1. Product Family Presentation: NVRAM Product Overview
Cypress Provides the Industry’s Fastest and Most Energy-Efficient Nonvolatile RAM Solutions
NVRAM Product Overview Product Family Presentation
Cover

2. NVRAM Product Overview Product Family Presentation
NVRAM1: Rapid Growth, Broad Markets
The global TAM2 forecast for Nonvolatile RAM (NVRAM) is $590M in with a 10% CAGR from 2014 through 2018
Cypress F-RAM™ and nvSRAM products serve many high-growth NVRAM applications, including:
Smart meters
Automotive electronics
Industrial controls and automation
Multifunction printers
Computing and networking
The mission-critical systems used in these high-growth markets require fast, high-endurance, highly reliable data capture on power loss
Customers prefer simple, energy-efficient system designs
Alternative Nonvolatile Memory4 solutions, such as EEPROM5 or Battery-Backed SRAM4, cannot meet these requirements
Mission-critical systems require NVRAMs with best-in-class write speed, endurance, reliability and energy efficiency
1 Nonvolatile Random Access Memory
2 Total available market
3 Web-Feet Research
4 Memory that retains its information on power loss
5 A common NVM that uses floating-gate technology to store data
6 SRAM connected to a battery to store data on power loss
NVRAM Product Overview Product Family Presentation
Market Vision

3. NVRAM Product Overview Product Family Presentation
Cypress Is the NVRAM Market Leader
Cypress offers the largest portfolio of serial and parallel NVRAM products
F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs
nvSRAM, the industry’s fastest parallel NVRAMs
Cypress offers the largest portfolio of the industry’s most energy-efficient and reliable F-RAM products
F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the Write Endurance1
F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V
Serial peripheral interface (SPI) and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages
F-RAM products offer optional real-time clocks and event counters
Cypress offers the largest portfolio of the industry’s fastest parallel nvSRAM products
25-ns access times are available with unlimited Write Endurance
Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltage
Asynchronous SRAM parallel and ONFI 1.0 interfaces come in FBGA, SOIC, SSOP and TSOP packages
Integrated real-time clocks are also available on nvSRAM products
Cypress:
Was the first to produce F-RAM and nvSRAM products
Has shipped more than 1 billion NVRAM units
Provides products that meet the most rigorous automotive and military standards
Assures long-term supply of F-RAM and nvSRAM products
Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data
1 The number of times a nonvolatile memory cell can be rewritten before it wears out
NVRAM Product Overview Product Family Presentation
Market Positioning

4. Cypress NVRAM Design Options
Choose a Cypress serial F-RAM for:
Industry standard SPI or I2C interfaces
Low-pin-count, small-footprint packages
Low power, instant data capture on power loss
High write endurance and long data retention
EEPROM replacement
Choose a Cypress parallel nvSRAM for:
Industry standard asynchronous SRAM parallel and ONFI 1.0-compatible interfaces
Access times as fast as 25 ns
Instant data capture on power loss
Unlimited SRAM write endurance
Battery-backed SRAM replacement
NVRAM Product Overview Product Family Presentation
Branch

5. NVRAM Product Overview Product Family Presentation
Cypress NVRAM
Serial F-RAM
NVRAM Product Overview Product Family Presentation
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6. Serial Nonvolatile Memory Terms
Nonvolatile Memory (NVM)
Memory that retains its information on power loss
Nonvolatile Random Access Memory (NVRAM)
An NVM that allows direct access to stored data in any random order
Ferroelectric Random Access Memory (F-RAM)
A fast-write, high-endurance, low-energy NVM that uses ferroelectric technology to store data
Electrically Erasable Programmable Read-Only Memory (EEPROM)
A common NVM that uses floating-gate technology to store data
Page Write
A write to a fixed-length contiguous block of memory
Soak Time
The approximate 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers
Write Endurance
The number of times an NVM cell can be rewritten before it wears out
Wear Leveling
A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached
AEC-Q100
A quality standard defined by the Automotive Electronics Council used to verify the reliability of ICs and qualify them for automotive applications
NVRAM Product Overview Product Family Presentation
ToA

7. Serial NVM Design Problems
1. Many electronic devices must reliably store system data in NVM on power loss
EEPROMs require a 5-ms continuation of active power per Page Write for Soak Time
Soak Time requires additional capacitors or batteries for a Page Write on power loss, which adds cost and reduces reliability
Mission-critical data may be subject to radiation and/or magnetic fields
2. Many data-logging applications exceed the 1 million write-cycle limitation of EEPROM
Wear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan
Wear Leveling requires up to 8x the memory capacity and additional software, which increases cost
3. Systems using EEPROM have increased system power consumption
For the 5 ms required for EEPROM Soak Time
For the processing required to do Wear Leveling
F-RAM solves these problems
Requires no Soak Time, eliminating the need for additional capacitors or batteries to complete a Page Write on power loss
Provides 100 trillion write cycles, eliminating the need for Wear Leveling
Consumes 2x to 5x less active power than EEPROM, thereby reducing system power
F-RAM cells are inherently gamma-radiation tolerant and are not corrupted by magnetic fields
Cypress F-RAM offers 100 million times the endurance of EEPROM at 30% of the power
NVRAM Product Overview Product Family Presentation
Design Problems

8. NVRAM Product Overview Product Family Presentation
Serial F-RAM Is a Better Solution
Simplify a conventional, complex, EEPROM-based design…
By choosing F-RAM as your serial Nonvolatile Memory solution…
To produce better solutions for multiple applications at a lower cost, especially
for mission-critical applications.
2 x 256Kb for a 64Kb System
8x EEPROM capacity for Wear Leveling
Automotive Electronics
Industrial Controls
Smart Meters
Multifunction Printers
Medical Devices
File System
Controller
Memory
Worn Cell
F-RAM pin-to-pin replacement
for EEPROM SOIC8
Wear Leveling software algorithm to increase
EEPROM Write Endurance
Additional capacitor to maintain power
for 5 ms per Page Write for Soak Time
NVRAM Product Overview Product Family Presentation
Solution

9. Cypress Serial NVRAM vs. Competition’s
Feature
F-RAM
EEPROM
SPI Speed
40 MHz
33 MHz
20 MHz
I2C Speed
3.4 MHz
1 MHz
Write Delay
0 ms
5 ms
Endurance (Cycles)
1014
1012
106
10-ms Write Frequency1
31,710 years
3,171 years
208 minutes
Active Write Current2
3 mA
6 mA
10 mA
Density Range
4Kb-2Mb
1Kb-1Mb
Nonvolatile Retention
100 years
10 years
1 Comparable write frequency limited by EEPROM’s Soak Time
2 Conditions: Max current, SPI, 10 MHz to 40 MHz, 2.7 to 3.3 V, -40°C to +85° C
NVRAM Product Overview Product Family Presentation
Competition

10. F-RAM Portfolio Low Power | High Endurance
SPI F-RAM
I2C F-RAM
Processor Companion
Wireless Memory
Parallel F-RAM
FM25H20/V20
2Mb; H20: V
V20: V
40 MHz SPI; Ind1
CY15B104Q
4Mb; V
40 MHz SPI; Ind1
Q115
FM25V10/VN10
1Mb; V
40 MHz SPI; Ind1, Auto A2
FM24V10/VN10
1Mb; V
3.4 MHz I2C; Ind1
FM22L16/LD16
4Mb; V
55 ns; x8; Ind1
512Kb-8Mb
FM25V05
512Kb; V
40 MHz SPI; Ind1, Auto A2
FM24V05
512Kb; V
3.4 MHz I2C; Ind1
FM28V102A
1Mb; V
60 ns; x16; Ind1
FM28V202A
2Mb; V
60 ns; x16; Ind1
FM25V02/W256
256Kb; V02: V
W256: V
40 MHz SPI; Ind1, Auto A2
FM24V02/W256
256Kb; V02: V
W256: V
3.4 MHz I2C; Ind1, Auto A2
FM33256
256Kb; 3.3V; 16 MHz SPI Ind1; RTC4; Power Fail
Watchdog; Counter
Wireless Memory
NDA Required
Contact Sales
FM28V020
256Kb; V
70 ns; x8; Ind1
FM18W08
256Kb; V
70 ns; x8; Ind1
FM25V01
128Kb; V
40 MHz SPI; Ind1, Auto A2
FM24V01
128Kb; V
3.4 MHz I2C; Ind1, Auto A2
FM31256/31(L)278
256Kb; 3.3, 5.0V; 1 MHz I2C; Ind1; RTC4; Power
Fail; Watchdog; Counter
FM1808B
256Kb; 5.0 V
70 ns; x8; Ind1
FM16W08
64Kb; V
70 ns; x8; Ind1
FM25640/CL64
64Kb; 3.3, 5.0 V
20 MHz SPI; Ind1, Auto E3
FM24C64/CL64
64Kb; 3.3, 5.0 V
1 MHz I2C; Ind1, Auto E3
FM3164/31(L)276
64Kb; 3.3, 5.0 V; 1 MHz I2C; Ind1; RTC4; Power
Fail; Watchdog; Counter
4Kb-256Kb
FM25C160/L16
16Kb; 3.3, 5.0 V
20 MHz SPI; Ind1, Auto E3
FM24C16/CL16
16Kb; 3.3, 5.0 V
1 MHz I2C; Ind1
FM25040/L04
4Kb; 3.3, 5.0 V
20 MHz SPI; Ind1, Auto E3
FM24C04/CL04
4Kb; 3.3, 5.0 V
1 MHz I2C; Ind1
1 Industrial grade: -40ºC to +85ºC
2 AEC-Q100: -40ºC to +85ºC
3 AEC-Q100: -40ºC to +125ºC
4 Real-time clock
Production
Development
QQYY
Availability
Sampling
Concept
Status
NVRAM Product Overview Product Family Presentation
Roadmap

11. Here’s How to Get Started
Vaulted: NVRAM Product Overview, , Rev *A
1. Select Cypress serial F-RAM products in the F-RAM Product Selector Table and click “Order” for free samples 2. Download the SPI Guide for F-RAM 3. Register to access online technical support:
Infotainment System by Hyundai
Automotive Safety System by Hyundai
Motor Control by SEW
Smart E-Meter
by Landis + Gyr
Multifunction Printer by Ricoh
Digital Hearing Aids by Oticon
NVRAM Product Overview Product Family Presentation
Getting Started

12. NVRAM Product Overview Product Family Presentation
Cypress NVRAM
Parallel nvSRAM
NVRAM Product Overview Product Family Presentation
Divider

13. Parallel Nonvolatile Memory Terms
Vaulted terms per ToA Library Spec , Rev *G
Nonvolatile Memory (NVM)
Memory that retains data on power loss
Nonvolatile Random Access Memory (NVRAM)
An NVM that allows direct access to stored data in any random order
Write Endurance
The number of times an NVM cell can be rewritten before it wears out
Silicon Oxide Nitride Oxide Silicon (SONOS)
A transistor with a polysilicon gate (S), an Oxide Nitride Oxide (ONO) gate dielectric and a Silicon substrate (S) used to create a Nonvolatile Memory storage cell
Nonvolatile Static Random Access Memory (nvSRAM)
Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss
Battery-Backed SRAM (BBSRAM)
SRAM connected to a battery to store data on power loss
Restriction of Hazardous Substances (RoHS)
A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components
Redundant Array of Independent Disks (RAID)
A storage technology that uses two or more disk drives for redundancy
NVRAM Product Overview Product Family Presentation
ToA

14. Parallel NVM Design Problems
Vaulted: NVRAM Product Overview, , Rev *A
1. Many systems require fast NVMs with high Write Endurance
Traditional EEPROM or Flash Nonvolatile Memories have slow write times (>1 ms) and limited Write Endurance
Low-power asynchronous SRAMs have 20-ns to 45-ns access times but require battery backup to store data on power loss
2. Batteries increase cost, add design complexity, and compromise reliability and RoHS compliance
Batteries, power-management circuits and firmware add cost and complexity, and reduce reliability
Coin cell batteries have a limited lifetime, which mandates periodic system maintenance and downtime
Data is lost if battery charge is drained before the system power is restored, which mandates fast time-to-repair
Batteries contain heavy metals and violate RoHS compliance
nvSRAM solves these problems
Provides 20-ns read/write SRAM access time with unlimited endurance
Requires no batteries to retain data on power loss for unlimited periods
Stores data reliably at power loss without the need for external power-management circuits and firmware
Complies with RoHS requirements
Cypress RoHS-compliant nvSRAMs are significantly faster than traditional NVMs, and more reliable and easier to implement than BBSRAM solutions
NVRAM Product Overview Product Family Presentation
Design Problems

15. NVRAM Product Overview Product Family Presentation
Parallel nvSRAM Is a Better Solution
Simplify a complex BBSRAM-based design…
By choosing nvSRAM as your parallel Nonvolatile Memory solution…
To produce more reliable solutions for mission-critical applications at a lower cost.
Standard SRAM memory
RAID Storage
Industrial Automation
Computing and Networking
Avionics and Defense
Electronic Gaming
Battery required to retain data on power loss
Battery-free parallel nvSRAM solution
Extra board area for battery
NVRAM Product Overview Product Family Presentation
Solution

16. Cypress Parallel NVRAM vs. Competition’s
Feature
nvSRAM
Asynchronous SRAM1 + Battery
MRAM
Access Time
20 ns
45 ns
35 ns
Write Delay
0 ms
Battery Requirement No
Yes
Endurance (Cycles)
Unlimited
Active Write Current2
75 mA
50 mA
180 mA
Density Range
256Kb-16Mb
64Kb-64Mb
RoHS Compliant
Nonvolatile Retention
20 years
N/A
Magnetic Damage Risk
1 Low-power 16Mb asynchronous SRAM
2 Conditions: Max current, x16, 45 ns (nvSRAM), 45 ns (asynchronous SRAM), 35 ns (MRAM), 2.7 to 3.6 V, −40° C to +85° C
NVRAM Product Overview Product Family Presentation
Competition

17. nvSRAM Portfolio High Density | High Speed
Parallel nvSRAM
SPI nvSRAM
I2C nvSRAM
Parallel nvSRAM
SPI nvSRAM
I2C nvSRAM
CY14V116F/G
16Mb; 3.0, 1.8 V I/O
30 ns; ONFI3 1.0
x8, x16; Ind1
Q414
CY14B116R/S
16Mb; 3.0 V
25, 45 ns; x32; Ind1
RTC2
Q414
Higher Densities
DDRx6 nvSRAM
NDA Required
Contact Sales
CY14B108K/L
8Mb; 3.0 V
25, 45 ns; x8; Ind1
RTC2
CY14B108M/N
8Mb; 3.0 V
25, 45 ns; x16; Ind1
RTC2
CY14B116K/L
16Mb; 3.0 V
25, 45 ns; x8; Ind1
RTC2
Q414
CY14B116M/N
16Mb; 3.0 V
25, 45 ns; x16; Ind1
RTC2
Q414
Higher Densities
QSPI5 nvSRAM
NDA Required
Contact Sales
512Kb-16Mb
CY14B104K/LA
4Mb; 3.0 V
25, 45 ns; x8; Ind1
RTC2
CY14V104LA
4Mb; 3.0, 1.8 V I/O
25, 45 ns; x8; Ind1
CY14B104M/NA
4Mb; 3.0 V
25, 45 ns; x16; Ind1
RTC2
CY14V104NA
4Mb; 3.0, 1.8 V I/O
25, 45 ns; x16; Ind1
CY14V101PS
1Mb; 3.0, 1.8 V I/O
108 MHz QSPI5; Ind1
RTC2
Q215
CY14V101QS
1Mb; 3.0, 1.8 V I/O
108 MHz QSPI5; Ind1
Q215
CY14B101I
1Mb; 3.0 V
3.4 MHz I2C; Ind1
RTC2
CY14B101KA/LA
1Mb; 3.0 V
25, 45 ns; x8; Ind1 RTC2
CY14V101LA
1Mb; 3.0, 1.8 V I/O
25, 45 ns; x8; Ind1
CY14B101MA/NA
1Mb; 3.0 V
25, 45 ns; x16; Ind1
RTC2
CY14V101NA
1Mb; 3.0, 1.8 V I/O
25, 45 ns; x16; Ind1
CY14B101P
1Mb; 3.0 V
40 MHz SPI; Ind1
RTC2
CY14B512P
512Kb; 3.0 V
40 MHz SPI; Ind1
RTC2
CY14B512I
512Kb; 3.0 V
3.4 MHz I2C; Ind1
RTC2
CY14B256KA/LA
256Kb; 3.0 V
25, 45 ns; x8; Ind1
RTC2
CY14V/U256LA
256Kb; 3.0, 1.8V I/O
35 ns; x8; Ind1
CY14E256LA
256Kb; 5.0 V
25, 45 ns; x8; Ind1
STK14C88-5
256Kb; 5.0 V
35, 45 ns; x8; Mil4
CY14B256P
256Kb; 3.0 V
40 MHz SPI; Ind1 RTC2
CY14B256I
256Kb; 3.0 V
3.4 MHz I2C; Ind1
RTC2
64Kb-256Kb
STK11C68-5
64Kb; 5.0 V
35, 55 ns; x8; Mil4
STK12C68-5
64Kb; 5.0 V
35, 55 ns; x8; Mil4
CY14B064P
64Kb; 3.0 V
40 MHz SPI; Ind1
RTC2
CY14B064I
64Kb; 3.0 V
3.4 MHz I2C; Ind1
RTC2
1 Industrial grade: -40ºC to +85ºC
2 Real-time clock
3 Open NAND flash interface
4 Military grade: -55ºC to +125ºC
5 Quad Serial Peripheral Interface
6 Double Data Rate
Production
Development
QQYY
Availability
Sampling
Concept
Status
NVRAM Product Overview Product Family Presentation
Roadmap

18. Here’s How to Get Started
Vaulted: NVRAM Product Overview, , Rev *A
1. Select Cypress parallel nvSRAM products in the nvSRAM Product Selector Table and click “Order” for free samples 2. Download the App Note: A Comparison Between nvSRAMs and BBSRAMs 3. Register to access online technical support:
Programmable Logic Controller by Siemens
Router
by Cisco
Slot Machine
by IGT
RAID Card by LSI
Avionics Subsystem
by Rockwell Collins
NVRAM Product Overview Product Family Presentation
Getting Started

19. NVRAM Product Overview Product Family Presentation
References and Links
New slide
Cypress Nonvolatile products website:
The source for all of our publicly available nonvolatile product documentation and collateral
Cypress Nonvolatile products roadmap: Cypress Nonvolatile RAM Roadmap
Datasheets and NDA roadmap requests: Cypress Sales Representative or
Application notes: Nonvolatile Products Application Notes
Knowledge base articles: Nonvolatile Products Knowledge Base Articles
Download the SPI Guide for F-RAM
Download the application note: A Comparison Between nvSRAMs and BBSRAMs
Select Cypress serial F-RAM products in the F-RAM Product Selector Table and click “Order” for free samples
Select Cypress parallel nvSRAM products in the nvSRAM Product Selector Table and click “Order” for free samples
Register to access online technical support:
NVRAM Product Overview Product Family Presentation
References