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WP 3: Applications of Cavity Soliton Lasers

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Presentation on theme: "WP 3: Applications of Cavity Soliton Lasers"— Presentation transcript:

1 WP 3: Applications of Cavity Soliton Lasers
WP managers: T. Ackemann1, R. Jäger2 1Department of Physics, University of Strathclyde, Glasgow, Scotland, UK 2ULM Photonics, Lise-Meitner-Str. 13, Ulm, Germany Industrial Advisers Annual Meeting

2 Motivation Task 2: High frequency carrier pulses trains on demand
Task 1: All-optical delay line Task 2: High frequency carrier pulses trains on demand What is the best „bang“ you get from a cavity soliton ? Enabling conceptional new approaches Impact !

3 Cavity solitons versus „pixels“
broad-area laser with CS array of micro-fabricated bistable elements bistable memory switch  translational degree of freedom easily excited discrete continuous self-luminous 2D displays; memory or pattern recognition systems; massively parallel and reconfigurable all-optical packet switching and routing schemes; optical delay lines; shift registers and beam fanning. To all these schemes one can add the possibility of high-frequency self-pulsing in the case of a pulsed CSL. control position and motion by small external perturbations reconfigurable  „plasticity“ in particular: gradients  drift

4 All-optical delay line
parameter gradient read out at other side inject train of solitons here time delayed version of input train all-optical delay line buffer register completely different approach to slow light for free: serial to parallel conversion and beam fanning note: won‘t work for non-solitons / diffractive beams G. Harkness 1998 (USTRAT)

5 Experimental realization
sodium vapor driven in vicinity of D1-line with single feedback mirror B Na adressing beam holding beam AOM tilt of mirror  soliton drifts t = 0 ms t = 80 ms t = 64 ms t = 48 ms t = 32 ms t = 16 ms ignition of soliton by addressing beam proof of principle, quite slow, but in a semiconductor microresonator this is different ! Schäpers et. al., PRL 85, 748 (2000), Proc. SPIE 4271, 130 (2001); AG Lange, WWU Münster

6 Status in semiconductor microresonators
driven VCSEL (vertical-cavity regenerative amplifier) add additional broad-area holding beam at an angle  fringes change angle  fringes move and change periodicity demonstrates clearly that CS react on external perturbations dragged along if period  soliton width strong influence of small-scale inhomogeneities X. Hachair, S. Barland, M. Giudici, J. Tredicce, INLN, unpublished

7 Drifting !? good news: it drifts !
small-scale irregularities  CS do not exist at all positions ignite CS at unfavorable position  it moves away CS can be dragged back to initial by addressing beam  steering good news: it drifts ! however uncontrolled and not very far steering of CS  soliton force microscope technique 18 µm in 38 ns  470 m/s = 1700 km/h map relative – possibly absolute – gradients in transverse plane by measuring the displacement between CS and a (small-amplitude) steering beam X. Hachair et al., PRA 69 (2004) (INLN, INFM)

8 probably related to speed of medium response
Drift velocity but: plenty of room at the top limits ? probably related to speed of medium response unit velocity 5103 µm/ns (k=300109/s, l=1 µm, n=3.5) velocity of CS: 5 µm/ns = 5000 m/s assume diameter of CS of 10 µm transit time 2 ns some 100 Mbit/s strength of gradient Maggipinto et al., Phys. Rev. E 62, 8726, 2000 (USTRAT and INFM Bari)

9 „Slow media“: Non-instantaneous Kerr cavity
g  0.01  semiconductor velocity determined by response time of medium saturation for instantaneous medium  faster medium will speed up response ! limits for increasing gradients need to be accessed by numerical simulation log (velocity / gradiant) slope 1 log (g) A. Scroggie, USTRAT, unpublished (1D, perturbation analysis)

10 Pinning of drift motion
motion of CS might be affected – in extreme case pinned – by modulations or localized inhomogenities study motion of CS on noisy backgrounds position along device  dashed line: perturbation solid line: speed of CS soliton averages over scales < CS width A. Scroggie, unpublished (USTRAT)

11 Work plan Year 1: experiment: driven VCSELs below threshold new devices with increased homogeneity of cavity resonance soliton force microscopy techniques  map inhomogeneities by dragging soliton around theory: investigate principal limits in model systems analyze concrete experimental situation inverse problem for soliton force microscopy Year 2: optimization of device and delay line homogeneity, determination of characteristics, investigation of capacity and speed limits theoretical analysis of delay line based on CSL emerging from WP1, especially on the possibility of using spontaneously drifting laser CS Year 3: experimental study of characteristics of laser CS based delay line supported by theoretical analysis and device improvements by material groups

12 Task 2:High-frequency carrier pulses trains on demand
pulse trains with a high repetition rate are needed in optical communications time-division multiplexing (TDM) demultiplexing regeneration routing self-pulsing CSL, ideally a mode-locked CSL array of self-pulsing laser sources  carrier pulse trains with high repetition rate in a large number of output channels all-optical control  „high-frequency carrier pulse train on demand“ e.g. Stubkjaer, IEEE Sel. Top. QE 6, 1428 (2000)

13 Anticipated scheme control beams de-multiplexing optical regeneration
routing time scales  packet manipulation advanced schemes might use plasticity of CLB  processing, direct routing self-pulsing CSL

14 Work plan Year 2 (starting around month 18):
theoretical analysis of switching procedures for self-pulsing CSL in simple models how to control: coherent or incoherent switching, amplitude, duration, timing adaptation and improvement of high-frequency detection schemes and of short pulse lasers for addressing beams decision which pulsed CSL from WP2 is pursued Year 3: study of switching characteristics of self-pulsing CS in close collaboration and iteration between theory, experiment and fabrication aim: at least two channels

15 Summary Task 1: All-optical delay line
immediate start (actually ongoing) depends heavily on device quality side benefit: lots of information on device homogeneity (soliton force microscope) conceptionally very different approach to slow light Task 2: High-frequency carrier pulses trains on demand relies on success of WP2 achievable degree of control unclear potentially very rewarding

16 Comparison to other systems
slow light in the vicinity of resonances: electro-magnetically induced transparency, linear cavities, photonic crystals interplay of useful bandwidth and achievable delay system speed length delay bandwidth EIT in cold vapor1 6 17 m/s 230 µm ~ 10 µs 300 kHz 2.1 EIT in SC QD1 4 (calc) m/s 1 cm 8 ns 10 GHz 81 SC QW (PO) 5 9600 m/s 0.2 µm 0.02 ns 2 GHz 0.04 SBS in fiber3 70500 km/s 2 m 18.6 ns 30-50 MHz > 1 Raman in fiber2 2 km 0.16 ns > tens of GHz > 8 CS (calc, more ambitious) 10000 m/s 250 µm 25 ns 5 GHz 125 CS (calc, conservative) 5000 m/s 100 µm 20 ns 0.25 GHz 5 1Tucker et al., Electron. Lett. 41, 208 (2005); 2Dahan, OptExp 13, 6234(2005); 3GonsalezHerraez, APL (2005); 4ChangHasnain Proc IEE (2003); 5Ku et al., Opt Lett 29, 2291(2004); 5Hau et al., Nature 397, 594 (1999)

17 Transition between locking and drift
example: single-mirror feedback system with Na as nonlinear medium locking of hexagonal patterns (not solitons !) at large-scale envelope produced by pump profile transition discontinous possibly we are close in semiconductors !? Seipenbusch et. al., PRA 56, R4401 (1997); AG Lange, WWU Münster

18 Relevance of modulated backgrounds
a) advantageous improve accuracy and robustness of optical memories in general modulations of the pump or the refractive index can be used It is generally believed that cavity solitons get stuck at the maxima of the background modulation. b) limiting provides pinning mechanism for drifting CS

19 CS in reverse gear We have predicted and measured the CS-velocity v(K) induced by the phase modulation when changing its wave-vector K for fixed m v(K) REVERSED MOTION K Reversed motion In these points CS are stationary EVERYWHERE in spite of background modulations K E A. Scroggie et al., Phys. Rev. E 71, (2005)

20 Application: pixel array
solution: pinning of spatial solitons due to intentionally introduced inhomogeneities, e.g. periodic phase (and amplitude) modulations (Firth + Scroggie, PRL 76 (1996) 1623; Spinelli et al., PRA 58 (1998) 2542) ‘optical’ pinning reconfigurable  advantage compared to micromachined pixels introduce square aperture in input beam  diffractive ripples  input beam pinning of positions of LS by amplitude modulations  defined positions, diffusive movement due to noise suppressed  pixel array, however not all cells are bistable at the same time (residual inhomogeneities) Schäpers et. al., PRL 85, 748 (2000), Proc. SPIE 4271, 130 (2001); AG Lange, WWU Münster


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