1. Semiconductor Laboratory
HLL Structure
Devices
Projects
MPP Projects
MPP Project Review

2. Structure and Organisation
Joint Laboratory of
MPI für Physik
MPI für extraterrestrische Physik
Directors:
S. Bethke (MPP)
R. Genzel (MPE)
Nov. 08, replacing
G. Hasinger
Head of laboratory:
H.-G. Moser (MPP)
L. Strüder (MPE)
~ 800 m² clean room
Complete production
Chain for Si-processing
Test facilities
Location: Siemens Plant in Neu-Perlach
MPP Project Review

3. HLL Personal MPP; 20 MPE: 31 PNS 40 MPP Personal Senior
Physicists/Engineers: L. Andricek, G. Liemann, H.-G. Moser, R. Richter, A. Wassatsch
Postdocs: A. Macchiolo (ATLAS/SCT), J. Ninkovich
Technicians: Z. Albrechstkirchinger, G. Fuchs, M. Schnecke, S. Groß
Secretary: E. Fleischmann, P. Schmalhofer
IT: A. Ramic
PhD-Student: C. Jendrysik, C. Koffmane, A. Ritter, S. Rummel (till July)
Diploma Student: P. Müller
Azubi: S. Fritsch
Practica: E. Ganis
MPP; 20
MPE: 31
PNS 40
MPP Project Review

4. Events 2009 Organisation of
2nd International Workshop on DEPFET Detectors and Applications
At Ringberg castle
May 3-6
Focused on Belle II
Organisation of
11th European Symposium on Semiconductor Detectors
(formerly known as ‘Elmau Conference’)
At Wildbad Kreuth
June 7-11
MPP Project Review

5. New Equippment Ion Implanter
Till 2007: Ion implantations done at Infineon plant next door
Since then:
Infineon Villach or IBS, Marseille
Slow: ~ 10 days
Quality problems (backside handling)
2009: installed refurbished implanter
Medium current, keV, P, B, As
~ 1.7 M€ (from MPG)
New furnaces for development lab:
Oxidation furnace (MPP)
LPCVD furnace (Universe)
MPP Project Review

6. Devices Pixel (and strip) sensors robust (rad hard) LHC, sLHC
Silicon drift detectors
spectroscopy
(X-ray flourescence)
pn-CCDs
x-ray imaging
Astrophysics
Free electron lasers
Active pixel sensors (DEPFET)
vertex detectors (ILC; Belle II)
Devices with avalanche amplification
(SiPM)
Photon counting
Cerenkov Telescopes
Calorimetry
MPP Project Review

7. DEPFET Each pixel is a FET on a fully depleted bulk
Signal electrons accumulate in the internal gate and modulate the transistor current
~ 400 pA/e-
Accumulated charge can be removed by a clear contact (“reset”)
Fully depleted: large signal, fast collection
Low capacitance: low noise
Fast readout (80ns/pixel row)
Direct pixel access (no charge shifting, like in CCDs), ROI readout possible
Most pixels are off (but sensitive): low power!
Can implement CDS or fixed pedestals (subtraction in ROC)
MPP Project Review
Column parallel / rolling shutter readout

8. HLL Projects MPE CFEL MPP pnCCDs pnCCDs Pixels/Strips ->FLASH/BESSY
->LCLS
->XFEL
DEPFETs
MPP
Pixels/Strips
-> ATLAS/sLHC
DEPFETs
-> ILC
-> Belle II
SiPMs
-> MAGIC/EUSO/CTA
-> ILC (calorimeter)
MPE
pnCCDs
->XMM/eRosita
DEPFETs
->BepiColombo
->IXO(XEUS)
SDD
->MarsRover
->SIDDHARTA
Avalanche CCD
BIB Detectors
-> optical/infrared
Astronomie
MPP Project Review
& generic R&D (new devices)

9. XMM/Newton pnCCD paper was cited 1.000 times in refereed journals
Working since launch (10. Dez. 1999) without any problem.
The energy the AlK line (1.5keV) decreased since launch from 98 eV to 99 eV (FWHM).
Since launch the operating conditions have never been changed.
Up to now more than observations were made with XMM – Newton. 80 % with the pnCCD as prime instrument
Up to now, > refereed astrophysics publications have been made
Very high redshift QSO observed by XMM EPIC
MPP Project Review
pnCCD paper was cited times in refereed journals

10. eRosita (2012) eROSITA ROSAT XMM Science Goals
 First imaging all-sky survey up to 10 keV
 Investigation of dark energy and dark matter
 Pathfinder for IXO
MPP Project Review 10

11. XEUS -> IXO History of XEUS (IXO) "constitutional meeting in ´96
ESA mission under study 2002
ESA cosmic vision process 2007
ESA, JAXA, NASA study 2008
assessment study, 2009
definition phase study: 2011
changed from formation flight to
telescope structure
XEUS I
XEUS I
XEUS II
Focal plane instrument
(Wide field imager)
DEPFET
MPP Project Review

12. CFEL: 350 people UHH + DESY + MPG FLASH: 2007 Free Electron Lasers
MPP Project Review
CFEL: Center for free electron lasers
MPG: Advanced study group

13. Hard X-ray SASE Free Electron Lasers
LINAC COHERENT LIGHT SOURCE
LCLS
2010
SCSS
SPring-8 Compact SASE Source
European XFEL Facility
MPP Project Review

14. Detector Requirements
FLASH, LCLS + XFEL
pnCCD and DePFET system
single photon resolution
yes
energy range
0.05 < E < 24 (keV)
0.05 < E < 25 [keV]
pixel size (µm)
100
75 (200)
sig.rate/pixel/bunch
103 (105)
quantum efficiency
> 0.8
> 0.8 from 0.3 to 12 keV
number of pixels
512 x 512 (min.)
1024 x 1024 and 2048 x 2048
frame rate/repetition rate
10 Hz Hz
up to 250 Hz with pnCCD
XFEL burst mode
5 MHz (3.000 bunches)
> 5 MHz (3.000 bunches) with DePFET system
Readout noise
< 150 e- (rms)
< 10 e- (rms) (2 e- possible)
cooling
possible
- 20o C optimum
room temperature possible
vacuum compatibility
preprocessing
no (yes) ?
possible upon request
MPP Project Review

15. First light at LCLS CCD dimensions 7.8 x 3.7 cm2 = 29.6 cm2
1024 x 512 pixels
Pixel size: 75 x 75 µm2
derived from eRosita pnCCDs
MPP Project Review

16. MPP Projects LHC/sLHC Super B factory Astroparticle SiPM
Thin planar sensors &
3D interconnection
Super B factory
Astroparticle
MPP Project Review
SiPM
DEPFET active pixel sensors

17. Vertex Detectors in HEP
Vertex detectors should allow precision tracking in a hostile environment:
Good position resolution
Small structures
Large number of channels
Low mass
Close to the beam
Radiation damage
High occupancy
ALEPH 1994 n p
Hybrid Pixels sensors
Two layers: sensor & electronic
Fast, radiation hard
Much material, power, large pixels
Monolithic sensors
Integrate electronics and sensor
CMOS Sensors (MAPS)
DEPFETs
low mass => ideal for high precision detectors
slower than hybrid pixels
moderate radiation hardness
(ok for e+e-, not for pp)
hybrid
pixel p n
CMOS
MPP Project Review n n+ p
DEPFET

18. Future: 3D integration Evolution of hybrid pixels
high density, low mass interconnection of several (thin) layers (tiers)
‘quasi-monolithic detectors’
Could also overcome limitations of monolithic sensors
Si pixel sensor
CMOS analogue
CMOS digital
MPP Project Review
Increasing worldwide R&D effort:
3DIC at Fermilab, VIPS, WP in AIDA FP7 proposal (1.1M€ for 3D)

19. HLL special: thin sensors
At the HLL we follow both concepts
Hybrid pixels and 3D interconnection for sLHC
Monolithic detectors for ILC and Belle II
In all projects the we need to produce thin sensors!
Unique development in the HLL ?
-> talk by Laci Andricek
MPP Project Review
Process backside
Wafer bonding
thinning
Processing
etching

20. ATLAS: pixel detectors for sLHC upgrade
SCM pixels with homogenous p-spray .
Pixel module
micro-strip sensors
p-spray
moderated
Severe Radiation Damage:
Advantage of thin sensors:
Depletion voltage: Udep ~ d²
Leakage currents: Ileak ~ d
Trapping: CCE reduced if ltrap < d
However: Thin detectors have always a lower, signal, even un-irradiated
-> need good FEE
Use advanced interconnection technology for ASiCs (3D intergration)
Higher interconnection density
Backside connectivity
Material reduction
Optimal module layout
Production on FZ-SOI material
Detector thickness. 75 µm and 150 µm
p- and n-type material, p-spray insulation
MPP Project Review

21. Properties of Sensors (Strips)
Udep
Udep
After irradiation: (1015 n/cm²)
leakage currents as expected,
low depletion voltage (<350 V), below breakdown
high charge collection efficiency
Thin sensors have higher CCE than thick ones at same operation voltage
Next: test up to 1016 n/cm2
MPP Project Review

22. MPI 3D R&D Program
Build demonstrator using ATLAS pixel chip (FE-I2/3) and thin pixel sensors made by MPI (complete wafers with FEI2, FEI3 chips available!)
Interconnection with SLID and ICV technology by Fraunhofer IZM
R&D Issues:
Technology: compatible with sensors, ASICs?
Interconnection quality: e.g. capacitance
Yield & Costs.
Production in industry.
Material (copper layer).
MPP Project Review

23. Test interconnections (SLID)
Special test wafers for SLID tests
Chains of SLID connections
MPP Project Review

24. Next Steps Sensor/ASIC interconnection using SLID
ASIC thinned to 200 µm
No vias, integrated fan-out on sensor for service connection
-ASIC thinned to 50 µm
-vias for service connections (fan-outs for redundancy)
Future: SLID interconnection of sensors/ 3D FEI4
Prepare sensors matching FEI4 ASICs
Sensor/ASIC interconnection using SLID
ASIC thinned to 200 µm
No vias, integrated fanout on sensor for service connection
-ASIC thinned to 50 µm
-vias for service connections (fanouts for redundancy)
Future: SLID interconnection of sensors/ 3D FEI4
MPP Project Review

25. Detectors for e+e- colliders
ILC
Radiation damage not as bad as at LHC/sLHC but still an issue
Best position resolution needed
Thin, monolithic detectors: DEPFET
R&D started for ILC, review October 2007 at FERMILAB
MPP Project Review
Since 2008: Concentrate on superKEKB: boost R&D (ready in 2013)

26. Belle II: Requirements & Challenges
Low momentum particles:
Resolution dominated by multiple scattering
Low mass detector needed (<0.15%X0)
Relaxed requirements on pixel size
(~ 50 µm)
DEPFETs can be made thin (50 µm)
Low power in sensitive area
=> No active cooling needed
Challenges:
Radiation damage: 1-2 MRad/year expected
Occupancy: 0.4/hits/µm²/s
=> High readout speed (80ns/row, kHz frame rate)
MPP Project Review

27. Belle II Inner Detector
7.6 cm
11.7 cm
Small Detector:
20 Modules (one sensor each)
Radii still subject to optimisation
(1.3 cm and 2.2 cm for nano-beam)
Total detector: 5 Mpixel
@ r=1.3cm
250x1000 pixel
50 µm x 75 µm
@ r=2.2cm
50 µm x 117 µm or
250x2000 pixel
50 µm x 59 µm
MPP Project Review
SVD: 4 layers of double sided silicon strip sensors
PIX: 2 layers of DEPFET pixel detectors

28. Test Beam TB 2009 TB 2008 TB 2008 Successful program for several years
News in 2009 (2 weeks at CERN):
New readout board (S3B)
New switcher chips
Larger sensors; 64x256
Compact power supplies
Plug & Play!
MPP Project Review

29. Radiation Damage Gate oxide DEPFET based on a MOS structure
problem with ionising radiation:
Creation of fixed (positive) charges in the oxide layer and at the interface
Attracts electrons at the Si/SiO2 interface
Need more negative gate voltages to compensate
=> Shift of transistor threshold
Gate oxide
Solution: thin oxides
MPP Project Review

30. DEPFET Prototype Production
Sensor Production has started at MPI semiconductor lab (to be finished 2010)
SOI material: 50 µm sensor wafer
6 wafers (+ 2 monitor wafers on standard material)
Small test sensors to sample different pixel sizes from 50 µm to 200 µm
Design variations (improve gq, clear behaviour, charge collection uniformity)
Large ½ module sensors for prototyping
Technology variations (thin oxide, plasma etching)
Plasma etching of polysilicon
Improve uniformity (yield)
Smaller structures
MPP Project Review

31. Silicon Photomultiplier – SiPM
An array of avalanche photodiodes operated in Geiger mode
passive quenching by integrated resistor
read out in parallel  signal is sum of all fired cells
Problem:
Resistors made in polysilicon
Process is expensive and
unreliable
MPP Project Review
Jelena Ninkovic
IEEE NSS/MIC 2009 Orlando, Florida 31

32. Bulk Resistors (SiMPl)
Components of a SIPM cell
SiMPI(E) approach -
No need of polysilicon
Unobstructed entrance window (no resistors, Al-contacts) for high fill factor
Simple technology, easy and cheap production
Need to match wafer thickness, bulk resistivity and pixel size
Need for SOI or epi material
Only small variation of the pixel size on one wafer
MPP Project Review

33. Prototype production >130 different chips 30x30 arrays 10x10 arrays
6mm
30x30 arrays
10x10 arrays
MPP Project Review
Jelena Ninkovic
IEEE NSS/MIC 2009 Orlando, Florida 33

34. Prototype Results 1st iteration 2008:
Edge breakdown, proof of principle
2nd iteration 2009:
Working as expected
Photon spectrum
Gain linearity
MPP Project Review
Jelena Ninkovic
IEEE NSS/MIC 2009 Orlando, Florida 34

35. Normal operation up to 4.5V overbias @227K
Problems: dark rate
Due to the bad quality of the high field processing for 4V overbias (5MHz/mm²)
10x10array of 135mm 227K
Normal operation up to 4.5V
-> Improve processing (new furnaces!)
-> Transfer to industry for cheap mass production
(Max-Planck Innovation contacted)
MPP Project Review
Jelena Ninkovic
IEEE NSS/MIC 2009 Orlando, Florida 35

36. Conclusions HLL steadily increasing
New customer: CFEL (organized via MPE) for Free Electron Lasers
MPP Projects
ATLAS sLHC: thin Si-sensors work (better) as expected
thin planar sensors are a candidate for IBL and upgrade
3D interconnection progressing
Belle II Prototype Detectors in production
=> first production of thin DEPFET sensors
Issues to settle for final production:
thin oxides for radiation hardness
plasma etching (technology improvement)
SiPMs SiMPI devices function!
next iteration: reduce dark counts
find partner in industry for mass production
MPP Project Review

37. Operation Costs Operation costs (MPP): ~50 k€/month
MPP Project Review
Operation costs (MPP): ~50 k€/month
Almost constant from

38. Next Generation: non linear DEPFET
source
drain
gate
Internal gate
Drain current
time
The internal gate extends into the region below the source
Small signals assemble below the channel, being fully effective in steering the transistor current
Large signals spill over into the region below the source. They are less effective in steering the transistor current.
Charge into internal gate
A constant charge is injected at fixed time intervals and the internal gate regions are progressively filled
In the experiment the charge is deposited at once but the DEPFET response is the same
MPP Project Review
time 38