, B = 1.80 to 5.50 V Pb Content: X = Pb-free Product Selector Guide 4Kb-128Kb Serial F-RAM Family New Product Introduction
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18 001-91510Owner: TUP Rev *BTech lead: EWOO Automotive F-RAM Part NumberDensityInterfaceFrequency Min. Supply Voltage Max. Supply VoltageTempPackage CY15B128Q-SXA128KbSPI40 MHz1.80 V5.50 V-40 to 85°C8-SOIC CY15B064Q-SXE64KbSPI20 MHz1.80 V5.50 V-40 to 125°C8-SOIC CY15B016Q-SXE16KbSPI20 MHz1.80 V5.50 V-40 to 125°C8-SOIC CY15B004Q-SXE4KbSPI20 MHz1.80 V5.50 V-40 to 125°C8-SOIC CY15B128J-SXA128KbI2CI2C3.4 MHz1.80 V5.50 V-40 to 85°C8-SOIC CY15B064J-SXE64KbI2CI2C 1 MHz1.80 V5.50 V-40 to 125°C8-SOIC CY15B016J-SXE16KbI2CI2C 1 MHz1.80 V5.50 V-40 to 125°C8-SOIC CY15B004J-SXE4KbI2CI2C 1 MHz1.80 V5.50 V-40 to 125°C8-SOIC Automotive F-RAM Product Selector Guide CY 15 B XXX X – S X X Automotive Serial F-RAM Part Numbering Decoder Temperature Range: A = Automotive-A, E = Automotive-E Package: S = 8-SOIC Interface: Q = SPI, J = I 2 C Density: 004 = 4Kb, 016 = 16Kb, 064 = 64Kb, 128 = 128Kb Marketing Code: 15 = F-RAM Company ID: CY = Cypress Voltage: B = 1.80 to 5.50 V Pb Content: X = Pb-free Product Selector Guide 4Kb-128Kb Serial F-RAM Family New Product Introduction
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19 001-91510Owner: TUP Rev *BTech lead: EWOO Feature F-RAM CY15x128x F-RAM MB85Rx128 EEPROM AT2x128x SPI Speed 50 MHz33 MHz20 MHz I 2 C Speed 3.4 MHz1 MHz Soak Time 0 ms 5 ms Endurance (Cycles) 10 14 10 12 10 6 Lifetime @5-ms Write Frequency 1 15,855 years159 years21 minutes SPI Active Write Current 2 2 mA5 mA10 mA I 2 C Active Write Current 3 0.2 mA0.4 mA3 mA Standby Current 1 µA9 µA0.5 µA 4 Nonvolatile Retention 100 years10 years100 years Automotive AEC-Q100 YesNoYes Cypress 128Kb Serial NVRAM vs. Competition’s 1 Comparable write frequency limited by EEPROM’s 5 ms for Soak Time 2 Conditions: Max current, 20 MHz, 2.7 to 3.6 V, -40°C to +85°C 3 Conditions: Max current, 1 MHz, 2.7 to 3.6 V, -40°C to +85°C 4 Two or more EEPROMs are required to replace an F-RAM solution, hence effective standby current will be higher. For example, 4 EEPROMs will result in 2-µA standby current Competitive Comparison 4Kb-128Kb Serial F-RAM Family New Product Introduction
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20 001-91510Owner: TUP Rev *BTech lead: EWOO Feature F-RAM CY15x016x CY15x004x F-RAM MB85Rx16 MB85Rx04 EEPROM AT2x16 AT2x04 SPI Speed 50 MHz20 MHz I 2 C Speed 3.4 MHz1 MHz Soak Time 0 ms 5 ms Endurance (Cycles) 10 14 10 12 10 6 Lifetime @5-ms Write Frequency 1 15,855 years159 years21 minutes SPI Active Write Current 2 2 mA2.4 mA10 mA I 2 C Active Write Current 3 0.2 mA0.1 mA3 mA Standby Current 1 µA5 µA0.2 µA 4 Nonvolatile Retention 100 years10 years100 years Automotive AEC-Q100 YesNoYes Cypress 16Kb/4Kb Serial NVRAM vs. Competition’s 1 Comparable write frequency limited by EEPROM’s 5 ms for Soak Time 2 Conditions: Max current, 20 MHz, 2.7 to 3.6 V, -40°C to +85°C 3 Conditions: Max current, 1 MHz, 2.7 to 3.6 V, -40°C to +85°C 4 2 or more EEPROMs are required to replace an F-RAM solution; therefore, the effective standby current will be higher. For example, 4 EEPROMs will result in 0.8-µA standby current Competitive Comparison 4Kb-128Kb Serial F-RAM Family New Product Introduction
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21 001-91510Owner: TUP Rev *BTech lead: EWOO Competitor EEPROM: (2x) Atmel AT25512N 512Kb Price: $2.82 1 BOM Integration 5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.39 1 Additional Value Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 500,000 units Value Added: $0.10 $2.82 $0.39 $0.10 $3.31 Competitor BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 17% Total Savings: CY15B128Q-SXI $2.75 2 $0.56 1 Digikey website 1ku pricing on 10/31/2014 2 Estimated web pricing on www.cypress.com Capacitor for 5-ms Soak Time Page Writes Pricing 128Kb F-RAM Solution Value 4Kb-128Kb Serial F-RAM Family New Product Introduction
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22 001-91510Owner: TUP Rev *BTech lead: EWOO Competitor EEPROM: (2x) Atmel AT25640B-SSHL-T 64Kb Price: $1.00 1 BOM Integration 5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.39 2 Additional Value Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 500,000 units Value Added: $0.10 $1.00 $0.39 $0.10 $1.49 Competitor Capacitor for 5-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 40% Total Savings: CY15B016Q-SXI $0.90 3 $0.59 1 Mouser website 1ku pricing on 10/31/2014 2 Digikey website 1ku pricing on 10/31/2014 3 Estimated web pricing on www.cypress.com Pricing 16Kb F-RAM Solution Value 4Kb-128Kb Serial F-RAM Family New Product Introduction
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23 001-91510Owner: TUP Rev *BTech lead: EWOO Competitor EEPROM: (2x) Atmel AT25160B-SSHL-T 16Kb Price: $0.70 1 BOM Integration 5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.39 2 Additional Value Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 500,000 units Value Added: $0.10 $0.70 $0.39 $0.10 $1.19 Competitor Capacitor for 5-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 34% Total Savings: CY15B004Q-SXI $0.79 3 $0.40 1 Mouser website 1ku pricing on 10/31/2014 2 Digikey website 1ku pricing on 10/31/2014 3 Estimated web pricing on www.cypress.com Pricing 4Kb F-RAM Solution Value 4Kb-128Kb Serial F-RAM Family New Product Introduction
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