1. Date of download: 10/10/2017
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From: Single-Crystalline, Nanoporous Gallium Nitride Films With Fine Tuning of Pore Size for Stem Cell Engineering
J. Nanotechnol. Eng. Med. 2014;5(4): doi: /
Figure Legend:
TEM analysis of nanoporous GaN films. (a) The nanopores uniformly cover the surface of GaN film. (b) Higher magnification image shows the pore size is ∼20 nm (doping concentration = 5 × 1018 cm−3 and etching voltage = 10 V). (c) Selected-area electron diffraction pattern (SAD) of the nanoporous GaN membrane shows the sixfold symmetry along the [0001] axis. The scale bar in (a) is 200 nm and (b) is 20 nm.