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Thin Films Technology 2014 Lecture 3: Physical Vapor Deposition PVD
Jari Koskinen Aalto University Page 1
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Contents Plasma Ion surface interactions Film growth mechanisms
Different PVD methods Commercial PVD coatings Scale up 2
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Contents Plasma Ion surface interactions Film growth mechanisms
Different PVD methods Commercial PVD coatings Scale up 3
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PVD Plasma Plasma Colliding electrons ionise atoms
Ions and electrons accelerate in electric field collisions excite atoms de-excitation creates photons – visible light
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Glow discharge
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Glow discharge
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Glow discharge
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Glow discharge
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Glow discharge
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Glow discharge
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Glow discharge
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Glow discharge
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DC Plasma glow discharge and arc
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RF Plasma glow discharge
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RF Plasma glow discharge self bias
M. Ohring
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Self bias at electrodes
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Energetic ion surface interactions
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PVD coating process (High) vacuum long mean free path of ions
high ion energy cleaning of surface desorption of gas sputtering of surface removal of oils water oxides
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Total pressure of residual gasses
Average mean free path (distance between collission) in nitrogen residual gas <λ> Ultra Good High High Inter-mediate Rough Total pressure of residual gasses
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Contents Plasma Ion surface interactions Film growth mechanisms
Different PVD methods Commercial PVD coatings Scale up 20
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Source materials Coating material from solid target or gas
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Energetic ion and surface interactions
collision cascade – s thermal spike – s Fast diffusion fast cooling relaxation Kts. simulaatio
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Sputter yield angle dependence and energy distribution
Sputter yield on different directions of 60° Kr+ ions on W Θ Energy distribution of target atoms after 900 eV Ar+ bombardment
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Sputter yield and sublimation energy
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Sputter yield angle and energy dependence
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Sputter yield angle and energy dependence for different metals and ions
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Sputtering yield Argon
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Contents Plasma Ion surface interactions Film growth mechanisms
Different PVD methods Commercial PVD coatings Scale up 28
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PVD (Physical Vapour Deposition)
Material from solid or gas Plasma Energetic ions hit surface Ions and neutrals grow the film
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PVD growth process Ion energy Ei 10 - 1000 eV
Surface temperature -190°C - 500°C (normally < 200°C) incidence angle Ion density Gas pressure Substrate surface Chemistry Impurities Topography
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Competition of growing crystals
Handbook of Deposition Technologies for Films and Coatings - Science, Applications and Technology (3rd Edition) Edited by: Martin, Peter M. © 2010 William Andrew Publishing Sivu 31
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Coating structure and plasma parameters
hot slow temperature ions cold fast 10/2/201710/2/2017
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Modified Thorton diagram
A. Anders, Thin Solid Films 518 (2010) 4087–4090 Sivu 33
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Subplantation Sivu 34
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Subplantation Schematic diagram of densification by subplantation. A fraction of the incident ions penetrate the film and densify it, the remainder end up on the surface to give thickness growth. Sivu 35
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Subplantation and experiments -Carbon
Sivu 36
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evolution of roughness
Fig. 2. Schematic of roughness variation with film thickness in a general case. At first, the films consist of a series of islands where the new phase has nucleated, and the roughness increases quickly. Then the roughness peaks and decreases as the islands coalesce to form a closed, continuous film. The third stage consists of a constant roughness for epitaxial films. Finally, the roughness increases gradually above a ‘roughening transition’. The smoothness of tetrahedral amorphous carbon Diamond and Related Materials, Volume 14, Issues 3-7, March-July 2005, Pages C. Casiraghi, A.C. Ferrari, J. Robertson
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Stress Control Gas pressure /temperature
Tensile stress due to collapsing of voids Higher temperature annealing of structure – low stress Compressive stress – subplantation 10/2/201710/2/2017
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Compressive stress fFD = conc. of Frenkel defects fAr = conc. of argon
ΔΩFD = volume change due to Frenkel defects ΔΩAr = volume change due to argon entrapped 10/2/201710/2/2017
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Tensile stress 10/2/201710/2/2017
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Ion beam nano roughening
Enhanced adhesion
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Contents Plasma Ion surface interactions Film growth mechanisms
Different PVD methods Commercial PVD coatings Scale up 42
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PVD methods PVD Sputtering Diode Magnetron Ion beam Triode Resistive
Evaporation Diode Magnetron Ion beam Triode Resistive Arc Inductive e-beam Radio freq. Pulsed cathode DC sputtering Pulsed DC Balanced Unbalanced Balanced Unbalanced Filtered Non-filtered Steered Random
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Ion beam sputtering Kaufman
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Surface coating methods – more details
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PVD methods
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Electron beam evaporation
Tyhjiöhöyrystys
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Ionipinnoitus
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Sputtering
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Magnetron-sputtering
Lähde: Angstrom Sciences, Inc.
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Principles of Sputtering animation Sputtering process in large area
Sputtering process in large area Sputtering on Si wafers
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Magnetron-laitteisto
Unballaced magnetron sputtering Magnetron-laitteisto
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Magnetron-laitteisto
Closed field magnetron sputtering Magnetron-laitteisto
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PVD-pinnoitin
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“Pulsed Plasma Diffusion”
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HIPIMS denser films
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Reactive sputtering
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Reactive sputtering
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Reactive sputtering
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Reactive sputtering
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Reactive sputtering
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Reactive sputtering
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Arc discharge deposition
Arc discharge video
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Arc disharge – cathode spot
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Arc discharge process arc current concentrated into filaments – arcs
intense electron emission intense ion emission due to electron current ( atoms/electrons – 1/100) ionization of atoms – formation of plasma flow of ions to cathode – intense sputtering of atoms A/m2 overlapping thermal spikes materials is melted and sublimated in cathode spots cathode spots move randomly or could be steered by using magnets electons ionize vapor and create more electrons – increase of current ions accelerate due to potential difference in plasma due to multiple collisions with fast electrons macro particles (up to 10 µm diam.I are formed Timko, Nordlund simulations
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Filtered arc
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Three types of bonding of carbon atoms
sp3 Four string σ bonds in tetraedric directions sp2 Two σ bonds in plane One weekπ bond ( non localised electron- conductivity) sp1 Two σ linear bonds Two week π bonds (non localised electrons- conductivity)
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Carbon structures- allotropies
a diamond b graphite c lonsdalite (hex diam.) d fullerene 60C e fullerene 540C f fullerene 70C g amorphous carbon h carbon nano tube
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Carbon Carbon has 3 hybridised bondings sp3, sp2, sp1
sp3 bondings form four equal carbon-carbon bonds producing tetrahedral structure of diamond Graphite has three sp2 hybrid orbitals in plane
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Diamond-like carbon (DLC)
Various forms of C-H alloys presented in a ternary phase diagram DLC is a metastable form of amorphous carbon DLC films have a mixed sp3/ sp2 structure with different sp3 and sp2 proportions depending on deposition technique and parameters 74
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Properties of ta-C as function of Ei
Sivu 76
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Composition, effect to properties
Composition as a function of deposition parameters, nitrogen composition (partial pressure of N2) Sivu 77
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Pulsed laser deposition PLD
high ionization evaporation of any material also in reactive gas stoichimetry of target to the surbstrate good control of depostion rate expensive lasers slow depostion rate not yet in industrial level
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Ei as a function of laser pulse energy
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Multilayer coatings TiAlN-multilayer
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Ultrahard nanocomposte coatings - single layer
At least two immiscible materials nano-crystalline and amorphous Crystal growth limited by segregation of other phase in grain boundary Smaller crystal size -> higher hardness Typical: nc-MeN/ nitride nc-MeN/metal
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Contents Plasma Ion surface interactions Film growth mechanisms
Different PVD methods Commercial PVD coatings Scale up 82
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PVD coatings - commercial
TiAlN-multilayer Platit coatings Coating guide Barlzers coatings Hauzer Techno Coating
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DUPLEX- coating plasmanitrading + PVD-coating
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Contents Plasma Ion surface interactions Film growth mechanisms
Different PVD methods Commercial PVD coatings Scale up 85
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Large volumes, up scaling Hear reflecting, self cleaning, photo voltaic
/www.
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New emerging PVD methods
vacuum polymer deposition (VPD) high-power pulsed magnetron sputtering (HPPMS or HIPIMS) filtered cathodic arc deposition glancing angle deposition (GLAD).
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