1. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) These PowerPoint color diagrams can only be used by instructors if the 3 rd Edition has been adopted for his/her course. Permission is given to individuals who have purchased a copy of the third edition with CD-ROM Electronic Materials and Devices to use these slides in seminar, symposium and conference presentations provided that the book title, author and © McGraw-Hill are displayed under each diagram.

2. P b centers https://nanohub.org/resources/16608/watch?resid=16669

3. P b centers

4. E’ Center The E’ center has two Si atoms joined by a weak strained Si-Si bond with a missing oxygen atom, This is referred to as an oxide vacancy It is one of the most dominant radiation-induced defects. Because SiO 2 can be amorphous and due to thermodynamic considerations, E’ centers also pre- exist in oxide films 11 Oldham, T.R., Ionizing Radiation Effects in MOS Oxides, World Scientific, Singapore, 1999. Dieter K. Schroder: http://schroder.personal.asu.edu/Published%20Papers/CRC%20Paper%202009.pdfhttp://schroder.personal.asu.edu/Published%20Papers/CRC%20Paper%202009.pdf

5. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Antiferromagnetic Materials In this antiferromagnetic BCC crystal (Cr) the magnetic moment of the center atom is cancelled by the magnetic moments of the corner atoms (an eighth of the corner atom belongs to the unit cell). Possess a magnetic ordering in which the magnetic moments of alternating atoms in the crystals align in opposite directions The net result is that, in the absence of an applied field, no net magnetization Antiferromagnetism occurs below a critical temperature called the Neel temp, T N Above T N, antiferromagnetic material becomes paramagnetic Fig 8.16

6. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Ferrimagnetic Materials Illustration of magnetic ordering in a ferrimagnetic crystal. All A-atoms have their spins aligned in one direction an all B-atoms have their spins aligned in the opposite direction. As the magnetic moment of an A- atom is greater than that of a B-atom, there is net magnetization, M, in the crystal. Fig 8.17 Ferrimagnetic materials exhibit magnetic behavior similar to ferromagnetism below a critical temperature called the Curie temperature, T C. Above T C, they become paramagnetic

7. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) The isolated Fe atom has a spin magnetic moment of 4  The isolated Fe atom has 4 unpaired spins and a spin magnetic moment of 4  Fig 8.18 Reason for the alignment of magnetic moments is NOT the magnetic forces between the moments (like a bar magnet will tend to align “head to tail” – SNSN…) Although the interaction of energy between the electrons has nothing to do with magnetic forces, it does depend on the orientation of their spins (m s ), or on their spin magnetic moments, and it is less when spins are parallel Two e- parallel their spins, not because of direct magnetic interaction, but because of the Pauli exclusion principle and the electrostatic interaction energy

8. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Hund’s rule for an atom with many electrons is based on the exchange interaction. Together, they constitute what is known as an exchange interaction: Forces two electrons to take the same m s but different m l – if this can be done within the Pauli exclusion prinicple Reason for the four unpaired spins in the 3d shell (previous ppt slide) The isolated Fe atom has a spin magnetic moment of 4  Fig 8.19

9. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) The isolated Fe atom has a spin magnetic moment of 4  The isolated Fe atom has 4 unpaired spins and a spin magnetic moment of 4  Fig 8.18 Outer e- are not strictly confined to their parent Fe atoms – particularly the 4s electrons

10. Fig 8.20 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) The exchange integral as a function of r/r d, where r is the interatomic distance and r d the radius of the d-orbit (or the average d-subshell radius. Cr to Ni are transition metals. For Gd, the x-axis is r/r f where r f is the radius of the f-orbit.

11. Fig 8.21 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Normalized saturated magnetization vs. reduced temperature T/T C where T C is the Curie temperature (1043 K).

12. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

13. Fig 8.22 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) (a) Magnetized bar of ferromagnet in which there is only one domain and hence an external magnetic field. (b) Formation of tow domains with opposite magnetizations reduces the external field. There are, however, field lines at the ends. (c) Domains of closure fitting at the ends eliminates the external fields at the ends. (d) A speciment with several domains and closure domains. There is not external Magnetic field and the specimen appear sunmagnetized.

14. Fig 8.23 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) (a)An unmagnetized crystal of iron in the absence of an applied magnetic field. Domains A and B are the same size and have opposite magnetizations. (b) When an external field is applied the domain wall migrates into domain B which enlarges A and B. The result is that the specimen now acquires net magnetization.

15. Fig 8.24 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Magnetocrystalline anisotropy in a single iron crystal. M vs. H depends on the crystal on the crystal direction and is easiest along [100] and hardest along [111]

16. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Table 8.4 Exchange interaction, magnetocrystalline anisotropy energy K, and saturation magnetostriction coefficient λ sat MaterialCrystalE ex ≈ kT C (meV) EasyHardK (mJ cm−3) λ sat (× 10 −6 ) FeBCC90 ; cube edge ; cube diagonal 4820 [100] −20 [111] CoHCP120// to c axis  to c axis 450 NiFCC50 ; cube diagonal ; cube edge5−46 [100] −24 [111]

17. Fig 8.25 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) In a Bloch wall the neighboring spin magnetic moments rotate gradually and it takes several hundred atomic spacings to rotate the magnetic moment by 180 .

18. Fig 8.26 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Potential energy of a domain wall depends on the exchange and anisotropy energies

19. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Bloch Wall Optimal Bloch wall thickness minimizes the total PE of the wall, U wall Potential energy of a Bloch wall depends on its thickness 

20. Fig 8.27 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Magnetostriction Magnetostriction means that the iron crystal in a magnetic field along x, an easy direction, elongates along x but contracts in the transverse directions.

21. Fig 8.28 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Stress and strain distributions around a dislocation and near a domain wall.

22. Fig 8.29 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Interaction of a Bloch wall with a non-magnetic (no permanent magnetization) inclusion. (a)The inclusion becomes magnetized and there is magnetostatic energy. (b)This arrangement has lower potential energy and is thus favorable.

23. Fig 8.30 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Schematic illustration of magnetic domains in the grains of an unmagnetized polycrystalline iron sample. Very small grains have single domains.

24. Fig 8.31 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) M vs. H behavior of a previously unmagnetized polycrystalline iron specimen. An example grain in the unmagnetized specimen is that at O. (a) Under very small fields the domain boundary motion is reversible. (b) The boundary motions are irreversible and occur in sudden jerks. (c) Nearly all the grains are single domains with saturation magnetizations in the easy directions. (d) Magnetizations in individual grains have to be rotated to align with the field, H. (e) When the field is removed the specimen returns along d to e. (f) To demagnetize the specimen we have to apply a magnetizing field of H c in the reverse direction.

25. Fig 8.32 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) (a)A typical M vs. H hysterisis curve (b)The corresponding B vs. H hysterisis curve. The shaded area inside the hysterisis loop Is the energy loss per unit volume per cycle.

26. Fig 8.33 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) The B vs. H hysterisis loop depends on the magnitude of the applied field in addition to the Material and sample and size.

27. Fig 8.34 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Removal of the demagnetizing field at f does not necessarily result in zero magnetization as the sample recovers along f-e'

28. Fig 8.35 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A magnetized specimen can be demagnetized by cycling the field intensity with a decreasing magnitude, i.e. tracing out smaller and smaller B-H loops until the origin is reached, H=0.

29. Fig 8.36 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) The area between the B-H curve and the B-axis is the energy absorbed per unit volume in magnetization or released during demagnetization.

30. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Hysteresis Hysteresis power loss per unit volume Frequency Maximum magnetic field n = 1.6 Constant  150.7

31. Fig 8.37 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Soft and hard magnetic materials

32. Fig 8.38 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Types of Permeability Definitions of (a) maximum permeability and (b) initial permeability.

33. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

37. Fig 8.39 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Hard Magnetic Materials Hard magnetic materials and (BH) max.

38. Fig 8.40 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A Single Domain Fine Particle A single domain fine particle.

39. Fig 8.41 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Shape Anisotropy A single domain elongated particle. Due to shape anisotropy, magnetization prefers to be along The long axis as in (a) Work has to be done to change M from (a) to (b).

40. Fig 8.42 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A permanent magnet with an air gap What is the magnetic energy stored in the gap? A permanent magnet with a small air gap.

41. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) (BH) max For a Permanent Magnet B-H for air gap Energy in air gap of a magnet B-H for magnet material The air gap line (1) intersects the magnet characteristics (2) at these values: the operating point P (1) (2)

42. Fig 8.43 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) (a)Point P represents the operating point of the magnet and determines the magnetic field inside and outside the magnet. (b) Energy density in the gap is proportional to (BH) and for a given geometry and size of gap this is maximum at a particular magnetic field B m * or B g *.

43. Fig 8.44 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A superconductor such as lead evinces a transition to zero resistvity at a critical temperature T c (7.2 K for Pb) whereas a normal conductor such as silver does not, and exhibits residual resistivity at the lowest temperatures.

44. Fig 8.45 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) The Meissner effect. A superconductor cooled below its critical temperature expels all magnetic field lines from the bulk by setting up a surface current. A perfect conductor (σ = ∞) shows no Meissner effect.

45. Fig 8.46 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Left: A magnet over a superconductor becomes levitated. The superconductor is a perfect Diamagnet which means that there can be no magnetic field inside the superconductor. Right: Photograph of a magnet levitating above a superconductor immersed in liquid nitrogen (77 K). This is the Meissner effect. (SOURCE: Photo courtesy of Professor Paul C.W. Chu.)

46. Fig 8.47 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Type I Superconductor The critical field vs. temperature in Type I superconductors.

47. Fig 8.48 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Type I Superconductor The critical field vs. temperature in three examples of Type I superconductors.

48. Fig 8.49 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Characteristics of Type I and Type II superconductors. B = µ o H is the applied field and M is the overall magnetization of the sample. Field inside the sample, B inside = µ o H + µ o M, which is zero only for B < B c (Type I) and B < B c1 (Type II).

49. Fig 8.50 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Type II Superconductor The mixed or vortex state in a Type II superconductor.

50. Fig 8.51 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Type II Superconductor Temperature dependence of B c1 and B c2.

51. Fig 8.52 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Type II Superconductor The critical surface for a niobium-tin alloy which is a Type II superconductor.

52. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) In 1986 J. George Bednorz (right) and K. Alex Müller, at IBM Research Laboratories in Zurich, discovered that a copper oxide based ceramic-type compound (La-Ba-Cu-O) which normally has high resistivity becomes superconducting when ooled below 35 K This Nobel prize winning discovery opened a new era of hightemperature- superconductivity research; now there are various ceramic compounds that are superconducting above the liquid nitrogen (an inexpensive cryogen) temperature (77 K). |SOURCE: IBM Zürich Research Laboratories.

53. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) These high temperature superconductor (HTS) flat tapes are based on (Bi 2- x Pb x )Sr 2 Ca 2 Cu 3 O 10-d (Bi-2223). The tape has an outer surrounding protective metallic sheath. Right: HTS tapes having ac power loss below 10 mW/m have a major advantage over equivalent-sized metal conductors, in being able to transmit considerably higher power loads. Coils made from HTS tape can be used to create more compact and efficient motors, generators, magnets, transformers and energy storage devices. | SOURCE: Courtesy of Australian Superconductors.

54. Fig 8.53 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Superconducting electromagnets used on MRI. Operates with liquid He, providing a magnetic field 0.5–1.5 T. SOURCE: Courtesy of IGC Magnet Business group. A solenoid carrying a current experiences radial forces pushing the coil apart and axis forces compressing the coil.

55. Fig 8.54 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A Copper Pair A pictorial and intuitive view of an indirect attraction between two oppositely traveling electrons via a lattice distortion and vibration.

56. Fig 8.55 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Pauli Spin Paramagnetism Pauli spin paramagnetism in metals due to conduction electrons

57. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Pauli Spin Paramagnetism Pauli spin paramagnetism

58. Fig 8.56 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Ferromagnetism Energy band model of ferromagnetism. (a) The split d-band. (b) The s- band is not affected. The arrows in the bands are spin magnetic moments.

59. Fig 8.57 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) (a) The origin of anisotropic magnetoresistance (AMR). The electrons traveling along the field experience more scattering than those traveling perpendicular to the field. (b) Resistivity depends on the current flow direction with respect to the applied magnetic field. Anisotropic Magnetoresistance (AMR)

60. Fig 8.58 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Giant Magnetoresistance (GMR) A highly simplified view of the principle of the giant mangetoresistance effect. (a)The basic trilayer structure. (b)Antiparallel magnetic layers with high resistance R AP. (c)An external field aligns layers, parallel alignment has a lower resistance R P.

61. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Giant Magnetoresistance Giant magnetoresistance effect GMR and relative magnetizations of magnetic layers

62. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

63. Fig 8.59 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Resistance of the multilayer structure depends on the relative orientations of magnetization in the two magnetic layers.

64. Fig 8.60 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Principle of the spin valve (a) No applied field. (b) Applied field has fully oriented the free layer magnetization. (c) Resistance change vs. applied field magnetic field (schematic) for a FeNi/Cu/FeNi spin valve.

65. Fig 8.61 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) The principle of longitudinal magnetic recording on a flexible medium, e.g. magnetic tape in an audio cassette

66. Fig 8.62 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) The principle of the hard disk drive magnetic recording. The write inductive head and the GMR read sensor have been integrated into a single tiny read/write head.

67. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

68. Fig 8.63 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A simplified schematic illustration of a MIG (metal-in-gap) head. The ferrite core has the poles coated with a ferromagnetic soft metal to enhance the head performance.

69. Fig 8.64 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A highly simplified schematic illustration of the principle of a thin film head.

70. Fig 8.65 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A magnetic tape is typically a magnetic coating on a flexible polymer (e.g. PET) Sheet in the form of a tape.

71. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

73. Fig 8.66 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) (a)A Josephson junction is a junction between two superconductors separated by a thin insulator. (b) In practice thin film technology is used to fabricate a Josephson junction.

74. Fig 8.67 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) I-V characteristics of a Josephson junction for positive currents when the current is controlled by an external circuit.

75. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Josephson Effect Josephson junction supercurrent (tunneling current) AC Josephson effect Applied voltage modulates phase Phase change upon tunneling

76. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Josephson Effect AC Josephson effect The current oscillates at a frequency f and hence radiates EM waves at this frequency. This current oscillation frequency depends only on e, h and V f = 2e/h = 483,597.9 GHz per volt. IEEE Standard of 1 V is defined as THE voltage that generates a current oscillation frequency of 2e/h Hz or 483,597.9 GHz

77. Fig 8.68 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) (a)Above T c, the flux line enter the ring (b)The ring and magnet cooled through T c. The flux lines do not enter the superconducting ring but stay in the hole. (c) Removing the magnet does not change the flux in hole.

78. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) Flux Quantization Trapped flux is quantized Integer

79. Fig 8.69 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

80. Fig 8.70 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) (a) A transformer with N turns in the primary. (b) Laminated core reduces eddy current losses.

81. Fig 8.71 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A ferrite antenna of an AM receiver.

82. From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

83. Fig 8.72 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) A permanent magnet with two pieces of yoke and an air-gap

84. Fig 8.73 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005) The gap of a recording head and the fringing field for magnetizing the tape (Highly simplified)