1. CHAPTER 4-2 4.7~4.17

2. 4.7 STRONG INVERSION

3. 4.7 Strong Inversion 4.7.1 Complete Strong-Inversion Model 4.7.1 4.7.2a 4.7.2b 4.7.3

4. 4.7 Strong Inversion 4.7.1 Complete Strong-Inversion Model 4.7.4 4.7.5 4.7.6 4.7.7 4.7.8

5. 4.7.9 4.7.10 4.7.11 4.7 Strong Inversion 4.7.1 Complete Strong-Inversion Model

6. 4.7.2b 4.7.10 4.7.12

7. 4.7 Strong Inversion 4.7.2 Body-Referenced Simplified Strong-Inversion Model 4.7.3 Source-Referenced Simplified Strong-Inversion Model 4.7.13 4.7.18 4.7.19 4.7.20a 4.7.20b 4.7.14 4.7.15 4.7.16 4.7.17

8. 4.4 Simplified All-Region Models 4.4.3 Source-Referenced Simplified All-Region Models 4.4.12 4.4.13a 4.4.13b 4.4.14

9. 4.7 Strong Inversion 4.7.3 Source-Referenced Simplified Strong-Inversion Model 4.7.21 4.7.22 4.7.23

10. 4.7 Strong Inversion 4.7.3 Source-Referenced Simplified Strong-Inversion Model 4.7.24

11. 4.7 Strong Inversion 4.7.3 Source-Referenced Simplified Strong-Inversion Model

12. 4.7.25 4.7.26 4.7.27 4.7.28

13. 4.7 Strong Inversion 4.7.3 Source-Referenced Simplified Strong-Inversion Model 4.7.29a 4.7.29b

14. 4.7 Strong Inversion 4.7.3 Source-Referenced Simplified Strong-Inversion Model 4.7.30 4.7.31 4.7.32 4.7.33

16. 4.7 Strong Inversion 4.7.4 Model Origin Summary

17. 4.8 WEAK INVERSION

18. 4.8 Weak Inversion 4.8.1 Special Conditions in Weak Inversion 4.8.1 4.8.2 4.8.3

19. 2.6 Inversion 2.6.24 2.6.25 2.6.26 2.6.27 2.6.28 2.6.29 2.6.30

20. 2.6 Inversion 2.6.31 2.6.32 2.6.33 2.6.34 2.6.35

21. 3.4 Regions of Inversion 3.4.21 3.4.22 3.4.23 3.4.24

22. 4.8 Weak Inversion 4.8.2 Body-Referenced Model 4.8.4 4.8.5 4.8.6 4.8.7

23. 4.8 Weak Inversion 4.8.3 Source-Referenced Model 4.8.8 4.8.9 4.8.10 4.8.11 4.8.12 4.8.13 4.8.14

24. 4.8 Weak Inversion 4.8.3 Source-Referenced Model 4.8.15 4.8.16

25. 5.5 Drain-Induced Barrier Lowering 5.5.1 5.5.2 5.5.3

26. 5.5 Drain-Induced Barrier Lowering 5.5.4

27. 5.5 Drain-Induced Barrier Lowering

28. 4.9 MODERATE- INVERSION AND SINGLE-PIECE MODELS 4.10 SOURCE- REFERENCED VS. BODY-REFERENCED MODELING

29. 4.9 Moderate-Inversion and Single-Piece Models 4.9.1 4.9.2

30. 4.11 EFFECTIVE MOBILITY 4.12 EFFECT OF EXTRINSIC SOURCE AND DRAIN SERIES RESISTANCE

31. 4.11 Effective Mobility

32. 4.11.1 4.11.2 4.11.3 4.11.4 4.11.5 4.11.6 4.11.7

33. 4.11 Effective Mobility 4.11.8 4.11.9 4.11.10 4.11.11 4.11.12 4.11.134.11.14

34. 4.11.15 4.11.16 4.11.17 4.11.18 4.11.19 4.11 Effective Mobility 4.11.20 4.11.21 4.11.22 4.11.23

35. 4.11 Effective Mobility 4.11.24 4.11.25 4.11.26 4.11.27

36. 4.11 Effective Mobility 4.11.28 4.11.29 4.11.30 4.11.31

37. 4.12 Effect of Extrinsic Source and Drain Series Resistance 4.12.1 4.12.2 4.12.3

38. 4.13 TEMPERATURE EFFECTS 4.14 BREAKDOWN

39. 4.13 Temperature Effects 4.13.1 4.13.2 4.13.3

40. 4.13 Temperature Effects

41. 4.14 Breakdown

42. 4.15 THE P-CHANNEL MOS TRANSISTOR 4.16 ENHANCEMENT- MODE AND DEPLETION- MODE TRANSISTORS 4.17 MODEL PARAMETER VALUES, MODEL ACCURACY, AND MODEL COMPARISON

43. 4.15 The p-Channel MOS Transistor 4.15.1 4.15.2 4.15.3 4.15.4

44. 4.15 The p-Channel MOS Transistor

45. 4.16 Enhancement-Mode and Depletion-Mode Transistors