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Micro-scale Tensile Tester Update # 3 Cheng-Chieh Chao Maryam Ziaei-Moayyed Ranadeep Bhowmick Sujay Bangalore Ramachandra ME342 Spring 2006 Prof. Beth.

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Presentation on theme: "Micro-scale Tensile Tester Update # 3 Cheng-Chieh Chao Maryam Ziaei-Moayyed Ranadeep Bhowmick Sujay Bangalore Ramachandra ME342 Spring 2006 Prof. Beth."— Presentation transcript:

1 Micro-scale Tensile Tester Update # 3 Cheng-Chieh Chao Maryam Ziaei-Moayyed Ranadeep Bhowmick Sujay Bangalore Ramachandra ME342 Spring 2006 Prof. Beth Pruitt

2 SU-8 dogbones SU-8 2 ( 2 µm) SU-8 5 ( 5 µm) Mask for the dog-bone structure (with the correct polarity/alignment) in hand Processing : Substrate Pretreat Coat Soft bake [ 65 o C 1 min; 95 o C larger time to ensure that wafer does not stick to mask] Expose using Karlsuss Si substrate SU-8 2 ( 2 µm) 8 s; using 4exposures of 2 sec duration SU-8 5 ( 5 µm) 25 s; using 10 exposures of 2.5 sec duration Al substrate SU-8 2 ( 2 µm) 7.2 s; using 3exposures of 2.4 sec duration SU-8 5 ( 5 µm) 22.5 s; using 9 exposures of 2.5 sec duration Post exposure bake Develop

3 Images of the Su-8 dog-bones 200 µm 20 µm Characterization: Thickness Exposure time Stiction

4 Dog-bone Release 1.Omnicoat Release Steps: Coat release layer (~ 30 nm thickness) Bake @ 200 o C Coat, expose, post expose bake, develop SU-8 structures Strip SU-8 Immerse in Remover PG (NMP) at 80 o C Disadvantage: Su-8 peels off but cannot retain its structural integrity and forms a gel like substance

5 Dog-bone Release 2.Electrolytic Release anode cathode sacrificial Al layer Si wafer SU-8 dog-bone Pt foil Schematic of the set-up for Al dissolution Steps Al layer of 500 nm thickness deposited on Si wafer SU-8 is deposited/exposed/developed on top of the Al layer Place another Si/glass wafer on top of the wafer with the dogbone structure to help prevent disintegration of Su8 since its hydrophobic The sacrificial layer of Al removed by anodic dissolution ( 2 M NaCl in H 2 0; 0.5 V) Waiting for the results !! electrolytic solution

6 Actuator : Revised Process flow

7 Actuator Characterization:

8 Cell phone camera Image of the Actuator

9 Good exposure(1.6 µm PR) Bad exposure(7 µm PR)

10 Sensing Circuit

11 Things to be done 1.Testing to be done with AD7746 Evaluation Board 2.Start on the SOI wafers Pad-etch still needs to be characterized 3.Training required on : wire- bonding wafer saw nano-vac 4. Back up plan for CPD for releasing comb drive from the oxide layer

12 Thank You


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