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Solid-State Devices & Circuits
ECE 442 Solid-State Devices & Circuits 9. BJT Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois
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Small-Signal Model What is a small-signal incremental model?
Equivalent circuit that only accounts for signal level fluctuations about the DC bias operating points Fluctuations are assumed to be small enough so as not to drive the devices out of the proper range of operation Assumed to be linear Derives from superposition principle
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Hybrid-p Incremental Model for BJTs
rp: input resistance looking into the base rx: parasitic series resistance looking into base – ohmic base resistance gm: BJT transconductance ro=rce: output collector resistance related to the Early effect
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Hybrid-p Parameters Can show that
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Common Emitter Configuration
The emitter current IE can be approximated as: An incremental conductance ge can be defined as From which we get: Emitter resistance
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Common Emitter (CE) Amplifier
Bias: Choose R1 & R2 to set VBVE is then set. Choose RE to set IE~IC. Quiescent point of Vout will be determined by RC. Emitter is an AC short.
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Incremental Model for CE Amplifier
Hybrid-p model (ignoring rx)
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CE Amplifier gain from base to collector
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CE Amplifier Open-circuit voltage gain:
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CE Amplifier Output Impedance
It can be seen that if Rsig >> rp, the gain will be highly dependent on b. This is not good because of b variations
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CE with External Resistors
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CE with External Resistors
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CE with External Resistors
RE and RB degrade the gain
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CE with External Resistors
The gain can be written as:
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Example Given VBEON=0.6V, find the gain for the circuit shown
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Example (Cont’) AC analysis: RE2 is shorted and RE=RE1=100W. Since b is not known, use:
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Emitter Follower circuit Incremental model
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Emitter Follower Emitter follower has unity voltage gain
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Emitter Follower – Input Impedance
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Emitter Follower – Output Impedance
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Output Impedance (cont’)
If we neglect RB
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Common Base Configuration
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Common Base Configuration
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BJT Topologies - Summary
CE CB EF 1 Avo Rin Rout
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