1. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI G-APD Activities at GSI Title Present instrumentation for the project Pulse hight spectra of SiPM from different producers First spectral sensitivity measurements Development of a Cherenkov photon counter

2. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI 1. Present instrumentation for the project PicoQuant pulsed light source Driver PDL 800-D LED head λ = 460 nm, Δt = 1 ns Diode laser head λ = 660 nm, Δt = 50 ps Tektronix Digital Oscilloscope DPO7000 4 Channel, 2,5 GHz, 40 Gs/s 3.5 GHz differential probe VME CAEN 32 ch TAC 20ps CAEN 32 ch QDC 0.1 pC Precision V-A meters Two 5-1/2 digits Power suplies

3. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI Work Bench in PANDA Lab PicoQuant light source driver Dark box

4. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI Work Bench in APD Lab Monochrometer λ = 200 – 800 nm Light coupling to 20 quartz fibers Dark box G-APD box MAPD3

5. MPPC 11-25C, V bias = 70,3 V LED-450nm, AMP-0604 slow preamp (4ns) L = 6,0 L : light intensity L = 6,15 L = 6,1 10ns/div 90 mV/div Hamamatsu slow

6. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI L = 6,05 L = 6,10 MPPC 11-25C, V bias = 70,3 V LED-450nm, AMP-0611 fast preamp (.7ns) L : light intensity 5 ns/div 10 mV/div Laserhead 650 nm

7. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI MAPD1 (old), V bias =34.3 V LED 450 nm AMP-0611 (fast) Sensor #2 L = 6,05 L = 6,20 L : light intensity Sensor #1 5 ns/div 10 mV/div

8. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI L = 6.2; 5 mV; 10 ns MAPD3(old) L = 6.0; 5 mV; 5 ns MAPD 3A L = 6.1; 20 mV; 20 ns MAPD 3B L = 6.0; 5 mV; 10 ns Zecotek

9. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI SensL SPMM 3035 (3640 cells); V bias = 30.3 V L = 5.95; 20 mV; 20 ns L = 6.00: 20 mV; 20 ns L = 6.10; 20 mV; 20 ns L = 6.05; 20 mV; 20 ns

10. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI SensL SPMM 3020 (8640 cells) V bias = 30.3 V L = 5.90: 10 mV: 20 ns L = 6.00; 20 mV; 20 ns L = 6.05; 20 mV; 20 ns L = 6.10; 20 mV; 20 ns

11. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI Photonique SPMM 611B4 MM-PCB (4.4mm 2 ); blue sensitive V bias = 27 V L = 5.90; 10 mV; 20 ns L = 6.10; 10 mV; 20 ns L = 5.90; 5 mV; 20 ns L = 6.10; 10 mV; 5 ns

12. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI Spectral sensitivity of Hamamatsu sensor Calibrated PIN Diode MPPC 11-25C; 70.3V

13. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI Spectral sensitivity of Zecotek sensors Calibrated PIN diode MAPD 3B; 68.5V MAPD 3A; 66.8V MAPD 3; 97.5V

14. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI Large area sensor with light catcher 4 x 4 matrix Hamamatsu 33-050C or Zecotek MAPD3 35 mm 8.5 mm Aim: 8 x 8 matrix with PDE larger than 20 %

15. FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009 A.Wilms H.Orth G-APD Avtivities at GSI