1. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Resist loss observed for narrow lines caused by the leakage of light into dark mask areas, or a rise in the center intensity. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

2. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Resist height decreases as line-width decreases. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

3. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. In a simple threshold model, the critical dimension (CD) is obtained by applying a threshold to the optical intensity. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

4. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Center focus and image sampling height z. Rays from the optical system converge to the center focus plane when there is no film stack. The resulting intensity distribution can be sampled at any height within the resist. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

5. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. CD curves versus focus. With all other parameters fixed, changing the center focus shifts the curve left and right. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

6. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Threshold model can indicate if there is resist loss. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

7. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Resist loss occurring after the center intensity of a dark feature increases past a minimum value. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

8. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Intensity of isolated line at three focus conditions at a fixed height (30 nm from the top of the resist). The positive defocus condition has a center intensity greater than the one at 0 defocus. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

9. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Vertical diffusion convolves the intensity with a kernel, smoothing out a standing wave and allowing simulation of an intrinsic resist loss. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

10. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Comparison of resist line heights from a rigorous chemically amplified resist model and a compact resist model. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

11. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Isolated resist line heights of two compact models. The compact model with incorrect settings was underpredicting the resist loss. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

12. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Resist cross-section comparisons between rigorous and compact model for a T line end. The rigorous profile left sidewall angle was 79 deg compared to ∼ 80 deg from the compact resist model. The rigorous right sidewall angle was 55 deg compared to ∼ 57 deg from the compact resist model. The gap at a height of 10 nm was 150.4 in the rigorous model and 153.1 nm in the compact resist model. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

13. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Contours simulated at different heights. Pink shows the bottom of the resist and orange shows a contour closer to the top. This contour indicates a region or large resist loss at the point where the contour breaks. Red (solid contour) is at an intermediate height. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010

14. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Subresolution assist feature (SRAF) printing resist profiles for dark and clear mask backgrounds and positive tone resist. Figure Legend: From: Resist toploss and profile modeling for optical proximity correction applications J. Micro/Nanolith. MEMS MOEMS. 2014;13(4):043010. doi:10.1117/1.JMM.13.4.043010