1. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Flowcharts of the (a) previous and (b) new writing parameter optimization methods. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

2. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Details of step 2 in Fig. 1(b). Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

3. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Comparison of simulated contours generated by the continuous, hybrid, and DMC patterning prediction simulations. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

4. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Writing parameter definition. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

5. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Point spread function (PSF) comparison of (a) CASINO and in-house Monte Carlo simulators and (b) four different PSFs. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

6. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Energy distribution from direct Monte Carlo (DMC) simulation of an isolated line (a) before and (b) after considering the diffusion process. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

7. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Switching dosage determination for the selection of hybrid and direct Monte Carlo (DMC) patterning prediction simulations when (B,G)=(20 nm,1 nm). Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

8. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Illustration for critical-dimension (CD) and LER measurements. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

9. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Simulated resist profile for a 21-nm half-pitch dense line pattern. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

10. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. A preliminary algorithm for the new writing parameter optimization method. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

11. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Simulated resist patterns with writing parameters before and after applying the new optimization method. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

12. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. (a), Layout of a 6T-SRAM cell including its pull-down (PD) transistors, pull-up (PU) transistors, and pass gate (PG) transistors. (b), Corresponding circuit schematics. (c), Parameter values. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

13. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. 6T-SRAM patterning simulation results at 21-nm half pitch with writing parameters obtained from Sec. 5 (a) before and (b) after optimization. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007

14. Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Static noise margin (SNM) comparisons at 21-nm half pitch with the writing parameters obtained from Sec. 5 (a) before and (b) after optimization with the high-performance predictive technology models (PTMs) and (c) before and (d) after optimization with the low- power PTMs. Figure Legend: From: New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints J. Micro/Nanolith. MEMS MOEMS. 2012;11(3):033007-1-033007-13. doi:10.1117/1.JMM.11.3.033007