1. ADVANCES IN SINGLE ION DETERMINISTIC IRRADIATION ASIDI
NEW EXPERIMENT
3 YEARS
INFN PARTICIPANTS: LEGNARO (R.N. V. Rigato)
TORINO (R.L. E. Vittone)
PADOVA (R.L. S. Gerardin)
EXTERNAL: I.N.Ri.M. (L. Boarino)
Quantum Research Labs & Nanofacility Piemonte
Development of sub-micrometer ion beam collimation and related beam diagnostics for precise low intensity irradiation of materials, micro-devices and detectors
From single-ion hit to 104 ions/s - Energy: keV
Ions: 1H, 4He, 14N+ , 14N2+
LNL AN2000 Van de Graaff accelerator (0° micro-probe beamline)

2. ASIDI: MOTIVATION
Increased demand in the physics community (mostly INFN) to perform experiments using MeV single ion techniques with sub-micrometer precision
Routine test (detectors)
Damage (electronics, detectors)
Characterization of the electronic features of micro-devices and detectors with unprecedented level of resolution
Material modification, functionalization (semiconductors, oxides, thin films)
Investigation of advanced material modifications at the nano (sub-micron) scale.
Implantation (diamond and other high band-gap semiconductors)
Overcome the limitations of the present ion microscopy based on the use of focusing systems (present spatial resolution > 2-3 m) affected by chromatic aberrations
Achromatic and sub-micron features in a single device
Advances in challenging technology for collimation of MeV ions in the sub-micrometer region and precision targeting
New fabrication techniques (laser, FIB + additive manufacturing)
Model of beam interaction with surfaces at low angles (BCA+grazing incidence)
Existing IBIC and SEU experience and expertize can be used to develop new unprecedented imaging and TERGETING techniques with space resolution down to ~100nm

3. ASIDI: ACTIVITIES

4. ASIDI: WP1 (beamline /accelerator tests)
14N+ , 14N2+ (1H, 4He),
Emittance, min/max energy, angular divergence, intensity
(non standard conditions)

5. ASIDI: WP2 COLLIMATORS - INFN
LNS: apparatus to modulate the properties of beam sensitive samples by means of 4.2 GeV gold ions. Pinhole collimator.” the pinhole diameter (down to 30 um up to now) sets the beam spot size “
A. Rovelli et al., Nucl. Instr. and Meth. in Phys. Res. B 240 (2005) 842–849
LNL: R. Cherubini et al.; V. Guidi (SHEILA / LODE)
the horizontal single-ion microbeam facility for single-cell irradiations at the INFN-LNL 7MV CN Van de Graaff accelerator (tantalum / silicon micro collimator, ~3 micron spot size).
S. Gerardi et al., Radiat. Res. (2005), Vol. 164, pp
M. Skoczylas et al., Radiat. Prot. Dosimetry (2011), Vol. 14 3, pp. 353–357

6. ASIDI: WP2 COLLIMATORS Micro collimators used since 1950s
Cell Irradiation at the University of Chicago using a collimator made by scratching a polished metal plate μm targeting accuracy with 0.3 to 1 MeV protons. (Zirkle and Bloom; Science 177 [3045](1953)487 «Irradiation of Parts of Individual Cells» 
1994 Folkard (Gray Labs (UK) Collimator of MeV beams for cell irradiation (tapered glass capillary)
2003 Nebiki / Narasawa Kiochi Univ. Japan (tapered capillary microbeam, claim gain factor) …
GANIL, RIKEN, ETH, Tokyo (Tapered glass capillary collimation )
G. Dollinger (1999 Munich–SNAKE Tandem 14MeV µprobe- slits with bent silicon- high radius)
J. Meijer (Bochum - Leipzig), A. Persaud (Berkeley) Nitrogen/phosphorus nano-implantation combining a low-energy (about 5 keV) ion beam with the tip of an atomic force microscope (AFM) in which a nano-hole is drilled and used as a movable mask. (Appl. Phys. A 83, 321–327 (2006))
F. Allen (Berkeley) 2006 Silicon Nitride membrane with 100nm holes matrix, highly charged ions

7. ASIDI: WP2 New Aperture scheme
Micro-hole drilling (physical or chemical removal)
Materials: metals
Very high aspect ratio (50-100)
Wall shaping and inlet/outlet holes FIB finishing
Micro-hole engineering
Deposition via ionized sputtering (Cu+, Mo+) by HiPIMS
Finishing with FIB
2.0MeV protons, r=20um, Copper
MC calculations, Rigato 2017

8. ASIDI: WP2 collimator alignment and single ion system

9. ASIDI : BEAM IMAGING (WP3)
FLOATING-GATE SENSOR
Measuring the size of sub-mm beam and the effectiveness of the used collimators presents unique challenges
WP3 activity aims at developing a sensor capable of measuring the area of a sub-mm beam, using commercial planar NAND Flash memories

10. ASIDI: BEAM IMAGING RESOLUTION
FLOATING-GATE SENSOR
NAND Flash devices have a large integration density (the highest in the industry) and are very sensitive to radiation, as shown by several publication evaluating them for use in space
01
State of the art devices have feature sizes (F) smaller than 20 nm
A sensor with high spatial resolution can be developed

11. ASIDI: BEAM IMAGING RESOLUTION RADIATION EFFECTS ON FLOATING GATES
Radiation impinging on a floating gate causes a reduction in the stored charge
In turn this leads to a threshold voltage shift, which, when large enough causes, an upset (error)
A memory can be effectively turned into a radiation detector
With multi-level cell architecture and small feature size, the cells programmed with a proper pattern can be upset by lowly-ionizing particles, with LET as low as 0.2 MeV/mg∙cm2
However, non-volatility and the storage mechanisms make it possible to detect even lower LET with multiple strikes (charge loss by the individual strikes is additive)
M.Bagatin, S. Gerardin, A. Paccagnella, Semicond. Sci. Technol. 32(2017)033003

12. ❶ ❷ ASIDI: WP3 Beam dignostics by IBIC
OBJECTIVE: Development of a sensors/systems to localize the sub-micrometer beam onto the image plane and to measure the spatial resolution
Ion Beam Induced Charge (IBIC) injects charge through the surface into the electrically active regions of electronic devices
Charge collection from device maps electrically active regions and shows recombination ❶
Development of a new position sensitive detectors based on IBIC technique.
Two strategies:
Radiation detectors with micro-structures generated by local damage induced by ion beams
Localization of the ion beam impact position through the triangulation of charge signals induced in different sensitive electrodes. ❷
IAEA-CRP ( ) “Utilization of Ion Accelerators for Studying and Modelling of Radiation Induced Defects in Semiconductors and Insulators” F11016:

13. ASIDI: WP4 Sub-micro Functionalization of Advanced Materials
Micro- and sub-micro-collimated beams as tools for engineering at a mesoscopic scale key materials for current and innovative technologies
ADVANCED Materials
1) SUPERCONDUCTORS, e.g. cuprate superconductors and iron-based pnictides.
ion-beam-induced modifications of critical parameters such as critical temperature, critical current density and irreversibility line.
vortex channeling in mesoscopic structures (coherence effects).
2) FUNCTIONAL OXIDES (es. ZnO, SnO2, In2O3, CdO, Ga2O3, TiO2).
modulation of the carrier concentration (conductivity) through the local control of irradiation-induced oxygen vacancies.
Defect-induced localized magnetic moments
3) FERROMAGNETIC MATERIALS
Ion beam induced transition from antiferrimagnetic to ferromagnetic in multiferroic films and local tilt of the magnetization plane.
Modification of resistivity transition temperature, magnetic transition temperature and electrical conductivity in thin manganite films.
4) DIAMOND
Controlled N implantation and vacancy creation for the generation of color center patterns at the micrometer scale (single photon emitters…esp. DIESIS)

14. Detector examples of interest
ASIDI: WP5 INNOVATIVE SENSORS TEST & DAMAGE
OBJECTIVES:
1) Response of sensitive area of pixelated detector structures to the impact of single charged ionizing particles on very accurately localized positions (sub-micron resolution)
2) Radiation damage due to localized impact of ionizing particles on sensitive area and ancillary structures (e.g. guard regions) including RO electronics
Detector examples of interest
State of the art light sensors → Silicon photo-multipliers (SPM)
Innovative pixels sensors for charged particles

15. ASIDI: WP5 LIGHT SENSORS → SiPM
Trend in SiPM is to go for tiny cells

16. → call for MeV energy beam with sub-micron geometrical accuracy
ASIDI: WP5 LIGHT SENSORS → SiPM
FBK
Tech.
Ultra
Hig h
Density
O(mm) wide low efficiency or inactive regions
O(mm) thin active regions (high field multiplication)
→ call for MeV energy beam with sub-micron geometrical accuracy
in order to study detector response and radiation damage to charge deposition accurately and precisely located on critical regions

17. Courtesy G.F.dalla Betta
ASIDI: WP5 INNOVATIVE SENSORS
Trend in pixel detectors is endowing tracking with timing ❶ ❷ ❸
APIX concept:
CMOS SPADs
in coincidence
3D pixel sensors
+ timing
Low Gain Avalanche
Detectors
Courtesy L. Pancheri
Univ. Trento -TIFPA
Courtesy L. Pancheri
Univ. Trento -TIFPA
Courtesy G.F.dalla Betta
Univ. Trento -TIFPA

18. ❶ ❷ ❸ ASIDI: WP5 INNOVATIVE SENSORS
Trend in pixel detectors is endowing tracking with timing ❶ ❷ ❸
APIX concept:
CMOS SPADs
in coincidence
3D pixel sensors
+ timing
Low Gain Avalanche
Detectors
Critical regions:
O(mm) wide low efficiency or inactive regions
O(mm) thin active regions (high field or electrode regions)
→ call for MeV energy beam with sub-micron geometrical accuracy
in order to study detector response and radiation damage to charge
deposition accurately and precisely located

19. ASIDI: People and FTE
INRiM (L. Boarino, E. Enrico)

20. ADVANCES IN SINGLE ION DETERMINISTIC IRRADIATION
SERVICES 2018
LNL: 1 mese/uomo officina meccanica
Supporto Servizio utenti allestimento punto misura
PADOVA: 1 mese uomo meccanica
2 mesi uomo elettronica
TORINO: 1 mese uomo meccanica
1 mese uomo elettronica
LNL 2018: main items
Measurement point setup
Micro-collimator production
6 axis hexapod for precision alignment
XY positioner (TARGETING)
Z motion (travel 100mm)
Thermostated vessel
High Vacuum feedthroughs
ReadOut Electronics
Precision mechanics

21. Grazie per l’attenzione!