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Design and development of thin double side silicon microstrip sensors for CBM experiment Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow.

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Presentation on theme: "Design and development of thin double side silicon microstrip sensors for CBM experiment Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow."— Presentation transcript:

1 Design and development of thin double side silicon microstrip sensors for CBM experiment Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

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3 Sensor Geometry –According simulation optimal sensors size for central part, because very hard radiation environment and high multiplicity - 40 60 mm 2 –Strip pitch for both sides - 58 μm –Stereoangle - ±7.5 о –Number of strips on both sides - 1024 –Number of readout chips for both sides - 8 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

4 Sensor N-side Contact Pads 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

5 N-side poly-Si resistors 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

6 N-side p-stops configuration 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

7 N-side Guard Rings 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

8 Sensor P-side 1 st and 2 nd metal 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

9 Sensor P-side 1 st and 2 nd metal details 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

10 P-side Guard Rings 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

11 Results Number of masks: N-side – 8 P-side – 9 Estimated production time - 3 months + 1 month for masks production. 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

12 Expected Full Depletion Voltage (FDV) - <50 V Working voltage – 70 - 250 V Dark current at 100 V – < 15 nА/см 2 AC capacitance - >10 pF/см Capacitors breakdown voltage - >170 V Bias resistor value - 1.0 ± 0.4 MOhm Number of bad strips - <0.5%/side 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

13 Last This work have been done within CBM- MPD STS Consortium and supported by ISTC, see Yu. Murin presentation 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

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