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Fig. 6 from Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages (Image.

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Presentation on theme: "Fig. 6 from Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages (Image."— Presentation transcript:

1 Fig. 6 from Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages (Image 1 of 3) Vishal A. Tiwari et al 2016 Jpn. J. Appl. Phys. 55 04ED03 doi:10.7567/JJAP.55.04ED03

2 Fig. 6 from Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages (Image 2 of 3) Vishal A. Tiwari et al 2016 Jpn. J. Appl. Phys. 55 04ED03 doi:10.7567/JJAP.55.04ED03

3 Fig. 6 from Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages (Image 3 of 3) Vishal A. Tiwari et al 2016 Jpn. J. Appl. Phys. 55 04ED03 doi:10.7567/JJAP.55.04ED03

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