1. R&D status of CCD based vertex detector for JLC
Tsukasa Aso
Toyama National College of Maritime Technology
G.Iwai, K.Fujiwara, H.Takayama, N.Tamura
Niigata University
Y.Sugimoto, A.Miyamoto
KEK
K.Abe
Tohoku Gakuin Univ.
JLC-VTX　Group
Presented on LCWS2002, Aug Jeju Island KOREA

2. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Contents
Objective
CCD Structures
Charge Carrier Multiplier CCD
Fast R/O System
Extension of Detector Simulator
Radiation Damage Tests (Proposal)
Summary
Presented on LCWS2002, Aug Jeju Island KOREA

3. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Objective
Charge Coupled Device　(CCD)
2-dimensional reconstruction
Small pixel size – Large Chip size
Usually operated at very low temperature, -180C
Our Study
CCD operation at near room temperature
Light Cooling system - Easy operation
Thermal distortion of wafers
Remove materials - minimize the effect of MCS
Issues!! (Achieve sufficient S/N )
Deterioration due to the Radiation damage
How to minimize the effect of radiation damage and keep clean signals
Presented on LCWS2002, Aug Jeju Island KOREA

4. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Approach
Study items
Various type of CCD structures
Specification versus S/N, CTI, etc.
Noise proportional to dark charge => MPP Operation suppressed dark charge.
CTI reduces the signal charge => Clock pattern, Notch.
Fast readout systems
Reduction of dark charge with short R/O time
CTI improvements with shorter dwell time
Study of radiation damage
Background estimation on simulations
Experimental tests
Presented on LCWS2002, Aug Jeju Island KOREA

5. CCD Structure (MPP Operation]
HPK S5466
2-phase
3um-wide notch
HPK S5466
2-phase
EEV 02-06
3-phase
Presented on LCWS2002, Aug Jeju Island KOREA

6. CCD Structure (cont’d]
CTI properties
S/N > 10
@278K
CTI
CTI is propotional to
N_t/n_s,
Where
N_t : Defect concentration
N_s: Signal concentration
3Phase
2Phase
Std
Intrinsic Resolution
Is better than
3 um.
Notch
VCTI ( Irradiation)
Presented on LCWS2002, Aug Jeju Island KOREA

7. CCD Structure [cont’d]
Radiation Hardness
Electrons from Sr90
Neutrons from Cf252
Dark current (electrons/pix)
Limit > 1.5E+11e/cm2
JLC:
Vee (V)
Vee (V)
Limit > 1.5E+10 n/cm2
JLC: 1E+9/cm2/Yr (?) (Back scattering from QC1)
Presented on LCWS2002, Aug Jeju Island KOREA

8. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
CCM CCD (1)
CCM (Charge carrier multiplier)
Multiply generated charge using Impact ionization
Multiplying generated charge directly in the charge domain before conversion into a voltage
High-field region between the two neighboring gates
Gained energy is dissipated through Impact Ionization (II)
Small variance in the II
Impact Ionization
Integrated charge
High-Field
Multiplication
Presented on LCWS2002, Aug Jeju Island KOREA

9. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
CCM CCD(2)
Advantage
Amp. Gain
both of signal and floor noise
are multiplied.
CCM before charge detection amp.
Only the signal is multiplied.
Floor noise
Floor noise
Since It is difficult to reduce the noise floor of existing charge detection amplifiers particularly at high clocking frequency, It it beneficial to multiply signal charge before its conversion into a voltage.
Since the radiation damage makes signal charge smaller by increasing of CTI, S/N become worse. We expect that CCM may keep signal larger enough after irradiation
Presented on LCWS2002, Aug Jeju Island KOREA

10. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
CCM CCD(3) –IMPACTRON-
IMPACTRON
Texas Instruments
TC253SPD
658(H)x496(V)A pix. In Image Sensing Area
7.4um Square Pixels
Charge multiplication gain 1~30(TYP)~100
Charge conversion gain w/o CCM 10uV/e
690
496 4
500
CCM (400pix)
Presented on LCWS2002, Aug Jeju Island KOREA
Charge Multiplication!!!

11. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
CCM CCD (4) –IMPACTRON-
(Preliminary)
We have just started to test TC253SPD.
Pedestal
R/O
250kpix/s
T = 4 sec.
Very very preliminary
-12dB
CMG 7V.
0 C
The study of IMPACTRON is now going on …….
Please wait for next conference. (Vertex2002)?
Presented on LCWS2002, Aug Jeju Island KOREA

12. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Fast　R/O　System(1)
Our goal of this development
Control/Operation of FADC
Memory for data accumulation
CCD
FADC
Digital
Board
Near detectors
S to P
Driver
Feature
Portable
Fast operation (Goal 40MHz)
Easy operation
Low cost
Timing
Card
(FPGA]
FADC
P to S
Base-Clock
Generator
CPCI (6U)
Other TCs
Programming to
FPGA, clock pattern.
Presented on LCWS2002, Aug Jeju Island KOREA

13. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Fast R/O System(２)
Evaluation board of Flush ADC
CCD Signal processor chip for Digital Camera 9x9mm2 chip size ~ $6/chip
AD9844A(Analog Devices Co.)
12bit 20MSPS ADC
20MSPS Correlated Double Sampler
6bit variable CDS Gain Amp.
Low power consumption(65mW/2.7V)
AD6644ST(Analog Devices Co.)
14bit 65MSPS ADC
High power consumption
Presented on LCWS2002, Aug Jeju Island KOREA

14. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Fast R/O System(3)
Current Status(Evaluation board)
AD9844A[FADC]
XC2V404CS144C(FPGA)
AD6644[FADC]
LVDS Input
Backside
Interface to
Digital board
(12 bit DBUS]
CCD SIGNAL
VIDEO SIGNAL
AD6644 input
Presented on LCWS2002, Aug Jeju Island KOREA

15. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Fast R/O System(4)
IMPACTRON Data Acquisition using AD9844A evaluation board.
Evaluation board
CPCI (9U)
Timing Generator
Tektronix DG2030
5MHz
XC2V404C5144C
FPGA
AD9544A
FADC
Digital Board
TTL to LVDS
40MHz
CCD Digital board
Signal (5MHz)
Base
clock
Preset Scaler
CCD
Driver
analog
board
R/O start
Presented on LCWS2002, Aug Jeju Island KOREA

16. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Digital board
Evaluation board for FADC
Presented on LCWS2002, Aug Jeju Island KOREA

17. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Fast R/O System(5)
CCD SIGNAL
DATACLK
SHP
5MSps
SHD
CCD SIGNAL
1 H Lines
At present,
the main contribution of noise
is the interference of input
operation clocks.
This will be recovered to use
PLL/DLL scheme in FPGA
Presented on LCWS2002, Aug Jeju Island KOREA

18. Extension of Detector simulator(1)
Developing a new detector simulator, Jupiter, based on Geant4.
Extension for background estimation
Background situation depends on the accelerator design
Accelerator design is often modified in design stage
Accelerator design also have to pay attention to the background situation of the detector
Needs feedback each other
Detector simulator with precise Accelerator components
Presented on LCWS2002, Aug Jeju Island KOREA

19. Extension of detector simulator(2)
Requirements
Magnet materials and fields
Position of magnet
Easy to replace configuration of
accelerator components
magnetic fields
Better to simulate beam transportation and connected to the beam delivery system
Presented on LCWS2002, Aug Jeju Island KOREA

20. Extension of detector simulator(3)
Talk will be presented on session J.
Detector Model d)
L* = 4.3m
3T (Solenoid)
Crossing +-3mrad
QC2
CDC IP
QC1
QC1
VTX
SD0
VTX
Presented on LCWS2002, Aug Jeju Island KOREA

21. Radiation test proposal(1)
Why is additional test of radiation damage needed?
Radiation damage
is thought to be
proportional to NIEL
The radiation damage
at JLC estimated to be
10 times bigger than
our study using Sr90.
Radiation damage by
high energy (>10MeV)
electrons should
be studied.
Non-Ionizing Energy Loss
Presented on LCWS2002, Aug Jeju Island KOREA

22. Radiation test proposal(2)
Experimental setup
Tohoku-Univ
Choice of Settings
Primary Beam Energy /60 MeV
Target radiation length /0.5 X0
B field High/Low Tesla mode
Electron
Beam
125 MeV
60 MeV
Bending Magnet
Pt X0
0.5X0
Presented on LCWS2002, Aug Jeju Island KOREA

23. Radiation test proposal(3)
Estimation on the simulation
CCD5
125MeV
High Tesla
Pt X0
60MeV
Low Tesla
Pt X0
CCD4
CCD3
CCD2
CCD1
CCD0 5 10 15 20
25 MeV/c 20 40 60
80 MeV/c
Momentum range of electron irradiation will cover about
8 MeV/c < p < MeV/c
Presented on LCWS2002, Aug Jeju Island KOREA

24. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Mode
P(GeV/c)
Eff.(%)
60MeV.
LowTesla
Pt 0.1 X0 9
7.1E-3
4E+8 11
9.4E-3
6E+8 14
13.0E-3
8E+8 17
16E-3
10E+8 20
20E-3
13E+8 23
22E-3
14E+8
125MeV.
HighTestla
Pt 0.5 X0 31
0.18
1E+10 40
0.23 51
0.28
2E+10 62
0.34 72
0.41
3E+10 82
0.46
Presented on LCWS2002, Aug Jeju Island KOREA

25. Presented on LCWS2002, Aug.26-31 Jeju Island KOREA
Summary
The current status of our studies for JLC CCD Vertex detector are presented.
The studies are concentrated on the radiation damage which is related to the background situation in JLC. These issues are studied by the both of experiment and simulations.
As well as the investigation of CCD properties, newly developed R/O system is designed and fabricated as a evaluation board.
Presented on LCWS2002, Aug Jeju Island KOREA