1. Infineon CoolIR2DieTM Power Module
September Version 1 - Written by Elena Barbarini

2. Table of contents Glossary 1. Overview / Introduction 4
Executive Summary
SiC devices market
Reverse Costing Methodology
2. Company Profile
3. Physical Analysis
Synthesis of the Physical Analysis
Physical Analysis Metodology
3.1 Package analysis
View and dimensions and marking
Package Opening
Package Cross-Section
3.2 IGBT Analysis
Dimension
Details
Cross-section
3.3 Diode Analysis
MOSFET C3M D
MOSFET C3M D
4. Manufacturing Process Flow
Overview
Mosfet Process Flow
Mosfet Fabrication Units
Package Process Flow
5. Cost Analysis 54
Synthesis of the Cost Analysis
Main Steps of Economic Analysis
Yields Explanation
5.1 Cost Analysis IGBT
MOSFET Wafer Cost
Back-end Cost
MOSFET Die cost
5.3 Cost Analysis Diode
Module Cost
5.3 Cost Analysis Module
6. Estimated Manufacturer Price Analysis
Manufacturers ratios
Estimated manufacturer Price
Contact

3. Executive Summary
This full reverse costing study has been conducted to provide insight on technology data, manufacturing cost and selling price of the CooliR²Die™ power module from Infineon. The device is an IGBT module for automotive applications integrated into different vehicles and based on the second generation Chevrolet Volt Traction Power Inverter Module (TPIM).
The module integrates the latest packaging from International Rectifier, which is now part of Infineon, developed in the Delphi Viper project. Power module size and thermal dissipation are optimized thanks to the use of innovative materials including aluminum nitride (AlN) layers, directed bonded aluminum (DBA), and innovative gels and masks.
This package has no wire bonding, reducing the inductance, and no printed circuit board (PCB), which simplifies module assembly. Two DBA layers improve thermal management by allowing heat to flow out of two sides of the die. The new position of the die in the package also enhances thermal dissipation. Integrating a single IGBT and diode on a minimal footprint provides system design flexibility and lower overall cost.
This report analyses the module structure and packaging of the IGBT and diode dies in detail. Based on a complete teardown analysis, the report also provides an estimation of the production cost of the package, IGBT and diode.

4. CooliR²™ technology
IR/Infineon website

5. Module Overview
Module Overview
Cu Connectors
Module Overview

6. Module Opening Lower DBA Plastic protection Connectors
IGBT emplacement
Upper DBA
Solder mask
Diode emplacement
Module: Optical view

7. Module Cross-Section IGBT die : 180µm
Details of module: Cross-Section optical view
Details of module: Cross-Section optical view

8. PGDW: Potential Good Dies per Wafer
IGBT View & Dimensions
xx mm
xx mm
IGBT Die Area: XXX mm² (XX mm x XX mm)
Nb of PGDW per 8-inch wafer: XXX
IGBT Die Overview
PGDW: Potential Good Dies per Wafer

9. IGBT after Al etch – SEM View IGBT after Al etch – SEM View
Die Process
Die Overview
IGBT after Al etch – SEM View
Transistor pitch: xxx µm
IGBT after Al etch – SEM View

10. Gate : Cross-Section SEM view

11. Die Cross-Section – Optical View Die Cross-Section – SEM View
Diode Cross-Section
Die Cross-Section – Optical View
Die Cross-Section – SEM View

12. Global Overview Diode IGBT CoolIR Power Module
IGBT manufacturing 1 metal layer, trench, backside
Probe test
Dicing
Diode manufacturing 1 metal layer, backside
Probe test
Dicing
Assembly in package
Final test
Diode
IGBT
CoolIR Power Module

13. IGBT Process Flow – Back side
Si wafer
Backgrinding
N fieldstop implantation
P collector implantation
Si Wafer
Al/Ti/Ni-Ag deposition
Backgrinding and CMP on the backside
The backside steps are performed before the polyimide deposition
Backgrinding and CMP on the backside
Metal deposition on the backside :
- Ohmic contact in aluminum.
- A thin Ti layer to stop the metal diffusion
- A Ni-Ag layer in order to protect the back side from the corrosion and enhance the solder

14. IGBT Wafer Fabrication Unit
We consider Infineon as supplier of IGBT.
Infineon wafer fab units (Extracted from PowerPrice+)

15. IGBT Unprobed Wafer Cost

16. IGBT Die Cost

17. Diode Die Cost

18. Module Cost
The assembled module cost is estimated between $xx and $xx.
The dies cost (Silicon cost) accounts for about xxx%.
The DBA substrates cost accounts for xx% of the cost.
The added value cost is $xxxx (10%).

19. Estimated Manufacturer Price

20. Contact
Reverse costing analysis represents the best cost/price evaluation given the publically available data, and estimates completed by industry experts.
Given the hypothesis presented in this analysis, the major sources of correction would lead to a +/- 10% correction on the manufacturing cost (if all parameters are cumulated)
These results are open for discussion. We can reevaluate this circuit with your information. Please contact us: