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ECE 875: Electronic Devices
Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University
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Lecture 16, 14 Feb 14 HW 04: FRI: Pr. 2.07 Chp. 02: pn junction:
Experimental measurements for concentration: Hall effect – Chp. 01: material: measure VAB, and I, choose dimensions and Bext C-V – Chp. 02: pn junction Examples VM Ayres, ECE875, S14
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Which: are you in forward or reverse bias?
Jgen = ? OR Jrec = ? Which: are you in forward or reverse bias? What happens to the depletion region WD? VM Ayres, ECE875, S14
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1/tg = everything that’s left in U
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Jgen-rec = q U length Jgen-rec = tg is given = 1 x 10-5 sec
If: Assume: 300 K:
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Vext = Vrev = -2 V
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Lecture 16, 14 Feb 14 HW 04: FRI: Pr. 2.07 Chp. 02: pn junction:
Experimental measurements for concentration: Hall effect – Chp. 01: material: measure VAB, and I, choose dimensions and Bext C-V – Chp. 02: pn junction Examples VM Ayres, ECE875, S14
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Remember this sequence in real research: find:
Charge Q and charge density r Electric field E Potential y Energy barrier q y Depletion region WD or equivalent local region C-V I-V
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Abrupt junction: Q and r = Constant values E (x) yi(x) q yi(x)
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For Abrupt junction: find:
Charge Q and charge density r Electric field E Potential y Energy barrier q y
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Charge density r = all relevant concentrations:
VM Ayres, ECE875, S14
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For Abrupt junction: find:
Charge Q and charge density r Electric field E Potential y Energy barrier q y
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Internal electric field E (x): must find separately on p-side and n-side:
Note: Linear: VM Ayres, ECE875, S14
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Internal electric field E (x): must find separately on p-side and n-side:
VM Ayres, ECE875, S14
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Internal electric field E (x):
Note: Linear: VM Ayres, ECE875, S14
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Solve for maximum value of E –field:
VM Ayres, ECE875, S14
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For Abrupt junction: find:
Charge Q and charge density r Electric field E Potential y Energy barrier q y
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Find: potential yi(x):
(Practical: you may be able to measure a potential drop: yi(x2) - yi(x1) ) + Can integrate this! VM Ayres, ECE875, S14
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Potential yi(x): must find separately on p-side and n-side:
p-side of depletion region: VM Ayres, ECE875, S14
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Potential yi(x): must find separately on p-side and n-side:
n-side of depletion region: VM Ayres, ECE875, S14
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Example: find the potential drop across the p-side of the depletion region
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Answer: potential DROP:
Eq’n (15a) VM Ayres, ECE875, S14
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At least have an experimental estimate of E max
ybi is the potential drop across the whole depletion region – what you mainly measure. At least have an experimental estimate of E max Can we say anything about this factor VM Ayres, ECE875, S14
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ybi is the potential drop across the whole depletion region – what you mainly measure.
You know how you doped NA and ND – but could have hidden impurities or a bad doping process WD = VM Ayres, ECE875, S14
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An experimental measure for the Abrupt junction: C-V curve:
VM Ayres, ECE875, S14
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Useful parts on C-V graph: slope concentration N
intercept equilibrium potential ybi V = Vbattery VM Ayres, ECE875, S14
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The 2 x kT/q correction factor:
Shielding by neutral region electrons Shielding by neutral region holes VM Ayres, ECE875, S14
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Example: (a) find the slope and set up the calculation for N (b) find the intercept and set up the calculation for ybi V = Vbattery
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(a)
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(b)
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Example:
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Linearly graded junction: power of x raised by 1:
Q and r = linear = Constant x x E (x) yi(x) q yi(x)
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Linearly graded junction: power of x raised by 1:
r = linear = Constant “a” x x
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An experimental measure for the linearly graded junction: C-V curve:
Missing 2kT/q in (38) intercept Experimentally sweep this slope VM Ayres, ECE875, S14
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Example:
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Excel (below) or Matlab:
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Answer: Given: abrupt p+n junction
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