2. Index

3. 1 PART 01

4. 01 C1 C2 Csto

5. 2 PART 02

6. 02

7. ParamaterValue V OC 2.93V I SC 141.7uA P MAX 143.25uW R MPP 15kΩ V MPP 1.46V

8. 02 MPPT 시 1.5V Sampling 시 3V MP1 MN2 MN1 MP2 MOSSize(W/L) MN1 100u/1u MN2 100u/1u MP1 100u/1u MP2 100u/1u

9. 02

10. VDD(VBP)1.5V Cload 1pF

11. 02 VBP=1.5tt Gain 104.73dB 3-dB Fre 109.65Hz UGF 239.88KHz VDD(VBP)1.5V Cload 1pF

12. 02 VBP=1.5tt Idiss 83.76nA VDD(VBP)1.5V Cload 1pF

13. 02 VBP=1.5tt ICMR 0.8~1.5V VDD(VBP)1.5V Cload 1pF

14. 02 VBP=1.5tt CMRR 84.66dB VDD(VBP)1.5V Cload 1pF

15. 02 VBP=1.5tt PSRR+ 90.28dB VDD(VBP)1.5V Cload 1pF

16. 02 VBP=1.5tt PSRR- 91.65dB VDD(VBP)1.5V Cload 1pF

17. 02 VBP=1.5tt Offset V 32.38uV VDD(VBP)1.5V Cload 1pF

18. 02 VBP=1.5VSSTTFF Gain(dB) 104.62104.729102.52 Band Width(Hz) 27.54109.65301.99 UGF(kHz) 77.625239.88478.63 ICMR(V) 0.8~1.510.8~1.5730m~1.51 PSRR(dB) + 95.8890.2889.45 - 97.0991.6587.45 CMRR(dB) 88.9984.6681.86 Current Consumption(A) 18.86n83.76n247.5n

19. 02 VBP=1.5V -20 ℃ 27 ℃ 80 ℃ Gain(dB) 104.3104.729105.8 Band Width(Hz) 51109.65151.4 UGF(kHz) 131.8239.88333.8 ICMR(V) 0.8~1.5V PSRR(dB) + 101.1290.2883.52 - 98.6591.6581.78 CMRR(dB) 91.6784.6676.29 Current Consumption(A) 32.71n83.76n170.7n

20. 02 VDD(VBP)3V Cload 1pF

21. 02 VBP=3(C=1p)tt Gain 74.01dB 3-dB Fre 10.47kHz UGF 1.86MHz VDD(VBP)3V Cload 1pF

22. 02 VBP=3tt Idiss 2.43uA VDD(VBP)3V Cload 1pF

23. 02 VBP=3tt ICMR 1.33~3V VDD(VBP)3V Cload 1pF

24. 02 VBP=3tt CMRR 97.14dB VDD(VBP)3V Cload 1pF

25. 02 VBP=3tt PSRR+ 100.08dB VDD(VBP)3V Cload 1pF

26. 02 VBP=3tt PSRR- 93.69dB VDD(VBP)3V Cload 1pF

27. 02 VBP=3tt Offset V 47.61uV VDD(VBP)3V Cload 1pF

28. 02 VBP=3VSSTTFF Gain(dB) 77.774.0175.4 Band Width(Hz) 7.94k10.47k10.23k UGF(Hz) 1.62M1.86M2.04M ICMR(V) 1.33~3V PSRR(dB) + 96.5100.68104.07 - 104.2993.6987.25 CMRR(dB) 83.9597.14105.18 Current Consumption(A) 2.2u2.43u2.86u

29. 02 VBP=3V -20 ℃ 27 ℃ 80 ℃ Gain(dB) 75.4474.0173.7 Band Width(Hz) 11.5k10.47k UGF(Hz) 2.04M1.86M1.78M ICMR(V) 1.33~3V PSRR(dB) + 104.38100.6899.8 - 102.0193.6994.28 CMRR(dB) 102.7797.1488.72 Current Consumption(A) 2.34u2.43u2.71u

30. 02

31. L=1u(C=47u)Ripple W=100u 0.00112V

32. 02 L=1umMaxMinRipple w=10u 2.88315V2.88237V0.00078V w=50u 2.93358V2.93263V0.00095V w=80u 2.92931V2.92831V0.001V w=100u 2.92258V2.92146V0.00112V w=200u 2.86307V2.8615V0.00157V w=1m 1.77037V1.75868V0.1169V

33. 02

34. Cap 47u Res

35. 02 REfficiency 15K Ω 93.89%

36. 3 PART 03

37. 03

41. 1.30V V SP 0V~3V POR

42. 03 CornersSSTTFF Starting Voltage of POR (V) 1.601.300.99 Temperatures-20°C27°C80°C Starting Voltage of POR (V) 1.731.300.74

43. 03 Inv TG

44. 03

45. OSC Input of OSC in the Pulse_GEN AMP Input of AMP in the Sampler Comp 1, 2 Input of Comparator in the EN_GEN Comp 3 Input of Comparator in the Auto_SW PSW 1, 2 Input of the PSW

46. 03

47. ttssff Output Voltage & VDD sensitivity V SP (V) 1.5

48. 03 tt ff ss Temperature Coefficient V SP (V) 1.5

49. 03 tt ff ss Current Consumption V SP (V) 1.5

50. 03 Output VoltageTemperature CoefficientCurrent Consumption V SP (V) 1.3 Performance of the designed band gap at TT process

51. 03 V SP =1.3VSSTTFF Output Voltage(mV) 872.5759667 VDD sensitivity(%/V) 1.041.190.6 Temperature Coefficient @-20 ℃ ~80 ℃ (ppm/ ℃ ) 147.6 -67 (@-20℃~27℃) -158.8 61 (@27℃~80℃) Current Consumption(nA) 473.5328231

52. 03 V SP =1.5VSSTTFF Output Voltage(mV) 872760667 VDD sensitivity(%/V) 0.991.190.61 Temperature Coefficient @-20 ℃ ~80 ℃ (ppm/ ℃ ) 145 -66 (@-20℃~28℃) -161 62 (@28℃~80℃) Current Consumption(nA) 469327229

53. 03 ssttff Output current of the designed band gap for different process corner at 27°C V SP (V) 1.5

54. 03 ffttss Temperature coefficient of the designed band gap for different process corner at 27°C V SP (V) 1.5

55. 03 ttff ss VDD sensitivity of the designed band gap for different process corner at 27°C V SP (V) 1.5

56. 03 Output VoltageTemperature CoefficientVDD sensitivity V SP (V) 1.3 Performance of the designed band gap at TT process

57. 03 V SP =1.3VSSTTFF Output Current(nA) 238165.3115.6 VDD sensitivity(%/V) 0.030.350.84 Temperature Coefficient @-20 ℃ ~80 ℃ (ppm/ ℃ ) 429154526930 Current Consumption(nA) 473.5328231

58. 03 V SP =1.5VSSTTFF Output Current(nA) 235.8163.8114.67 VDD sensitivity(%/V) 0.030.220.53 Temperature Coefficient @-20 ℃ ~80 ℃ (ppm/ ℃ ) 428454466912 Current Consumption(nA) 469327229

59. 03 I OSC = 47.8nA I AMP = 143.3nA I comp = 305.16nA I PSW = 6.65nA

60. 03

63. W 4u L 2u W 1u L 25u W 1u L 25u W 30u L W 1u L 25u

64. 03 Cycle (ms) 9.50 Frequency (Hz) 105.2 Duty cycle (%) 54.74

65. 03 I DISS (nW) 50.43

66. 03 T_FF D_FF T_FF

67. 03

68. CLK MC 128 cycle CLK Cycle (ms) 9.68 MC Cycle (s) 1.2384

69. 03 19.31ms

70. 03

72. 사이즈변화

73. 03 SPIN MC SPOUT

74. 03 Discharged Voltage = 0.64uV Sampling Voltage = 375mV SPIN SPOUT

75. 03 Capacitance10pF20pF30pF Sampling Voltage (mV) 374.95374.98 Discharge Voltage (uV) Δ 4.05Δ 0.94Δ 0.33 사용 결정

76. 03

78. Gain 61.64 dB 3dB-freq 478.63 Hz UGF 306.9 kHz PM 82° V SP (V) 1.3

79. 03 ICMR+ 380.5mV ICMR- 15.5mV V SP (V) 1.3

80. 03 DC Sweep Output Swing 6.67mV~805mV V SP (V) 1.3

81. 03 PSRR+ PSRR- PSRR+ 70dB PSRR- 82dB V SP (V) 1.3

82. 03 CMRR 70dB V SP (V) 1.3

83. 03 V SP =1.3VSSTTFF Gain(dB) 57.561.6462.2 Band Width(Hz) 443.6478.63476.4 UGF(kHz) 173.4306.9336.5 Phase Margin(°) 798283 ICMR(mV) 13.5~31015.5~380.515.5~510.3 Output Swing(mV) 8~831.26.67~8055.89~782.3 PSRR(dB) + 527095 - 75.28284 CMRR(dB) 527084.8 Current Consumption(uA) 1.031.041.03

84. 03 V SP =1.3V-20°C27°C80°C Gain(dB) 61.361.6460 Band Width(Hz) 474.2478.63462.4 UGF(kHz) 265.5306.9283.8 Phase Margin(°) 818280 ICMR(mV) 12.5~348.715.5~380.529~470.6 Output Swing(mV) 4.9~8596.67~8059.3~760 PSRR(dB) + 557088.2 - 79.588281.3 CMRR(dB) 557081.6 Current Consumption(uA) 1.011.041.06

85. 03 Gain 62.2 dB 3dB-freq 478.6 Hz UGF 328.1 kHz PM 83° V SP (V) 1.5

86. 03 ICMR+ 585.2mV ICMR- 13.2mV V SP (V) 1.5

87. 03 DC Sweep Output Swing 6.74mV~819mV V SP (V) 1.5

88. 03 PSRR+ PSRR- PSRR+ 120dB PSRR- 82.5dB V SP (V) 1.5

89. 03 CMRR 89dB V SP (V) 1.5

90. 03 V SP =1.5VSSTTFF Gain(dB) 61.862.262.4 Band Width(Hz) 462.4478.6462.4 UGF(kHz) 313328.1357.27 Phase Margin(°) 8283 ICMR(mV) 6.1~51013.2~585.25.9~695.8 Output Swing(mV) 7.85~8456.74~8195.8~796.5 PSRR(dB) + 93120103 - 8182.583.6 CMRR(dB) 1248990.1 Current Consumption(uA) 1.081.061.05

91. 03 V SP =1.5V-20°C27°C80°C Gain(dB) 6462.261.2 Band Width(Hz) 455478.678 UGF(kHz) 369.8328.1370 Phase Margin(°) 858371.3 ICMR(mV) 10~539.213.2~585.225.3~656.6 Output Swing(mV) 4.8~8756.74~8199.4~771.6 PSRR(dB) + 99120103 - 83.582.581.3 CMRR(dB) 87.589 Current Consumption(uA) 1.051.061.07

92. 03 V SP (V) 1.3

93. 03 Gain 5.89 dB Magnitude 1.97 V/V 3dB-freq 144.54 kHz V SP (V) 1.3

94. 03 Output Swing 16.6mV~772.8mV V SP (V) 1.3

95. 03 Output Swing 550.5mV~772.8mV Input Swing 275.2mV~474.9mV V SP (V) 1.3

96. 03 Output Swing 380.19mV~772.8mV Input Swing 190.6mV~389.8mV V SP (V) 1.3

97. 03 V SP =1.3VSSTTFF Gain(dB) 65.89 동작 안 함 Magnitude (V/V) 1.9981.97 Band Width(Hz) 118.85144.54 Output Swing(mV) 19.75~868.4516.6~772.8 Current Consumption(uA) 1.070.98

98. 03 V SP =1.3V-20°C27°C80°C Gain(dB) 동작 안 함 5.896dB Magnitude (V/V) 1.971.99 Band Width(kHz) 144.54221.82 Output Swing(mV) 16.6~772.830.48~928.6 Current Consumption(uA) 0.981.29

99. 03 Gain 5.95 dB Magnitude 1.98 V/V 3dB-freq 193.64 kHz V SP (V) 1.5

100. 03 Output Swing 16.94mV~796mV V SP (V) 1.5

101. 03 Output Swing 549.88mV~796mV Input Swing 275.2mV~474.48mV V SP (V) 1.5

102. 03 Output Swing 380.2mV~778.4mV Input Swing 190.0mV~389.8mV V SP (V) 1.5

103. 03 V SP =1.5VSSTTFF Gain(dB) 65.95 동작 안 함 Magnitude (V/V) 1.9951.98 Band Width(Hz) 211.84193.64 Output Swing(mV) 20.14~896.3216.94~796 Current Consumption(uA) 1.141.02

104. 03 V SP =1.5V-20°C27°C80°C Gain(dB) 동작 안 함 5.956 Magnitude (V/V) 1.981.995 Band Width(Hz) 193.64223.36 Output Swing(mV) 16.94~79630.9~954.5 Current Consumption(uA) 1.021.32

105. 03

107. Gain 78.1 dB 3dB-freq 447.7 Hz UGF 230.7 kHz

108. 03 Hysteresis 20mV

109. 03 ICMR+ 400mV ICMR- 12.45mV

110. 03 PSRR+ 80.1dB PSRR- 98.3dB PSRR- PSRR+

111. 03 CMRR 98dB

112. 03 V SP =1.3VSSTTFF Gain(dB) 76.178.179.67 Band Width(Hz) 462.4447.7307 UGF(kHz) 159.6230.7252.9 Hysteresis(mV) 20 ICMR(mV) 6.3~290.512.45~4006.1~490.8 PSRR(dB) + 100.280.179.8 - 86.798.3100.9 CMRR(dB) 7898121 Current Consumption(nA) 316.7324324.7

113. 03 V SP =1.3V-20°C27°C80°C Gain(dB) 77.278.179.4 Band Width(Hz) 469.9447.7462.4 UGF(kHz) 224.91230.7205.6 Hysteresis(mV) 20 ICMR(mV) 6.3~326.3812.45~40013.2~464.8 PSRR(dB) + 85.480.179.8 - 92.698.3106.8 CMRR(dB) 81.798115.55 Current Consumption(nA) 320324500.7

114. 03 Gain 80.4 dB 3dB-freq 448.6 Hz UGF 255.2 kHz

115. 03 Hysteresis 20mV

116. 03 ICMR+ 565mV ICMR- 10mV

117. 03 PSRR+ 80.6dB PSRR- 95.6dB PSRR- PSRR+

118. 03 CMRR 129.2dB

119. 03 VDD=1.5VSSTTFF Gain(dB) 79.6680.480.6 Band Width(Hz) 446.7478.6469.9 UGF(kHz) 246255.2261.8 Hysteresis(mV) 20 ICMR(mV) 5.6~48210~5655.6~640.1 PSRR(dB) + 79.880.681 - 101.895.694.4 CMRR(dB) 120129.2133.3 Current Consumption(nA) 324.9324.6324.85

120. 03 VDD=1.5V-20°C27°C80°C Gain(dB) 79.780.480.9 Band Width(Hz) 469.9478.6431.5 UGF(kHz) 283255.2227 Hysteresis(mV) 20 ICMR(mV) 5.6~511.310~5656.3~640 PSRR(dB) + 79.880.681.3 - 99.395.692.7 CMRR(dB) 124.7129.2132 Current Consumption(nA) 324.8324.6324.4

121. 03 SW size = 2m/1u C 2 = 47uF R LOAD = 3kΩ C 1 = 300nF

122. 03

123. Level_sft IN Level_sft OUT 1.5V

124. 03 V VB,OC V VB,SP V LOAD

125. 03 V VB,OC = 2.895V

126. 03 1.36V~1.52V 1.37V~1.53V V LOAD V VB,SP V VB,OC

127. 03 94.25Hz CLK V VB

128. 03 Level_sft MC V VB,OC /8

129. 03 V VB,OC /8 AMP IN AMP OUT 742.54mV724.59mV728.69mV 371.64mV361.61mV364.69mV 372.56mV 363.25mV365.45mV

130. 03 MAX MIN V VB,OC /8 EN

131. 03 MAX = 372.7mV MIN = 351.63mV 차이 = 9.5mV 차이 = 11.97mV

132. 03 POR V VB,OC 1.25V

133. 03 Pulse Generator 54.8nA Amplifier 1.01uA Enable Generator 899.4nA Bias 376.2nA POR 6.833pA Total 2.34uA 2.5s~3.5s

134. 03 V VB,OC 2.90V CLK frequency 94.25Hz V VB,SP 1.37V~1.53V AMP IN 371.64mV AMP OUT 742.54mV V LOAD 1.36V~1.52V

135. 03 SW size = 2m/1u C = 47uF R LOAD = 5kΩ C = 300nF

136. 03 V TG,OC V TG,SP V LOAD

137. 03 V TG,OC = 2.93V

138. 03 1.37V~1.54V 1.38V~1.54V

139. 03 V VB,OC /8 AMP IN AMP OUT 730.27mV 365.53mV 365.05mV

140. 03 MAX = 375.7mV MIN = 354.51mV 차이 = 9.58mV 차이 = 10.75mV

141. 03 POR V VB,OC 871.68mV

142. 03

143. VMC TMC MC V TEG,OC /8 V VB,OC /8

144. 03 V VB,OC /8 V TEG,OC /8 MC VMC TMC

145. 03 SW size = 2m/1u C = 47uF R LOAD = 3kΩ C = 300nF C = 100nF SW size = 2m/1u SW size = 800n/350n Piezo Themal AC-DC Converter Power Switch Power Switch Auto Switching Controller MPPT

146. 03

147. Result of Comparator VV OC TV OC Vibration 3V Thermal 0V

148. 03 MC VMC TMC Vibration 3V Thermal 0V

149. 03 Thermal Vibration 3V Thermal 0V

150. 03 Vibration 3V Thermal 0V V TEG TPSW VPSW V VB VDD

151. 03 Vibration 3V Thermal 1V V TEG TPSW VPSW V VB VMPPT

152. 03 Vibration 0V Thermal 3V V VB VPSW TPSW V TEG VDD

153. 03 Vibration 1V Thermal 3V V VB VPSW TPSW V TEG VMPPT

154. 02 TMC VMC MC 1~5s6~10s V VIB 3V V TEG 3.2V0V

155. 02 VIB TEG VSP VLOAD 1~5s6~10s V VIB 3V V TEG 3.2V0V

156. VLOAD VSP TEG VIB 02 1.54V 1.34V 1~5s6~10s V VIB 3V V TEG 3.2V0V 1.26V~1.57V 1.49V~1.66V 2.72V 3.18V

157. 4 PART 04

158. 04

160. Stage 5 Inverter W=1u L=5u Capacitor NMOS W=5u L=5u

161. 04 3.47MHz Clock 발생 전류소모 : 5.613uA

162. 04 Vcp=1.5V, 27° ssttff Frequency(Hz) 2.64M3.47M4.4M Current Consumption(A) 4.1u5.613u7.87u Vcp=1.5V, tt -20°27°80° Frequency(Hz) 3.63M3.47M3.31M Current Consumption(A) 5.69u5.613u5.623u

163. 04 Stage 3

164. 04

165. Dickson Charge Pump 5 stage w=5u, l=350n, C=2p C L =1nF, R L =10MΩ Frequency=800KHz Vcp=1.5V

166. 04 Vsto = 3.06V

167. 04

168. CTS Charge Pump 4 stage w=5u, l=350n, C=2p C L =1nF, R L =10MΩ Frequency=800KHz Vcp=1.5V

169. 04 Vsto =4.02V

170. 04

171. Body Controlled Charge Pump 5 stage w=5u, l=350n, C=2p C L =1nF, R L =10MΩ Frequency=800KHz Vcp=1.5V

172. 04 Vsto = 3.25V

173. 04 Type 2 > Type1 > Type 3 Type2 Type3 Type1 Type2 Type3

174. 04 STAGE SW SIZE – W (m) Cap (F) Total Cap (F) Vsto (V) Efficiency (%) Type1 55u2p8p3.0621.01 Type2 45u2p8p4.0242.65 Type3 55u2p8p3.2520.48 C L =1nF, R L =10MΩ, Vcp=1.5V, Frequency=800KHz

175. 04 R L =100KΩ, Vsto=0.18V R L =300KΩ, Vsto=0.48V C L =1nF, Vcp=1.5V, Frequency=800KHz R L =500KΩ, Vsto=0.73V R L =1MΩ, Vsto=1.2V R L =2MΩ, Vsto=1.8V R L =3MΩ, Vsto=2.18V R L =5MΩ, Vsto=2.6V R L =10MΩ, Vsto=3.06V

176. 04 C L =1nF, Vcp=1.5V, Frequency=800KHz R L =100KΩ, Vsto=0.22V R L =300KΩ, Vsto=0.6V R L =500KΩ, Vsto=0.95V R L =1MΩ, Vsto=1.76V R L =2MΩ, Vsto=2.57V R L =3MΩ, Vsto=3.03V R L =5MΩ, Vsto=3.53V R L =10MΩ, Vsto=4.02V

177. 04 C L =1nF, Vcp=1.5V, Frequency=800KHz R L =100KΩ, Vsto=0.16V R L =300KΩ, Vsto=0.44V R L =500KΩ, Vsto=0.69V R L =1MΩ, Vsto=1.18V R L =2MΩ, Vsto=1.82V R L =3MΩ, Vsto=2.23V R L =5MΩ, Vsto=2.71V R L =10MΩ, Vsto=3.25V

178. 04 C L =1nF, Vcp=1.5V, Frequency=800KHz Type 2

179. 04 C L =1nF, R L =10MΩ, Frequency=800KHz Vcp=1.0V, Vsto=1.46V Vcp=1.2V, Vsto=2.08V Vcp=1.4V, Vsto=2.73V Vcp=1.6V, Vsto=3.4V Vcp=1.8V, Vsto=4.1V

180. 04 C L =1nF, R L =10MΩ, Frequency=800KHz Vcp=1.0V, Vsto=2.49V Vcp=1.2V, Vsto=3.1V Vcp=1.4V, Vsto=3.71V Vcp=1.6V, Vsto=4.33V Vcp=1.8V, Vsto=4.94V

181. 04 C L =1nF, R L =10MΩ, Frequency=800KHz Vcp=1.0V, Vsto=1.31V Vcp=1.2V, Vsto=2.08V Vcp=1.4V, Vsto=2.86V Vcp=1.6V, Vsto=3.61V Vcp=1.8V, Vsto=4.42V

182. 04 C L =1nF, R L =10MΩ, Frequency=800KHz Type 2

183. 04 C L =1nF, R L =10MΩ, Vcp=1.5V f=200KHz, Vsto=2.1V f=300KHz, Vsto=2.46V f=400KHz, Vsto=2.68V f=500KHz, Vsto=2.82V f=600KHz, Vsto=2.93V f=700KHz, Vsto=3V f=800KHz, Vsto=3.06V f=900KHz, Vsto=3.11V f=1MHz, Vsto=3.15V

184. 04 C L =1nF, R L =10MΩ, Vcp=1.5V f=200KHz, Vsto=2.82V f=300KHz, Vsto=3.28V f=400KHz, Vsto=3.54V f=500KHz, Vsto=3.72V f=600KHz, Vsto=3.85V f=700KHz, Vsto=3.94V f=800KHz, Vsto=4.02V f=900KHz, Vsto=4.08V f=1MHz, Vsto=4.13V

185. 04 C L =1nF, R L =10MΩ, Vcp=1.5V f=200KHz, Vsto=2.17V f=300KHz, Vsto=2.57V f=400KHz, Vsto=2.82V f=500KHz, Vsto=2.98V f=600KHz, Vsto=3.09V f=700KHz, Vsto=3.18V f=800KHz, Vsto=3.25V f=900KHz, Vsto=3.3V f=1MHz, Vsto=3.34V

186. 04 C L =1nF, R L =10MΩ, Vcp=1.5V Type 2

187. 04 C L =1nF, Vcp=1.5V CP 바꿔가며 측정 로드저항 바꿔가며 측정

188. 04 Oscillator 내부 1.3MHz 발생 Buffer 내부 2 단으로 구성 으로 효율 측정

189. 04 C L =1nF, Vcp=1.5V RL 100M50M10M5M1M500K200K Type1 Vsto(V) 3.353.252.9312.71.731.20.64 효율 (%) 5.558.3219.6623.4619.7514.357.8 Type2 Vsto(V) 4.54.474.264.032.812.020.92 효율 (%) 13.8420.9628.1938.2240.6130.6714.18 Type3 Vsto(V) 3.83.663.132.851.671.110.55 효율 (%) 7.9710.7821.9425.0318.9213.046.67 W=1u, L=350n, C=3p

190. 04 C L =1nF, Vcp=1.5V Type 2

191. 04 Power Converter Test Schematic Power Converter Schematic

192. 04 Charge Pump Schematic

193. 04 C L =1nF, R L =1.2162MΩ, Vcp=1.5V, Frequency=3.47MHz ss ff tt Vcp=1.5V, 27° ssttff Vsto(V) 2.533.295.05

194. 04 C L =1nF, R L =1.2162MΩ, Vcp=1.5V, Frequency=3.31MHz -20° 80° 27° Vcp=1.5V, tt -20°27°80° Vsto(V) 3.013.294.02

195. 04 C L =1nF, R L =1.2162MΩ, Vcp=1.5V, Frequency=3.47MHz tt, 27° VIN = 1.3VVIN = 1.4VVIN = 1.5V Vsto(V) 2.022.813.29 VIN=1.4V VIN=1.3V VIN=1.5V

196. 04 Test Schematic R L =20MΩ

197. 04 VTG VSTO VTG(V)VSTO(V) 1.11.71

198. 04 Test Schematic R L =500KΩ

199. 04 VVB(V)VSTO(V) 1.151.55 VSTO VVB

200. 5 PART 05

201. 05

202. =47u 1.3MΩ 1.1MΩ 800kΩ

203. 05

204. POR MUX

205. 05 TT FF SS

206. 05 VSTO=3VSSTTFF Starting voltage Of POR(V) 1.191.61.14

207. 05

209. Vref=772.16mV TT Vref=666.9mV FF Vref=877.6mV SS

210. 05 Negative TC =-60.94ppm/℃ Positive TC =52.06ppm/℃ TT FF SS TC=-180.7ppm/℃ TC=162.8ppm/℃

211. 05 TT FF SS VSTO=1.8VSSTTFF ㅿ V(2~3V) 5.9mV5.4mV5mV VDD sensitivity 0.7%/V 0.8%/V

212. 05 TT FF SS 291.7nA 427.9nA 200.5nA

213. 05 TT FF SS Iref=166.7nA Iref=244.8nA Iref=114.3nA

214. 05 TC=5578.6ppm/℃ TT FF SS TC=7140.3ppm/℃ TC=4370.5ppm/℃

215. 05 TT FF SS VSTO=1.8VSSTTFF ㅿ V(2~3V) 6.1nA5.2nA4.5n VDD sensitivity 2.5%/A3.1%/A3.9%/A

216. 05 VSTO=1.8VSSTTFF Output Voltage(mV) 877.6762666.9 VDD sensitivity(%/V) 0.7 0.8 Temperature coefficient @-20 ℃ ~80 ℃ (ppm/ ℃ ) 162.8 -58.3 (@-20℃~27℃) -180.7 51.1 (@27℃~80℃) Current Consumption(nA) 427.9291.7200.5

217. 05 VSTO=1.8VSSTTFF Output Current(nA) 244.8166.7114.3 VDD sensitivity(%/A) 2.53.13.9 Temperature coefficient @-20 ℃ ~80 ℃ (ppm/ ℃ ) 4370.55578.67140.3

218. 05

219. VSTO=1.8tt Gain 74.3dB 3-dB Fre 172kHz UGF 16.6MHz

220. 05 VSTO=1.8tt ICMR 0~788.5mV

221. 05 VSTO=1.8tt PSRR+ 128dB

222. 05 VSTO=1.8tt PSRR- 158dB

223. 05 VSTO=1.8tt CMRR 93.8dB

224. 05 VSTO=1.8tt Hysteresis 10mV

225. 05 VSTO=1.8VSSTTFF Gain 73.17dB74.3dB75.14dB 3 dB-Freq 170kHz172.7kHz141.6kHz UGF 14MHzf16.6MHzf16.7MHzf ICMR 0~657.4mV0~785.5mV0~850mV PSRR(+) 116.3dB128dB142.6dB PSRR(-) 156dB158.2dB159dB CMRR 79.4dB93.8dB111.7dB Hysteresis 10mV

226. 05 VSTO=1.8V -20 ℃ 27 ℃ 80 ℃ Gain 74.72dB74.3dB73.74dB 3 dB-Freq 128.8kHz172.7kHz199.5kHz UGF 15.14MHzf16.6MHzf17MHzf ICMR 0~836.5mV0~785.5mV0~638mV PSRR(+) 142.4dB128dB116.7dB PSRR(-) 160.4dB158.2dB155.2dB CMRR 110.1dB93.8dB81.3dB Hysteresis 10mV

227. 05 VDDMPPTPMU Bias 1.3V1.8V POR 1.3V3V

228. 05

229. POR Vsto Vref EN VLoa d On Off

230. 05 MAX OUT MAX MIN MIN OUT

231. 05 MAX OUT MAX MIN MIN OUT VLoad

232. 05 PMU Vload 1.78~1.96V 전류소모 1.78uA Vref 760mV Vmax 760m~850mV Vmin 684m~760mV

233. 05 TEG = 6V VCP VTG EN VLoad

234. 05 VCP VTG EN VLoad

235. 05 VIB = 3V VVBPiezo VCP EN VLoad

236. 05 VVB Piezo VCP EN VLoad

237. 6 PART 06

238. 06

239. OSC 7bit Counter Sampler AMP MC Generator Enable Generator BIAS POR D-flip flop

240. 06 OSC & Buffer Charge Pump

241. 06

246. 7 PART 07

247. 07 1. S. Abelaziz 외, “A Low Start-up Voltage Charge Pump for Energy Harvesting Application”, Faculty of Engineering, Cairo University, 2012, p. 2. 2. 윤은정, “Design of Triple-inputEnergy Harvesting Circuit with MPPT Control”, 2012, pp.40-50. 3. pp. 51-52. 4. 위의 책, p. 56. 5. 위의 책, p.84. 6. 위의 책, pp,145-166. 7. 박진영, “Charge pump 의 비교 분석과 저전압용 고효율 Charge pump 설 계 및 분석 ”, 2007, p.56.