1. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Cross section of capacitor TEG. Figure Legend: From: Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern J. Micro/Nanolith. MEMS MOEMS. 2008;7(3):033003-033003-5. doi:10.1117/1.2959176

2. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. High-frequency C-V characteristics after electron irradiation onto a MOS capacitor whose gate-dielectric thickness was 10.0nm. Beam energy was varied from 0.5to7.0keV. Figure Legend: From: Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern J. Micro/Nanolith. MEMS MOEMS. 2008;7(3):033003-033003-5. doi:10.1117/1.2959176

3. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Vfb shift measured from high-frequency C-V characteristics before and after electron irradiation. Beam energy was varied from 0.5to7.0keV. Figure Legend: From: Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern J. Micro/Nanolith. MEMS MOEMS. 2008;7(3):033003-033003-5. doi:10.1117/1.2959176

4. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Vfb shift as a function of electrode voltage at an beam energy of 0.5keV. Figure Legend: From: Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern J. Micro/Nanolith. MEMS MOEMS. 2008;7(3):033003-033003-5. doi:10.1117/1.2959176

5. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Quasi-staticC-V characteristics for beam energy of 0.5to7.0keV. SiO2 gate-dielectric thickness of MOS capacitor was 10.0nm. Figure Legend: From: Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern J. Micro/Nanolith. MEMS MOEMS. 2008;7(3):033003-033003-5. doi:10.1117/1.2959176

6. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Trap density at midgap as a function of beam energy. Trap densities were calculated from quasi-staticC-V characteristics. Figure Legend: From: Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern J. Micro/Nanolith. MEMS MOEMS. 2008;7(3):033003-033003-5. doi:10.1117/1.2959176

7. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Leakage current density as a function of beam energy. Figure Legend: From: Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern J. Micro/Nanolith. MEMS MOEMS. 2008;7(3):033003-033003-5. doi:10.1117/1.2959176

8. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Leakage current density as a function of electrode voltage at beam energy of 0.5keV. Figure Legend: From: Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern J. Micro/Nanolith. MEMS MOEMS. 2008;7(3):033003-033003-5. doi:10.1117/1.2959176