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ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI

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Presentation on theme: "ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI"— Presentation transcript:

1 ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI
Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department Rutherford Appleton Laboratory ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI

2 From ISIS MCR Beam News 3-NOV :04 A burnt out valve base has been found on system 4 RF. We are in the process of changing it. Further update at 03:00 Hrs. 17-NOV :30 The beam tripped due to Modulator 3 tripping off. Whilst attempting to bring RF back on a large breakdown was heard in the feedline / 116 Valve area. We have investigated the problem and found a significant water leak. Experts are in attendance to rectify the problem. Update at Hours.

3 What is RF? RF = Radio frequency Used as shorthand for Alternating voltages at radio frequencies Alternating currents at radio frequencies Electromagnetic waves at radio frequencies Power carried in electromagnetic waves Apparatus generating RF power ...

4 What are radio frequencies? Long waves ~200 kHz Medium waves ~1 MHz
Short waves ~3 – 30 MHz VHF radio ~100 MHz TV ~500 MHz Mobile phones ~1000 – 2000 MHz Satellite TV ~10000 MHz Accelerators ~1 MHz – MHz

5 Wavelengths and frequencies? c = l f
Velocity = wavelength × frequency Velocity of light = 3×108 metres/second = 186,000 miles/second = 670,000,000 miles/hour = 300 m/µs (300 m  twice around the synchrotron)

6 Frequencies Wavelengths
Long waves ~200 kHz ~1500 m Medium waves ~1 MHz ~300 m Short waves ~3 – 30 MHz ~10 – 100 m VHF radio ~100 MHz ~3 m TV ~500 MHz ~2 feet Mobile phones ~1000 – 2000 MHz ~6 – 12 inches Satellite TV ~10000 MHz ~1 inch Accelerators ~1 MHz – MHz 240 VAC mains 50 Hz ~4000 miles

7 Relative size matters

8 BBC Droitwich transmitter — Long wave Radio 4

9 Marconi’s transmitter, 1902 — Nova Scotia

10 Marconi’s spark transmitter, 1910

11 Steam engine and alternator

12 Two of four 5 kV DC generators

13 12 kV stand-by battery (6000 cells. 2 GJ stored energy. ) (cf
12 kV stand-by battery (6000 cells! 2 GJ stored energy!) (cf. RAL SC3: 5 J)

14 Marconi’s 1920 valve transmitter

15 Alternating voltages, currents, electric fields, magnetic fields, ...
Need to describe by three quantities Frequency, amplitude and phase E.g. three-phase AC mains: All phases “240 V” But different phases are very different! Phase varies along a wire carrying alternating current How much phase changes depends on wavelength and hence on frequency

16 Alternating voltage V(t) = A sin (2p f t + f)
Phase Alternating voltage V(t) = A sin (2p f t + f) f = 240° ° ° E.g. three-phase AC mains

17 50 Hz AC mains in house House 4000 miles

18 200 MHz RF in ISIS linac Positive 2½ feet Negative 5 feet

19 Why is RF used at all in accelerators?
Cathode ray tube in TV set doesn’t need RF

20 Particles accelerated using electric field
For 100 keV can use 100 kV DC power supply unit. Even 665 kV for old Cockcroft-Walton But 800,000,000 V DC power supply unit for accelerating protons in ISIS not possible Instead, for high energies, use RF fields, and pass particles repeatedly through these fields RF fields produce bunched beams DC RF ns – µs spacing

21 Sound waves set up inside milk bottle
Air RF Sound waves set up inside milk bottle Electromagnetic waves set up inside hollow metal cylinder

22 RF

23 RF + – – – – –

24

25 – – – – –

26

27 Interior of linac tank

28 How much RF power? All beam power from RF
ISIS mean current 200 µA Linac 70 MeV MeV × 200 µA = 14 kW Synchrotron 800 MeV 800 MeV × 200 µA = 160 kW So need >14 kW RF for linac, >160 kW RF for synchrotron Linac pulsed, 2% duty factor kW ÷ 0.02 = 0.7 MW Synchrotron pulsed, 50% duty factor kW ÷ 0.50 = 0.3 MW

29 Two commercial 0.5 MW short wave radio transmitters

30 RF powers Big radio and TV transmitters 0.5 MW Mobile phone transmitters 30 W Mobile phones 1 W Sensitivity of mobile phones 10–10 W ISIS linac 3 × 2 MW + 1 × 1 MW ISIS synchrotron 6 × 150 kW + 4 × 75 kW

31 Where does RF power come from? Big amplifiers Usually purpose built
The basics: Accelerator Frequency source RF amplifier

32 ~1 W RF ~1 MW RF

33 Devices that amplify RF
Transistors ~100 watts maximum per transistor Couple lots together for kilowatts Valves / vacuum tubes Triodes, tetrodes Largest can deliver several megawatts (peak) Klystrons High powers, high gains Limited to frequencies >300 MHz IOTs (inductive output tubes) Often used in TV transmitters (esp. digital TV) Output limited to ~50 kW

34 Transistors usually junction transistors (NPN, PNP)
Essentially minority carrier device But RF transistors usually field effect transistors Majority carrier device

35 Field effect transistor

36 Typical RF MOSFET

37 Solid state RF amplifier: few watts in, 3 kW max out

38 3 kW max. solid state amplifier mounted in rack

39 1 kW solid state driver RF amplifier for synchrotron

40 Valves / vacuum tube made in 1915

41 + – Basic triode circuit Load Anode power supply Anode Electrons Grid
Cathode Heater Basic triode circuit

42 Valve-based audio hi-fi amplifiers

43 Debuncher amplifier: commercial TV transmitter

44 Linac triode 5 MW peak 75 kW mean Synchrotron tetrode 1000 kW peak 350 kW mean

45 Typical valve parameters at ISIS
TH Type Triode Tetrode Heater 20 V, 500 A 4 V, 1600 A Anode volts 35 kV 16 kV Anode current 175 A 8 A Peak power o/p 2 MW 75 kW Mean power o/p 40 kW 40 kW Cooling water 100 l/min 200 l/min

46 Resonant circuits Parallel LC-circuit Impedance Z “infinite” at f = f0 (2f0)² = 1 / LC L C Shorted line Impedance Z “infinite” at l = /4, 3/4, 5/4, ... Only ratio of diameters matters length l

47 Essence of a tuned RF amplifier — 1
HT (+ve) Output Tetrode Anode Screen grid Control grid Cathode Heater Input Essence of a tuned RF amplifier — 1

48 Essence of a tuned RF amplifier — 2
HT (+ve) Output Tetrode Anode Screen grid Control grid Cathode Heater Input Essence of a tuned RF amplifier — 2

49 ISIS RFQ 200 kW tetrode driver
Input (grid) tuned circuit Tetrode Output (anode) tuned circuit ISIS RFQ 200 kW tetrode driver

50 Klystron gain ~50 dB (× 105 power gain) E.g. 10 W in, 1 MW out IOT gain ~25 dB (× 300 power gain) E.g. 200 W in, 60 kW out

51 Toshiba E3740A 3 MW 324 MHz klystron
5 metres, 3 tons Toshiba E3740A 3 MW 324 MHz klystron

52 Skin depth RF currents flow in surface of conductor only Skin depth d µ 1 / Ö (frequency) (exponential) In copper, d = 7 / Ö (frequency) (cm) 50 Hz 1 cm 1 MHz 70 µm 200 MHz 5 µm In sea water 50 Hz ~100 feet ELF / submarines 10 kHz ~10 feet VLF / submarines

53 ISIS RFQ — vessel copper-plated stainless steel

54 Different currents on different surfaces of same piece of metal
Linac high power RF amplifier

55 No external electric field
Dielectric material No external electric field Atoms – – – – Electric field

56 Dielectric material Dielectric constant Ceramic 6 Nylon 3 Perspex 3½ Polystyrene 2½ Water 80 Loss tangent — leads to dielectric heating Ceramic 0.001 Nylon 0.02 Perspex 0.01 Polystyrene Water — microwave ovens

57 Accelerating cavity Beam Vacuum Air Air Vacuum RF amplifier RF Window

58 RF feed to linac tank

59 Window and aperture

60 Good and failed RF windows

61 Servo systems on amplitude, phase and cavity tuning
Cavity n RF amp. chain Phase comp. Motor drive Volt. comp. Phase comp. Tuner V ref. accel. field Low level RF beam Servo systems on amplitude, phase and cavity tuning Linac RF block diagram

62 Three amplifiers in previous slide

63 Synchrotron high power RF systems

64 Synchrotron low-level RF systems block diagram
Frequency sweeper Beam compensation loop Voltage loop Cavity tuning Phase loop Synchrotron low-level RF systems block diagram

65 Driver amplifier

66 Cavity and high power RF driver

67 High power RF drive

68 ISIS depends almost entirely on RF
Earth ↓ DC % 35 keV ↓ RF 665 keV ↓ RF % 70 MeV 800 MeV

69

70 Supplementary detail RF transistors — hand-waving Electron and hole mobilities in Si ~1000 (cm/s)/(V/cm) Breakdown field strength in Si is ~300 kV/cm So maximum speed of electron or hole in Si is ~3×10^8 cm/s = 0.01 c In big transistor say characteristic size = 1 cm So electron or hole would take ~3 ns to travel across/through transistor RF period must be >> 3 ns, say 10 ns, thereby limiting RF frequency to 100 MHz If make transistor bigger to dissipate more heat, then more and more limited in frequency


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