1. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Report from CNM activities Giulio Pellegrini Centro Nacional de Microelectronica Barcelona, Spain

2. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Medipix2 Diodes 2D spreading Test structures Atlas pixel 3d pads strips Long strip 10x10 matrix MOS Test for SEM 3x3 matrix Pilatus Mask design

3. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Layout 3 detectors have been bump bonded in VTT to a Medipix2 chip. 3 more to do. Strip detectors irradiated with neutrons: fluence 5E15 cm -2

4. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Fabricated detectors

5. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 3rd Workshop on Advanced Silicon Radiation Detectors C. Fleta Double sided 3D First run is p-in-n: 250 μm p+ columns in 300 μm n-type substrate Electrode fabrication: 1.ICP etching of the holes: Bosch process, ALCATEL 601-E 2.Holes partially filled with 3 µm LPCVD poly 3.Doping with P or B 4.Holes passivated SiO 2 (all fabrication done in-house) -Deep RIE-ICP. - Load-lock manual one 4” wafer - SF 6 etching - C 4 F 8 passivation - Cooled mechanical clamping :He-Ln2 - Possibility of Cryogenic etching.

6. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Bump bonding at CNM Small clean room class 100 at CNM dedicated to packaging: Flip chip, Wire bonding, CMP Joint project with IFAE (High Energy Physics Institute) Bump bonding machine Süss Microtech FC150 Installation finished last month, in operation. Bumping process ready: electrodeposited SnPb and SnAg CMP G&P POLI-400L (Installation pending)

7. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Holes etching

8. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Poly filling polysilicon

9. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Doping of poly Poly-n + Si-n +

10. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Poly etching

11. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Second etching

12. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Second poly filling

13. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Si-n - Si-p + Si-n + SiO2 Poly-p + Poly-n + Al/Cu Passiv Final sample Mask Levels Back-window N-DIFF N-HOLES P-HOLES POLY WINDOW METAL PASSIV Bump bonding

14. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 3D technology 10  m holes 55  m pitch 90 minutes etching 300  m thick wafer Aspect ratio 24:1

15. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 3D technology 10um 45um

16. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 3D technology pixelsstrips

17. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Pixel configuration Polysilicon contact Opening in the passivation P-type Hole Metal

18. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Atlas pixels

19. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Test structures Strips (DC coupled) Pilatus

20. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Optical Profiler Total bending: in strip detector we measured a curvature of 0.6um In Pixel detector VTT measured a bending of 3 um.

21. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Testing Charge Collection Efficiency Electrical characterization Imaging with Medipix2 chip Irradiation with neutrons please see Chris Parkes´ talk

22. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 New Fabrication Run 8 wafers p-type 8 wafers n-type In Fabrication, due for the end of June 2008

23. Giulio Pellegrini 12th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Ljubljana, Slovenia, 2-4 June 2008 Thank you