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Characterization of M-π-n CdTe Pixel Detectors Coupled to Hexitec Readout Chip 13 th International Workshop on Radiation Imaging Detectors iWoRID 2011.

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Presentation on theme: "Characterization of M-π-n CdTe Pixel Detectors Coupled to Hexitec Readout Chip 13 th International Workshop on Radiation Imaging Detectors iWoRID 2011."— Presentation transcript:

1 Characterization of M-π-n CdTe Pixel Detectors Coupled to Hexitec Readout Chip 13 th International Workshop on Radiation Imaging Detectors iWoRID 2011 July 7, Zurich, Switzerland J. Kalliopuska on behalf of contributors VTT Technical Research Centre of Finland

2 2 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Contributors  VTT:  Radiation Detectors: Juha Kalliopuska  3D Integration: Harri Pohjonen  Oxford Instrument Analytical:  Space Projects: Seppo Nenonen, Hans Andersson  RAL STFC: Matthew Veale, Matt Wilson, Paul Seller Special gratitude for ESA ITI / ESTEC for funding the project 13 th IWoRID, Zurich7th July 2011

3 3 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Contents  VTTs resources  M-π-n CdTe Detector background  Patterning Processes  Pixel detector characteristics  Spectoscopic performance with Hexitec  Hexitec assembly  Polarization  Charge sharing  Energy resolution  Summary 13 th IWoRID, Zurich7th July 2011

4 4 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi MICRONOVA CLEANROOMS Main Cleanroom Characteristics Total Area2 600 m 2 Cleanroom ClassificationISO 4…ISO 6 (in clean bays)(10…1000) Temperature21  C  0,5  C Relative humidity45 %  5% Lithography, furnaces, dry and wet etching, sputtering, PECVD, ALD, wafer bonding, electroplating, flip-chip bonding Labs with built-in Cleanrooms Micropackaging lab - dicing saws, wire bonding SubTech lab - Ion implanter, CMP, backgrinder, spin etcher Process equipments are mainly for 150 mm wafer size, but some processes can be performed also on 200 mm wafers

5 5 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Lappeenranta Laser Processing Centre – LLPC  Lumera Rapid, 2 W pico second laser (1064, 532 and 355 nm, 9-12 ps)  Quantronics Integra C2.0, 2 W femto second laser (800 nm, 1-2 kHz, 130 fs)  20 W pico second fiber laser  20 W pulsed fiber laser  100 W diode pumped QS Nd:YAG laser  200 W pulsed CO2 laser  100 W single mode fiber laser  200 W single mode fiber laser  180 W diode laser Fine and micro processing 13 th IWoRID, Zurich7th July 2011

6 6 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Contents  VTTs resources  M-π-n CdTe Detector background  Patterning Processes  Pixel detector characteristics  Spectoscopic performance with Hexitec  Hexitec assembly  Polarization  Charge sharing  Energy resolution  Summary 13 th IWoRID, Zurich7th July 2011

7 7 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Background and motivation  Deep diffused junctions in Schottky (M- π -n) CdTe diodes are difficult to pattern with the basic lithographic methods from the anode side  Techniques, such as diamond blade and pulsed laser technology, opens possibility for material independent and cost efficient patterning  Benefits of patterning the anode side (pn- junction):  Thin entrance window for the radiation at full depletion  Electron readout (reduces trapping and polarization)  Improved energy resolution  Lower leakage current  Possibility for double sided detectors  Edgeless detector configuration 13 th IWoRID, Zurich7th July 2011

8 8 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Diamond blade and laser processes First attemptsCurrent qualityVertical profile Diamond blade Laser process 13 th IWoRID, Zurich7th July 2011

9 9 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Contents  VTTs resources  M-π-n CdTe Detector background  Patterning Processes  Pixel detector characteristics  Spectoscopic performance with Hexitec  Hexitec assembly  Polarization  Charge sharing  Energy resolution  Summary 13 th IWoRID, Zurich7th July 2011

10 10 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Pixelated detectors  20 x 20 pixels on 5x5 mm 2 M- π -n CdTe detectors  Diamond blade patterning  Pitch of 250 μm  Trench width of 15 μm  Trench depth of 20 μm  Thickness: 500 μm, 1 mm and 2 mm 1 mm 2 mm 13 th IWoRID, Zurich7th July 2011

11 11 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Pixel detector characteristics (1 mm)  Inter-pixel resistance above 10 12 Ω (above measurement limit)  Single pixel leakage current of 5 pA at 500 V reverse bias  Strong rectifying behavior -> low contact resistance  Leakage and inter-pixel resistances comparable to CdZnTe 13 th IWoRID, Zurich7th July 2011

12 12 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Contents  VTTs resources  M-π-n CdTe Detector background  Patterning Processes  Pixel detector characteristics  Spectoscopic performance with Hexitec  Hexitec assembly  Polarization  Charge sharing  Energy resolution  Summary 13 th IWoRID, Zurich7th July 2011

13 13 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Hexitec ASIC  Has an array of 80 x 80 energy resolving channels on a 250mm pitch  Charge amplifier with feedback, 2 µ s Shaper and Peak Hold per pixel  Two gain modes for 0.5-200keV and 5-2MeV energy ranges  Rolling row readout with 20MHz master clock  Measure energy and position of up to 10M X-rays/s/detector  Has programmable regions of interest for faster readout and low power operation  Is 3 side buttable to allow tiling for larger areas

14 14 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Hexitec measurement setup  The detector system contains all DAQ hardware and active cooling  The detector transfers data to a PC where it is saved to memory in real time  Detectors are gold stud bump bonded and wire bonded at the Rutherford Appleton Laboratory.

15 15 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Contents  VTTs resources  M-π-n CdTe Detector background  Patterning Processes  Pixel detector characteristics  Spectoscopic performance with Hexitec  Hexitec assembly  Polarization  Charge sharing  Energy resolution  Summary 13 th IWoRID, Zurich7th July 2011

16 16 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Polarization  1 mm and 2 mm thick detectors were stud bonded to Hexitec Readout chips  Reverse bias of 500 V (1 mm) and 1000 V (2 mm)  Recorded current drawn by the detector  5 pA/pix for 1 mm and 25 pA/pix for 2 mm (highly polarizable) 1 mm 2 mm 13 th IWoRID, Zurich7th July 2011

17 17 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Contents  VTTs resources  M-π-n CdTe Detector background  Patterning Processes  Pixel detector characteristics  Spectoscopic performance with Hexitec  Hexitec assembly  Polarization  Charge sharing  Energy resolution  Summary 13 th IWoRID, Zurich7th July 2011

18 18 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Charge sharing  Percantage of events were charge is shared between 2 or more pixels  Charge sharing increases due to polarization (drop in electric field)  Am-241 source with 60 keV photons  1 mm: 35% -> 50% in 30 hours  2 mm: 45% -> 65% in 3 hours 1 mm 2 mm 13 th IWoRID, Zurich7th July 2011

19 19 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Contents  VTTs resources  M-π-n CdTe Detector background  Patterning Processes  Pixel detector characteristics  Spectoscopic performance with Hexitec  Hexitec assembly  Polarization  Charge sharing  Energy resolution  Summary 13 th IWoRID, Zurich7th July 2011

20 20 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Detector response at 45 keV (1 mm)  Count rate and energy resolution drops at edge pixels, but not peak position  Visible Tb fluorescence peeks at 43.7 keV and 44.5 keV  Energy resolution around 700 ev at 45 keV (1.5 %)  2 hours of acquisition 13 th IWoRID, Zurich7th July 2011

21 21 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Energy resolution at 60 keV (1 mm)  Ref. Schottky CdTe detector had energy resolution of 1 keV @ 60 keV  Energy resolution of 1 mm M- π -n CdTe detector of 850 eV ± 300 eV (1.4% ± 0.5%) over 30 h of operation  At lower energies count rate and energy resolution drops faster 13 th IWoRID, Zurich7th July 2011

22 22 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi  Average energy resolutions of 850 eV ± 300 eV (1 mm) and 1269 eV ± 653 eV (2 mm)  2 mm detector biased to 1000 V  1 mm detector biased to 500 V Energy resolution at 60 keV (1 mm vs. 2 mm) 1 mm2 mm 13 th IWoRID, Zurich7th July 2011

23 23 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi Summary  1 mm and 2 mm thick Acrorad’s Schottky ( M- π -n) CdTe diodes were patterned with a diamond blade to pixelate the anode side of the diode  These 5 x 5 mm 2 detectors were stud bonded to Hexitec readout chips  Detectors showed high inter-pixel resistance in excess of 1000 GΩ and a low leakage current of 5 pA/pixel  A good spectroscopic performance was measured  FWHM energy resolution of 850 eV ± 300 eV (1 mm) @ 60 keV  FWHM energy resolution of 1269 eV ± 653 eV (2 mm) @ 60 keV  1 mm thick detectors showed stable performance and minor polarization up to 15 h of operation  The performance of 2 mm thick detector was reduced due to small number of well operating pixels  Next steps are to characterize a 500 um thick detector and identify the temperature and X-ray flux dependences to the polarization Thank you for your attention! 13 th IWoRID, Zurich7th July 2011

24 24 03/11/2010 IEEE RTSD Workshop www.vtt.fiwww.vtt.fi/detectorswww.vtt.fiwww.vtt.fi/detectors www.micronova.fiwww.micronova.fi VTT creates business from technology

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