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RD50 CCE measurements and annealing studies on proton irradiated p-type MCz diodes Herbert Hoedlmosera, Michael Molla, Michael Koehlerb, Henri Nordlundc.

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Presentation on theme: "RD50 CCE measurements and annealing studies on proton irradiated p-type MCz diodes Herbert Hoedlmosera, Michael Molla, Michael Koehlerb, Henri Nordlundc."— Presentation transcript:

1 RD50 CCE measurements and annealing studies on proton irradiated p-type MCz diodes Herbert Hoedlmosera, Michael Molla, Michael Koehlerb, Henri Nordlundc a: CERN, b: University Siegen, c: Helsinki Institute of Physics RD50 Workshop CERN, Contents CCE setup CCE Measurements on irradiated p-type MCz CV/IV characterization of irradiated p-type MCz Differences in reverse-annealing due to thermal donors RD50 Workshop 06: CERN Herbert Hoedlmoser

2 Investigated material
RD50 300 μm MCz by Okmetic Processing: ITC-IRST square MG diodes n+/p (batch SMART2) W066 – series: p-spray dose = 3 x 1012 cm-2 8 diodes with VDEP = 8 to 17 V W182 – series: p-spray dose = 5 x 1012 cm diodes with VDEP = 97 to 110 V After being processed together the two wavers were inhomogeneous: Differences in VDEP between the wavers and between different locations on the waver due to inhomogeneous TD generation according to talk by D. Menichelli, at the Hamburg-Workshop; Irradiation: 24 GeV/c CERN/PS up to Φ = 1016 cm-2 Die dimension: (5920 μm)2 Diode area (p+ implant): mm2 Metal hole area: mm2 (Φ 2.4 mm) 1 Large guard (~90 μm) + 10 float rings RD50 Workshop 06: CERN Herbert Hoedlmoser

3 CCE system NIKHEF CCE system © Fred Hartjes RD50
signal shaping time: 2.5 µs gain calibration factor: 245 e-/mV temperature: down to -30 oC with fridge + peltier bias: up to 1000 V guard ring: connected to ground noise: 567e e- /pF trigger rate with 90Sr source: ≈ Hz control software: labview RD50 Workshop 06: CERN Herbert Hoedlmoser

4 CCE: measurement & analysis
RD50 NIKHEF CCE analysis software automatic Landau fit and noise deconvolution pedestal events: < 2% separate pedestal measurement to deconvolute gaussian noise from signal RD50 Workshop 06: CERN Herbert Hoedlmoser

5 Measurements & Parameters
RD50 Measurements performed for the investigations CCE: measured at -10OC (-25OC for highly irradiated diodes) CV: measured at -10OC and at room temperature (RT) IV: measured at -10OC and at room temperature (RT) Annealing: at 80OC T-dependence of measurements! RD50 Workshop 06: CERN Herbert Hoedlmoser

6 CCE for irradiated detectors
RD50 irradiation: 24 GeV/c protons annealing: 4 80 oC RD50 Workshop 06: CERN Herbert Hoedlmoser

7 CCE as a function of fluence
RD50 irradiation: 24 GeV/c protons annealing: 4 80 oC RD50 Workshop 06: CERN Herbert Hoedlmoser

8 only depletion voltage changes, maximum CCE remains at 82%
Annealing: CCE RD50 IRST-W irradiation: Φ= 3.5×1014 p/cm2 only depletion voltage changes, maximum CCE remains at 82% RD50 Workshop 06: CERN Herbert Hoedlmoser

9 similar results for all fluences
Annealing: CCE RD50 IRST-W irradiation: Φ= 3.3×1013 p/cm2 IRST-W irradiation: Φ= 1.1×1014 p/cm2 IRST-W irradiation: Φ= 3.5×1014 p/cm2 IRST-W irradiation: Φ= 1.1×1015 p/cm2 similar results for all fluences RD50 Workshop 06: CERN Herbert Hoedlmoser

10 IV measurements @ room temperature
Leakage current RD50 IV room temperature Current related damage rate: α(1 MeV n eq.) = 4.9 x [A cm-1] irradiation: 24 GeV/c protons annealing: 4 80 oC RD50 Workshop 06: CERN Herbert Hoedlmoser

11 Annealing: leakage current
RD50 80OC; measurements at room temperature Measurement of the current related damage rate α as a function of annealing time: Comparison with parametrization of α: RD50 Workshop 06: CERN Herbert Hoedlmoser

12 Annealing: leakage current
RD50 Results for annealing of 3 different diodes: W Φ= 1.1×1014 p/cm2 W Φ= 1.1×1014 p/cm2 W Φ= 3.3×1013 p/cm2 Currents corrected to reference temperature! RD50 Workshop 06: CERN Herbert Hoedlmoser

13 VDEP as a function of fluence
RD50 CV room temperature irradiation: 24 GeV/c protons annealing: 4 80 oC RD50 Workshop 06: CERN Herbert Hoedlmoser

14 IRST-W066-22 irradiation: Φ= 3.5×1014 p/cm2
Annealing: VDEP RD50 IRST-W irradiation: Φ= 3.5×1014 p/cm2 Evaluation of: ΔNeff ≈ 6E12 cm-3 ≡ Ny,∞ reverse annealing amplitude RD50 Workshop 06: CERN Herbert Hoedlmoser

15 Annealing: VDEP RD50 Evaluation of change in effective doping concentration as a function of fluence reverse annealing amplitude Ny,∞ RD50 Workshop 06: CERN Herbert Hoedlmoser

16 Difference in annealing behavior due to TDs?
Difference between w066 and w182 series presumably due to TDs: Depletion voltage before irradiation ≈ 10 x higher for w182! Higher TD concentration Reverse annealing of W066 series (higher TD concentration) is delayed: RD50 Workshop 06: CERN Herbert Hoedlmoser

17 Difference in annealing behavior due to TDs?
Effect confirmed with independent evaluation of VDEP by CV and CCE VDEP by CCE VDEP by CV Reverse annealing of W066 series is delayed RD50 Workshop 06: CERN Herbert Hoedlmoser

18 Difference in annealing behavior due to TDs?
Effect confirmed for different fluences: reverse annealing of W066 series (higher TD conc.) is delayed RD50 Workshop 06: CERN Herbert Hoedlmoser

19 Difference in annealing behavior due to TDs?
Comparison of reverse-annealing time constants RD50 Workshop 06: CERN Herbert Hoedlmoser

20 Summary RD50 CCE/CV/IV measured for p-type MCz diodes irradiated up to fluences of GeV/c p/cm CCE(300V): 1.2E14 p/cm (7.4E13 1MeV/c n/cm2) 1.1E15 p/cm2 (6.8E14 1MeV/c n/cm2) Annealing of an irradiated diode changes depletion voltage and leakage current but not CCE TDs seem to influence reverse-annealing: higher TD concentration  delayed reverse-annealing? Plan: systematic study of this effect by deliberate activation of TDs in p-type MCz. RD50 Workshop 06: CERN Herbert Hoedlmoser

21 VDEP by CCE @ -10OC VDEP by CV @ RT
backup slide Evaluation VDEP RD50 VDEP by -10OC VDEP by RT W / Φ=1.15E14 p/cm2 evaluation by CCE usually leads to higher values of VDEP than CV: differences tue to T dependencies and slow CCE measurement RD50 Workshop 06: CERN Herbert Hoedlmoser

22 backup slide CCE: comparison to CV
RD50 1 = e- 1 = 1/(6.7 pF)2 W / Φ=1E14 p/cm2 ….considering the T-dependencies in the measurements of irradiated detectors! RD50 Workshop 06: CERN Herbert Hoedlmoser

23 backup slide CCE(fluence)
RD50 Material: standard p-type and oxygenated (DOFZ) p-type RD50 Workshop 06: CERN Herbert Hoedlmoser

24 Reverse annealing for different fluences:
backup slide Annealing: VDEP RD50 Reverse annealing for different fluences: RD50 Workshop 06: CERN Herbert Hoedlmoser

25 Annealing: leakage current
RD50 Correction of the measured currents for T-dependency: RD50 Workshop 06: CERN Herbert Hoedlmoser

26 backup slide CCE: measurement & analysis
RD50 Example: p-type MCz IRST-W irradiation: Φ= 3.5×1014 p/cm2 temperature: -10 oC annealing: oC bias: 200 V pedestal measurement deconvoluted landau distribution RD50 Workshop 06: CERN Herbert Hoedlmoser

27 Setup: NIKHEF CCE system © Fred Hartjes
RD50 RD50 Workshop 06: CERN Herbert Hoedlmoser

28 refrigerator “Environment” NIKHEF CCE system © Fred Hartjes CV/IV box
RD50 NIKHEF CCE system © Fred Hartjes CV/IV box refrigerator RD50 Workshop 06: CERN Herbert Hoedlmoser

29 Setup: detector mounting
RD50 …bonded to PCB support RD50 Workshop 06: CERN Herbert Hoedlmoser

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