1. Modeling of Quantum Noise with Electron-Phonon Interactions
Objective:
Noise modeling for nanoscale devices with electron-phonon interactions
Development of NEGF-based numerical simulators
Approach:
Model random motion of electrons due to various noise sources such as
Contact injection
Random transmission
Electron-phonon interactions
Silicon nanowire transistors with diameter 4 nm, length 30 nm
Impact:
Suggested a general approach to the quantum noise calculations
Shot noise phenomena are investigated.
Electron density, transfer function, and noise contribution spectrums (left)
Drain current noise characteristics in the weak-inversion and strong-inversion regimes (right)
Result:
Pauli’s exclusion principle and the long-range Coulomb interactions suppress shot noise in the strong inversion regime.