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SILICON IN PHOTONICS S.K.MISHRA ANUJ SRIVASTAVA Under the Guidance of
A technical Seminar presentation 2009 on SILICON IN PHOTONICS Under the Guidance of S.K.MISHRA Presented by ANUJ SRIVASTAVA SEEMANTA ENGINEERING COLLEGE ELECTRONICS AND TELECOMMUNICATION ENGINEERING RegNo: RollNo: 10-A-64
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Contents Introduction Features of Photonics Silicon Material
Silicon Light Source Filtering Light Silicon Modulator Silicon based photo detector Disadvantage Conclusion Reference Presented by: ANUJ SRIVASTAVA
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Introduction Silicon photonics is an evolving technology in which data is transferred among computer chips by optical rays. Optical rays can carry far more data in less time than electrical conductors. Its overarching goal is to develop high volume, bolt-and-go optical components using silicon. While silicon is opaque in the visible spectrum, it is transparent at the infrared wavelengths used in optical transmission, hence it can guide light. Presented by: ANUJ SRIVASTAVA
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Features of - Photonics
phase insensitive. frequency conversion → WDM meets perfectly the requirements of ultra fast all data optical data. processing and regeneration. alternative or supplement to semiconductor-based photonics. Presented by: ANUJ SRIVASTAVA
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Silicon Material Amorphous silicon Porous silicon Black silicon
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Light propagation through silicon crystal
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Silicon Light Source The work towards a silicon-based emitter is ongoing but still far from nature. Until an efficient, reliable silicon based light source is available, a photonic integrated system will need to use a conventional III-V material light emitter. Presented by: ANUJ SRIVASTAVA
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Filtering Light To cause the laser to generate only one specific wavelength, the light can be filtered by a grating, which reflects a specific set of wavelengths in a different direction. The specific wavelengths needed for communication can be individually selected and directed toward other photonic components. Presented by: ANUJ SRIVASTAVA
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Silicon Modulator Schematic of a Mach-Zehnder interferometer modulator with two phase shifter sections . Presented by: ANUJ SRIVASTAVA
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Silicon Based Photo Detector
Si1-x Gex waveguide-based photodetector on a SOI wafer. The waveguide is formed by the ridge of p-Si material and is running perpendicular to the cross-section. The SiGe MQW are inside the region labeled SiGe. Presented by: ANUJ SRIVASTAVA
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Disadvantage Production is not efficient but cost is efficient.
Wave guides and fibers are harder to use than wire. The components are more expansive. Presented by: ANUJ SRIVASTAVA
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Conclusion From the above report it can be concern that Silicon modulators operating at 2.5 GHz have demonstrated two orders of magnitude improvement over other known Si-based modulators, with theoretical modeling indicating performance capacities beyond 10 GHz. Presented by: ANUJ SRIVASTAVA
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Reference www.research.ibm/photonics www.portal.acm.org
Professor-lorenzo pavesi Torento university Professor-david j.lockwood Institute for microstructural sciences National research council canada B.jalai,M.paniccia and G.reed,IEE Microwave Magazine (June ) Presented by: ANUJ SRIVASTAVA
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Thank You !!!
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