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… in an ordered potential (but with Coulomb interactions)

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Presentation on theme: "… in an ordered potential (but with Coulomb interactions)"— Presentation transcript:

1 … in an ordered potential (but with Coulomb interactions)
Electromagnetically exciting the Electron-Glass The case of microwaves radiation and ac fields …in a disordered potential … in an ordered potential (but with Coulomb interactions) …both… …frustration… interaction

2 The basic phenomena …slow relaxation…
…quench the sample from high T… Unless otherwise mentioned; T=4K all samples are 2D and in the hopping regime Beryllium In2O3-x

3 …another way to get it out of equilibrium... electromagnetic radiation
…zap it with light (AlGaAs LED, l=0.88mm …like changing gate voltage… …not all photons are born equal…

4 EC is set by the Coulomb interaction
Out-of-equilibrium High energy, random distribution, conductance = high Slow relaxation Lower energy, correlated distribution, conductance = lower higher energy, correlated distribution, conductance = high Fast relaxation Equilibrated

5 …or raise bath-temperature by DT…
…more ways to get it out of equilibrium... gate insulator sample …apply non-ohmic field F…(high voltage) …or raise bath-temperature by DT… …F and DT have qualitatively similar effect …

6 …origin of the MW-enhanced conductance?… is it heating??
gate insulator sample …the “memory-Dip (MD ) In2O3-x or InxO …MD shape may be used as a thermometer... DG is sub-linear with MW power P… DG is NOT-due to heating…

7 it’s “universal”… II I V R=V/I V II I G=I/V

8 …just non-Ohmicity controlled by:
… and it’s trivial …just non-Ohmicity controlled by:

9 … temperature dependence...
…but what about magnitude; how big should F be to account for DG/G ? (which may be of order 1)

10 eFx= akBT a=1 (Shklovskii) a=0.01-0.04 (experiment)
… what they don’t want you to know... P doped Si Non-Ohmic Conductivity of Barely Localized Electrons in Three Dimensions T. F. Rosenbaum*, K. Andres and G. A. Thomas Bell Laboratories, Murray Hill, NJ 07974 Solid State Communications, Vol.35, pp.663—666 r(T,F) a r(T)exp(eFL/kBT) Strongly-localized In203-x. films OBSERVATION OF ACTIVATIONLESS HOPPING CONDUCTIVITY IN STRONG ELECTRIC FIELDS O. Faran and Z. Ovadyahu Solid State Communications, Vol. 67, No. 8, pp , 1988 eFx= akBT a=1 (Shklovskii) a= (experiment) Doped-Ge (nuclear-transmutation)

11 …but if DG is indeed just a non-Ohmic effect due to the ac field, where is the associated slow relaxation? …apply non-ohmic field F…(high voltage) …or raise bath-temperature by DT…

12 … there is slow relaxation...
… but, it goes down with w...

13 … and is very small at the MW regime...

14 Hopping Conduction in the Presence of an Electromagnetic Wave
BY I. P. ZVYAGIN


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