1. Sensors for Gigatracker Meeting with Fondazione Bruno Kessler (ITC/IRST)

2. Sensors Pixel dimension 300 x 300 μm2 Standard p-in-n sensors
Size of the sensor for the NA62-prototype depends on the chip design.
For example:
2 x 5 mm2 ~100 pixel cells
3 x 25 mm2 ~700 pixel cells
Sensors for the NA62-prototype foreseen in the final mask
Layout of the sensor wafer still needed (summer 2008)
First batch of wafers (~25 pieces) will/must be available in time for the flip-chip bonding early 2009.

3. General Conditions Layout of the sensor wafer Timescale:
Sensor 4” wafers
Thickness of the wafer
Are 150 μm possible?
Will flatness be an issue?
One or two final detectors per wafer?
Position of the bump bond pads
Test possibility for I-V
Sensors for the GTK prototype
Prototype-like sensors surrounding the large sensor
How many different sensors for the GTK prototype? – min.2 (Torino, CERN proto-RO-chip)
Bump pad diameter 30 – 75 μm
depending on flip-chip option – stud or Pb/Sn-bumps
Timescale:
Layout this summer first sensors needed for the prototype beginning 2009
Costs estimate ?

4. An idea of the sensor wafer layout:
General GTK layout:
An idea of the sensor wafer layout:
4” wafer
Single Assemblies
12x13.5 mm2
Final detector
60x27 mm2
Si sensor 200µm
Bump bonds ~25µm
(a)
Readout chips 100µm
Si sensor 200µm
Prototype sensors
2x5 mm2 or 3x5 mm2

5. Introduction to the round table discussion
Expected radiation levels: ~2x1014 1MeV neq/cm2 per year (assuming 100 days run period)
Expected Detector Current
Summary of GTK Operating Conditions
Diode
Fluence
[1MeV neq/cm2]
Running days
5°C [μA]
20°C [μA] A1
2 x 1014
100
330
3900
B15
1 × 1014 50
270
3100
B12
5 × 1012
2.5 13
160
B11
3 × 1012
1.5 7 90
Sensor thickness
200 µm or less
Pixel size
300 µm x 300µm (elongated pixels on chip borders)
Sensor size
27 mm x 60 mm
Readout chips
13.5 mm x 12 mm (active area)
Module
1 sensor and 10 readout chips
Vop
Vfd > +200V
Environment
vacuum
Requested operation time
100 days
Operating temperature
5°C