1. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Cross section of MOS capacitor TEG. Figure Legend: From: Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection J. Micro/Nanolith. MEMS MOEMS. 2007;6(1):013009-013009-7. doi:10.1117/1.2437195

2. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. High-frequency C-V characteristics after electron irradiation. Beam energy was changed from 0.5to5.0keV. Figure Legend: From: Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection J. Micro/Nanolith. MEMS MOEMS. 2007;6(1):013009-013009-7. doi:10.1117/1.2437195

3. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Vfb shift measured from high-frequency C-V characteristics before and after electron irradiation. Beam energy was changed from 0.5to5.0keV. Figure Legend: From: Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection J. Micro/Nanolith. MEMS MOEMS. 2007;6(1):013009-013009-7. doi:10.1117/1.2437195

4. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Vfb shift as a function of number of scans at beam energy of (a) 3.0 and (b) 5.0keV. Figure Legend: From: Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection J. Micro/Nanolith. MEMS MOEMS. 2007;6(1):013009-013009-7. doi:10.1117/1.2437195

5. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Quasi-static C-V characteristics for beam energy of 0.5to5.0keV. Figure Legend: From: Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection J. Micro/Nanolith. MEMS MOEMS. 2007;6(1):013009-013009-7. doi:10.1117/1.2437195

6. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Trap density at mid-gap as a function of beam energy. Trap densities were calculated from quasi-static C-V characteristics. Figure Legend: From: Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection J. Micro/Nanolith. MEMS MOEMS. 2007;6(1):013009-013009-7. doi:10.1117/1.2437195

7. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. Trap density at mid-gap as a function of number of scanning. Beam energy was (a) 3.0 and (b) 5.0keV. Figure Legend: From: Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection J. Micro/Nanolith. MEMS MOEMS. 2007;6(1):013009-013009-7. doi:10.1117/1.2437195

8. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. High-frequency and quasi-static C-V characteristics. Figure Legend: From: Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection J. Micro/Nanolith. MEMS MOEMS. 2007;6(1):013009-013009-7. doi:10.1117/1.2437195

9. Date of download: 7/8/2016 Copyright © 2016 SPIE. All rights reserved. High-frequency and quasi-static CV characteristics after annealing. The thickness of the gate dielectric was 10.0nm. Figure Legend: From: Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection J. Micro/Nanolith. MEMS MOEMS. 2007;6(1):013009-013009-7. doi:10.1117/1.2437195