1. Nanotechnologies for Electronics

2. Nano? The “nano” prefix comes from old greek: very very small
yotta Y 1024
zetta Z 1021
exa E 1018
peta P 1015
tera T 1012
giga G 109
mega M 106
kilo k 103
etto h 102
deca da 101
deci d 10-1
centi c 10-2
milli m 10-3
micro m 10-6
nano n 10-9
pico p 10-12
femto f 10-15
atto a 10-18
zepto z 10-21
yocto y 10-24
The “nano” prefix comes from old greek: very very small
In science is the billionth of a meter

3. Dust mite

6. 2000
1950

7. 1965: n. of transistors doubled every 2 years, until the atomic limit is reached …

9. Technology roadmap

14. Why smaller?

16. Intel 32 nm interconnect

20. Towards the Moore’s law end?
Cost reduction is reaching the limit.

21. NO ROADMAP–CLUSTERS OF INVENTIONS(*)
Room for Nobel Prize
EVOLUTION/ROADMAP (*)
(*) – Modified by Bruno Murari 21 21

22. System-in-a-Box: a digital brain with analog muscles and interfaces22

23. Need to bring “More Moore” and “More than Moore” at work!
Mechanical
Digital
Analog
Optical
SIP
More than
Moore
More Moore
Fluidics
Bio SW
Organics
Programming
model
DFM 23

24. Nanotechnological approaches
“Top-down” –starting with a larger component or substrate and carving away material (like a sculpture).
In nanotechnology: patterning by using lithography and etching away material, as in building integrated circuits
“Bottom-up” –assembling smaller components to build something more complex.
In nanotechnology: self-assembly of atoms and molecules, as in chemical and biological systems

25. Video Intel

27. INTEL Tick-Tock Model

28. Interconnect technology

29. Top-down fabrication
Method used by integrated circuit industry to fabricate computer chips down to ~ 15 nm size
Intel’s transistors
It makes use of depositing thin films, then “lithography” and plasma etching to make films into desired patterns on a silicon wafer.

30. Top down approach Pattern Transfer substrate Coating or stripping step
Spin coating
Wafer
resist
substrate
Lithography
After x process steps
substrate
Developing
substrate
Remover
Lift-Off
Etching
metal
Pattern
Transfer

31. Typical Instrumentation
substrate
Spin coating
Exposure
Developing
Cleaning
Instrumentation
Film thickness
measurement
Cleaning
Spin coating
Exposure
Developing
Inspection
wet bench
(eye-) shower for
accidents with acids
storage for chemicals
stove / hotplate
refrigerator
spin coater
Film Thickness Probe
Lithographic tool
optical microscope
sputtering machine
SEM
Process step
Spin coating
Film thickness
measurement
Exposure
Developing
Inspection

32. Hi-Res Lithographies Mask transfer:
Optical Lithography DUV with Phase shifting masks (~50 nm)
X-Ray/EUV lithography (~20 nm)
Imprint Lithography (~10 nm)
Direct writing
Electron Beam Lithography ( ~ 10 nm)
Ion Beam Lithography ( ~ 10 nm)
Scanning Proximal Probe Lithographies ( ~ 1 nm)
Holographic/laser Litography ( ~ 100 nm) 3D
Two photon lithography
DLP/laser lithography
The minimum feature:
0.5 l/NA=0.5 l/ nsen

33. APPROACHING THE LIMIT OF TOP DOWN NANOTECHNOLOGIES

34. APPROACHING THE LIMIT OF TOP DOWN NANOTECHNOLOGIES

35. The minimum feature:
0.5 l/NA=0.5 l/ nsen

36. Interdisciplinarietà nelle nanotecnologie: la strategia
Top down
Optical lithography  Semiconductors
Electron beam lithography  Semiconductors
X-ray lithography  Semiconductors
Soft Lithographies  Organics, semiconductors
Bottom-up
Self organized epitaxy  Semiconductor nanostructures
Self-assembling  Supramolecular structures (organics)
Biomolecular self organization  Biophysics, physiology