2. SILVER OAK COLLEGE OF ENGG. & TECHNOLOGY  SUB – Electronics devices & Circuits  Topic- JFET  Student name – Kirmani Sehrish  Enroll. No. -130770111023  Faculty – Dhara Thakkar

3. Introduction (FET)  Field-effect transistor (FET) are important devices such as BJTs  Also used as amplifier and logic switches  What is the difference between JFET and BJT?

4. BJT is Current-controlled

5. FET is Voltage-controlled

6. Types of Field Effect Transistors (The Classification)  JFET MOSFET (IGFET) n-Channel JFET p-Channel JFET n-Channel EMOSFET p-Channel EMOSFET Enhancement MOSFET Depletion MOSFET n-Channel DMOSFET p-Channel DMOSFET FET

7.  High input impedance (M) (Linear AC amplifier system)  Temperature stable than BJT  Smaller than BJT  Can be fabricated with fewer processing  BJT is bipolar – conduction both hole and electron  FET is unipolar – uses only one type of current carrier  Less noise compare to BJT  Usually use as an Amplifier and logic switch Introduction.. (Advantages of FET over BJT)

8. Disadvantages of FET  Easy to damage compare to BJT

9.  There are 2 types of JFET n-channel JFET p-channel JFET  Three Terminal Drain – D Gate -G Source – S Junction field-effect transistor..

10. Gate Drain Source SYMBOLS n-channel JFET Gate Drain Source p-channel JFET

11.  N channel JFET: Major structure is n-type material (channel) between embedded p-type material to form 2 p- n junction. In the normal operation of an n-channel device, the Drain (D) is positive with respect to the Source (S). Current flows into the Drain (D), through the channel, and out of the Source (S) Because the resistance of the channel depends on the gate-to-source voltage (V GS ), the drain current (I D ) is controlled by that voltage N-channel JFET

12. N-channel JFET..

13.  P channel JFET: Major structure is p-type material (channel) between embedded n-type material to form 2 p-n junction. Current flow : from Source (S) to Drain (D) Holes injected to Source (S) through p- type channel and flowed to Drain (D) P-channel JFET

14. P-channel JFET..

16. JFET Characteristic for V GS = 0 V and 0<V DS <|V p |  To start, suppose V GS =0  Then, when V DS is increased, I D increases. Therefore, I D is proportional to V DS for small values of V DS  For larger value of V DS, as V DS increases, the depletion layer become wider, causing the resistance of channel increases.  After the pinch-off voltage (V p ) is reached, the I D becomes nearly constant (called as I D maximum, I DSS -Drain to Source current with Gate Shorted)

17. JFET for V GS = 0 V and 0<V DS <|V p | Channel becomes narrower as V DS is increased

18. Pinch-off (V GS = 0 V, V DS = V P ).

19. I D versus V DS JFET Characteristic Curve for V GS = 0 V and 0<V DS <|V p |

20. (Application of a negative voltage to the gate of a JFET ) JFET for

21. JFET Characteristic Curve..  For negative values of V GS, the gate-to-channel junction is reverse biased even with V DS =0  Thus, the initial channel resistance of channel is higher.  The resistance value is under the control of V GS  If V GS = pinch-off voltage( V P ) The device is in cutoff (V GS =V GS(off) = V P )  The region where I D constant – The saturation/pinch- off region  The region where I D depends on V DS is called the linear/ohmic region

23. p-Channel JFET

24. p-Channel JFET characteristics with I DSS = 6 mA and V P = +6 V.

25. Characteristics for n-channel JFET

26. P + + + Characteristics for p-channel JFET

28. Transfer Characteristics The input-output transfer characteristic of the JFET is not as straight forward as it is for the BJT. In BJT: I C = I B which  is defined as the relationship between I B (input current) and I C (output current).

29. Transfer Characteristics.. In JFET, the relationship between V GS (input voltage) and I D (output current) is used to define the transfer characteristics. It is called as Shockley’s Equation: The relationship is more complicated (and not linear) As a result, FET’s are often referred to a square law devices V P =V GS (OFF)

30.  Defined by Shockley’s equation:  Relationship between I D and V GS.  Obtaining transfer characteristic curve axis point from Shockley: When V GS = 0 V, I D = I DSS When V GS = V GS(off) or V p, I D = 0 mA Transfer Characteristics…

31. Transfer Characteristics JFET Transfer Characteristic CurveJFET Characteristic Curve

32. Thank You