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Solid-state Laser Crystal and Device Laboratory Yen-Yin Li Speaker ： Yen-Yin Li Adviser ： Sheng-Lung Huang Topic Report Graduate Institute of Photonics.

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Presentation on theme: "Solid-state Laser Crystal and Device Laboratory Yen-Yin Li Speaker ： Yen-Yin Li Adviser ： Sheng-Lung Huang Topic Report Graduate Institute of Photonics."— Presentation transcript:

1 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li Speaker ： Yen-Yin Li Adviser ： Sheng-Lung Huang Topic Report Graduate Institute of Photonics and Optoelectronics ~National Taiwan University 1 2012.09.20 Design on EUV based OCT

2 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU Power for EUV application Resolution of EUV based OCT Full-field type: Power and SNR Table list of OCT component Summary 2 Outline

3 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 3 Power for EUV application Laser source: 1064nm, 2mJ, 20kHz Average power: 40W (ideal Amp W/O SRS) CE from laser to EUV is 1% The EUV power at source is 400mW Collection optics: Effective focal length: 100mm Diameter: 76.2mm (3”) Hole diameter:30/16/9 mm (2” f=127/225/400mm) Collection efficiency modified by angular distribution (Cosθ)^5.84 Collection efficiency: 37.37/43.42/45.11 Vacuum transmission of 55cm traveling at 0.05 torr : 77.75% Transmission of Si/Zr filter: 80%

4 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 4 Different types of EUV based OCT p=110mm; q=407mm Source size: 20μm Image size: 80μm Frame size:1mm Sphere Ellipse

5 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 5 Power for EUV application The ideal power for the EUV application is Vacuum transmission of 100cm traveling at 0.0005 torr : 99.5% (91%,20m) Si/Mo reflection: 60% Beam splitter: T=R=25% Power before enter the reflection multi-layer mirror: Time-domain OCT: 1.24mW Full-field OCT: 1.24mW Lateral resolution 100nm, Magnification=100x with Full-field OCT CCD pixel size is 13μm. CCD or PD Sample Arm Reference Arm Multi-layer mirror

6 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU Resolution about EUV based OCT 6 Axial resolution: 80.19nm @ bandwidth 1nm 114.56nm @ bandwidth 0.7nm 400.95nm @ bandwidth 0.2nm 20nm @ bandwidth 4nm Lateral resolution: Maximum : 5nm @ NA=1 33nm @ NA=0.15 100nm @ NA=0.05 Full-field OCT lateral resolution is determined by CCD’s pixel size and diffraction limitation (NA of lens). The resolution is limited by the lateral resolution.

7 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 7 CCD specific - ANDOR Pixels:1024x1024 Pixel size: 13x13 (μm) QE:40% @13.5nm Read noise: 2.5 e - @50kHz Dark current: 0.00012 e - Pixel well depth:100,000 Maximum full frame rate:2.2

8 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 8 CCD specific - Princeton

9 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 9 CCD specific - Adimec Pixels:1024x1024 Pixel size: 7.5x7.5 (μm) QE:??? Dark current: 0.02 e - Pixel well depth:65,000

10 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 10 Lateral resolution Focal length (mm) Resolution: 128.4nm Magnification: 101x Image length:20.24m (P=20cm) (nm)

11 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 11 SNR for full-field OCT The ideal power for the EUV application is Vacuum transmission of 100cm traveling at 0.0005 torr : 99.5% (91%,20m) Si/Mo reflection: 60% Beam splitter: T=R=25% Power before enter the detector: Full-field OCT: 1.25mW x(615 pixel ) -2 =3.28 nW/pixel (ideal) Lateral resolution 100nm, Magnification=100x with Full-field OCT CCD pixel size is 13μm. SNR=32.7dB (46dB) CCD or PD Sample Arm Reference Arm Multi-layer mirror

12 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 12 EUV based OCT table 1 ItemSpherical collection mirrorReflection optics Specification Or Description 1.Diameter: 3 inch 2.Focal length: 8.75cm 3.Radius of curvature: 175 mm 4.Hole in centre: 30 mm 5.Coating Si/Mo on glass for high reflectivity 1.Diameter: 1 inch 2.Focal length: 19.8cm 3.Radius of curvature: 396 mm 4.Coating Si/Mo on glass for high reflectivity OrderITRC CostCooperation

13 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 13 EUV based OCT table 2 ItemBeam splitterAberration-corrected concave grating Specification Or Description 1.Standard product (incident angle at 45°) 2.Transmission and reflection is 26% at 13.5 nm both. 3.Window size is 5mm (10mm) square with the frame size of 10mm square without holder Delivery date: within 8 weeks after confirming the order 1.Standard product (part No. 001-0437) 2.Grooves per mm: 1,200o 3.Size (H x W x T): 30 x 50 x 10 mm 4.Blaze angle: 3.2° 5.Mounting standard incidence angle: 87° 6.Wavelength range with flat-field focusing: 5-20 nm OrderNTT-ATHitachi High-Technologies CostNT: 200,000 or 300,000(2pcs)About 200,000

14 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 14 EUV based OCT table 3 ItemCharge coupled deviceFilter Specification Or Description 1.Princeton Instruments (PIXIS-XO 100B) Pixels: 1340x100 Pixel size: 20x20 (μm) QE: 42% @13.5nm Read noise: 2.5 e - @100kHz Dark current: 0.001 e - Pixel well depth: 1,000,000 2.ANDOR (920[DO]) Pixels:1024x256 Pixel size: 26x26 (μm) QE:40% @13.5nm Read noise: 4 e - @50kHz Dark current: 0.0005 e - Pixel well depth:500,000 Maximum full frame rate: 10 1.Si/Zr filter 2.Transmission: 80% SupplierPrinceton Instruments or ANDOR ??? CostAbout NT: 1,000,000???

15 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 15 Summary 1.The full-field EUV based OCT have better lateral resolution than others. But, it need long image length due to the CCD pixel size not compact to the axial resolution. 2.Cooperation with ITRI: two spherical multi-layer mirrors, and 1” plane mirrors. 3.The EUV based OCT must exist the beam splitter from NTT-AT.

16 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU Thank you for your attention End 16

17 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 17 Beam splitter Window sizeFrame sizeCost (JPY) 5mm square10mm square800,000 (2pcs) 10mm square20mm square1,200,000 (2pcs)

18 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 18 Working pressure http://henke.lbl.gov/optical_constants/ Air with path length 200 cm at temperature 298 K. 95% 40E -3 /7E -3 torr

19 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 19 SNR: source variation

20 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 20 Collection mirror - ellipse Source size: 20μm Image size: 80μm Frame size:1mm X-scan Y-scan

21 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 21 SNR equations

22 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 22 Numerical calculation: ANDOR SNR= 56.35 dB @ 55.78mW Electron number can’t excess the well depth. Exposure time is just 60 ms. (100ms per frame) The SNR is limited by shot noise.

23 Solid-state Laser Crystal and Device Laboratory Yen-Yin Li NTU 23 Numerical calculation: Princeton SNR= 59.37 dB @ 55.78mW Electron number can’t excess the well depth. Exposure time is just 150 ms. (??? per frame) The SNR is limited by shot noise now.

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