1. Product Family Presentation: Automotive Asynchronous SRAM
Cypress Has the Industry’s Broadest Portfolio of
High-Speed, Low-Power and On-Chip ECC SRAMs
Automotive Asynchronous SRAM Product Family Presentation
Cover 1

2. Modern Automotive Systems Need Ultra-Reliable SRAMs
Modern automotive systems cannot tolerate single-bit errors in SRAMs
Traditional SRAMs get corrupted by single-bit errors caused by unavoidable cosmic background radiation
Advanced computing systems will crash if there are bit errors in their SRAM configuration1 memories
Automotive data logging systems require ultra-reliable, low-power SRAMs to store critical data for long periods
Automotive manufacturers require high-speed SRAMs with Error-Correcting Code2 (ECC) for critical applications
Driver Assistance System by Hella
Infotainment System by Hyundai
Engine Control Unit by Bosch
Image alignment
Cypress is a market leader in the Asynchronous SRAM space, and offers the broadest portfolio of fast asynchronous and low-power asynchronous SRAM (MoBL™) devices. Asynchronous SRAMs are used in a wide variety of industrial, medical, commercial, automotive and military applications that require the highest standards of reliability and performance. Best-in class process technology and manufacturing; steadfast customer support; and high quality design ensure that Cypress asynchronous SRAM devices meet and exceed expectations. Cypress continues to invest into SRAM technology to create new and innovative products even as a number of manufacturers have exited the space.
Modern automotive systems require ultra-reliable, high-speed, low-power SRAMs with on-chip ECC
1 Memory devices used to boot up system configuration registers, where a single-bit error can cause a system crash
2 Data encoded with extra parity bits to detect and correct bit errors
Market Vision 2

3. Cypress Is the SRAM Market Leader
Cypress is the world’s largest, most experienced Asynchronous SRAM1 supplier with:
>35% share in the automotive market
10 generations of Asynchronous SRAM designs
More R&D investment than any competitor
Cypress has the broadest Asynchronous SRAM portfolio, offering:
A one-stop shop for all automotive Asynchronous SRAM needs in Infotainment, Powertrain and driver-assistance systems
Automotive high-speed SRAMs from 256Kb to 16Mb
Automotive low-power SRAMs from 256Kb to 16Mb
Eight new ultra-reliable SRAMs with on-chip Error-Correcting Code for single-bit error detection and correction
Three new ultra-reliable PowerSnooze2 SRAMs, which enable both 10-ns access time and low power consumption
Cypress is the most dependable Asynchronous SRAM supplier, offering:
Product support for >10 years
Lead times of ≤6 weeks with >99% on-time delivery
Multiple qualified fabs, assembly sites and test sites
For update
Cypress is the global market leader in Asynchronous SRAMs with the broadest automotive portfolio
1 An SRAM device in which read or write operations do not require an external clock
2 A Fast SRAM with a deep-sleep mode in addition to a conventional standby mode
Market Positioning 3

4. Terms You Will Hear Today
Asynchronous SRAM
An SRAM device in which read or write operations do not require an external clock
Fast SRAM
High-speed Asynchronous SRAMs with an access time of ≤20 ns
More Battery Life™ (MoBL®) SRAM
Low-power Asynchronous SRAMs with ≤2-µA/Mb standby current
Also known as MicroPower™ SRAM
Soft Error
A bit error caused by cosmic background radiation
Failures-in-Time (FIT) Rate
Reliability measurement of the projected failure rate of a device per megabit of data (FIT/Mb)
One FIT/Mb equals one projected bit failure per Mb of the data stored over one billion hours of device operation
Error-Correcting Code (ECC)
Data encoded with extra parity bits to detect and correct bit errors
PowerSnooze™ SRAM
A Fast SRAM with a deep-sleep mode in addition to a conventional standby mode
For example, the 12-ns 16Mb offering has a deep-sleep current of ≤1.37 µA/Mb and a standby current of ≤1.87 mA/Mb
ERR Pin
A status pin on Cypress Asynchronous SRAMs with on-chip ECC that indicates the occurrence of a single-bit error
ToA 4

5. Design Problems Engineers Face
FIT Rates of <10 FIT/Mb are unachievable in standard SRAMs without on-chip ECC
Today’s standard SRAMs have FIT Rates of 150-1,500 FIT/Mb
Correcting Soft Errors with system-level ECC solutions forces undesirable system design trade-offs
System-level ECC solutions increase design complexity and cycle time
They also require additional memory and error-correcting chips, increasing board space and cost
Automotive systems require high-performance SRAMs with high speed and low standby current
A typical 16Mb high-speed SRAM with a 10-ns access time consumes 30-mA standby current
A typical 16Mb low-power SRAM with a 16-µA standby current has an access time greater than 35 ns
End-of-life decisions from SRAM suppliers force board redesign and product requalification
The automotive market requires long product life cycles (>10 years) and suppliers with staying power
Cypress’s Asynchronous SRAMs solve these problems with:
A FIT rate of <0.1 FIT/Mb, which is 1,000x to 10,000x lower than that of standard SRAMs
A single-chip solution with on-chip ECC that reduces design complexity, board space, cycle time and cost
A 10-ns access time and a 22-µA deep-sleep current (PowerSnooze SRAM) that is 1,000x lower than the 30-mA standby current of conventional 16Mb high-speed SRAMs
Support for >10 years on all Asynchronous SRAMs
Cypress offers the broadest portfolio of high-performance automotive SRAMs with on-chip ECC and backs it up with the long-term support and the staying power you need
Design Problems 5

6. Cypress 2013 Annual Report Cover
Cypress is so proud of its
Automotive design wins that we listed them on the cover of our 2013 Annual Report
Solution 6

7. Cypress Automotive Asynchronous SRAMs vs. Competition’s
Low-Power SRAM Features CY62x IS65X
Access Time (TAA)
45 ns, 55 ns, 70 ns
Standby Current (ISB1)
7 µA
20 µA
Grade
Auto A2, E3
Operating Voltage (VCC) V
On-Chip ECC
16Mb
Not available
Soft Error Rate4
<0.1 FIT/Mb
<1 FIT/Mb
High-Speed SRAM Features CY7Cx IS64x
Access Time (TAA)
10 ns
Active Current (ICC5)
100 mA
40 mA
Grade
Auto A2, E3
Operating Voltage (VCC) V
On-Chip ECC
8Mb, 16Mb
1-8Mb
Standby Current
10 µA6
Not available
Soft Error Rate5
<0.1 FIT/Mb
<0.5 FIT/Mb
1 Maximum value for 4Mb at 3.0 V, +85C
2 AEC-Q100: -40ºC to +85ºC
3 AEC-Q100: -40ºC to +125ºC
4 The rate at which a device is predicted to have Soft Errors
5 Typical value for 4Mb at 3.0 V, +85C
6 Value for 4Mb PowerSnooze SRAM
Competition 7

8. Automotive Portfolio: Asynchronous SRAM
Fast SRAM
Low-Power SRAM (MoBL®1)
PowerSnooze™2 SRAM
Serial SRAM
Non-ECC3
ECC3
Quad-SPI4, ECC3
32Mb-128Mb
CY6218x 64Mb; 2.5, 3.0 V
55 ns; x8, x16
Other densities
NDA Required
Contact Sales
Other densities
NDA Required
Contact Sales
CY7C107x
32Mb; 3.3 V
12 ns; x8, x16
CY6217x 32Mb; 2.5, 3.0, 5.0 V
55 ns; x8, x16
2Mb-16Mb
CY7C106x
16Mb; 1.8, 3.3 V
10 ns; x8, x16, x32
NEW
CY7C106x 16Mb; V
10 ns; x8, x16, x32
Grade: E5
Q215
CY6216x 16Mb; 3.0 V
45 ns; x8, x16
Grade: A6
CY6216x 16Mb; V
45 ns; x8, x16, x32
Grade: E5
NEW
Q215
CY7S106x 16Mb; V
10 ns; x8, x16, x32
Grade: E5
NEW
Q215
CY7C105x
8Mb; 3.3 V
10 ns; x8, x16
CY7C Mb; 3.3 V
10 ns; x24
CY7C105x 8Mb; V
10 ns; x8, x16, x32
Grade: E5
NEW
Q215
CY6215x 8Mb; 3.0, 5.0 V
45 ns; x16
Grades: A6 and E5
CY6215x 8Mb; V
45 ns; x8, x16, x32
Grade: E5
Q315
CY7S105x 8Mb; V
10 ns; x8, x16, x32
Grade: E5
NEW
Q215
CY7C104x
4Mb; 3.3, 5.0 V
10 ns; x8, x16
Grades: A6 and E5
CY7C Mb; 3.3 V
10 ns; x24
NEW
CY7C104x 4Mb; V
10 ns; x8, x16
Grade: E5
CY6214x 4Mb; 3.0, 5.0 V 45 ns; x8, x16
Grades: A6 and E5
NEW
CY6214x 4Mb; V
45 ns; x8, x16
Grade: E5
CY7S104x 4Mb; V
10 ns; x8, x16
Grade: E5
NEW
CY7C Mb; 3.3 V
10 ns; x16
Grades: A6 and E5
CY7C1024 3Mb; 3.3 V
10 ns; x24
CY6213x
2Mb; 3.0 V
45 ns; x8, x16
Grades: A6 and E5
64Kb-1Mb
CY7C1020
512Kb; 2.6, 3.3 V
15 ns; x16
Grade: E5
CY7C1019/21 1Mb; 2.6, 3.3, 5.0 V
10 ns; x8, x16
Grades: A6 and E5
CY6212x 1Mb; 3.0, 5.0 V
45 ns; x8, x16
Grades: A6 and E5
CY7C185
64Kb; 5.0 V
15 ns; x8
CY7C Kb; 5.0 V
12 ns; x8
Grades: A6 and E5
CY Kb; 5.0 V
55 ns; x8
Grades: A6 and E5
Production
Development
QQYY
Availability
Sampling
Concept
Automotive
Industrial
1 More Battery Life™
2 Fast SRAM with low-power sleep mode
3 Error-correcting code
4 Serial peripheral interface
5 AEC-Q100: -40ºC to +125ºC
6 AEC-Q100: -40ºC to +85ºC
Roadmap 8

9. Automotive Portfolio: Asynchronous SRAM
Fast SRAM
Low-Power SRAM (MoBL®1)
PowerSnooze™2 SRAM
Serial SRAM
Non-ECC3
ECC3
Quad-SPI4, ECC3
32Mb-128Mb
CY6218x 64Mb; 2.5, 3.0 V
55 ns; x8, x16
CY6218/9x 64Mb; V
55 ns; x8, x16, x32
Grade: E5
CYSS108x 64Mb; V
12 ns; x8, x16, x32
Grade: E5
CY7C107x
32Mb; 3.3 V
12 ns; x8, x16
CY6217x 32Mb; 2.5, 3.0, 5.0 V
55 ns; x8, x16
CY6217x 32Mb; V
45 ns; x8, x16, x32
Grade: E5
CYSS107x 32Mb; V
12 ns; x8, x16, x32
Grade: E5
2Mb-16Mb
CY7C106x
16Mb; 1.8, 3.3 V
10 ns; x8, x16, x32
CY7C106x 16Mb; V
10 ns; x8, x16, x32
Grade: E5
NEW
Q215
CY6216x 16Mb; 3.0 V
45 ns; x8, x16
Grade: A6
CY6216x 16Mb; V
45 ns; x8, x16, x32
Grade: E5
NEW
Q215
CY7S106x 16Mb; V
10 ns; x8, x16, x32
Grade: E5
NEW
Q215
CY7C105x
8Mb; 3.3 V
10 ns; x8, x16
CY7C Mb; 3.3 V
10 ns; x24
CY7C105x 8Mb; V
10 ns; x8, x16, x32
Grade: E5
NEW
Q215
CY6215x 8Mb; 3.0, 5.0 V
45 ns; x16
Grades: A6 and E5
CY6215x 8Mb; V
45 ns; x8, x16, x32
Grade: E5
Q315
CY7S105x 8Mb; V
10 ns; x8, x16, x32
Grade: E5
NEW
Q215
CY7C104x
4Mb; 3.3, 5.0 V
10 ns; x8, x16
Grades: A6 and E5
CY7C Mb; 3.3 V
10 ns; x24
CY7C104x 4Mb; V
10 ns; x8, x16
Grade: E5
NEW
Q315
CY6214x 4Mb; 3.0, 5.0 V 45 ns; x8, x16
Grades: A6 and E5
CY6214x 4Mb; V
45 ns; x8, x16
Grade: E5
NEW
Q315
CY7S104x 4Mb; V
10 ns; x8, x16
Grade: E5
NEW
Q315
CY7C Mb; 3.3 V
10 ns; x16
Grades: A6 and E5
CY7C1024 3Mb; 3.3 V
10 ns; x24
CY6213x
2Mb; 3.0 V
45 ns; x8, x16
Grades: A6 and E5
64Kb-1Mb
CY7C1020
512Kb; 2.6, 3.3 V
15 ns; x16
Grade: E5
CY7C1019/21 1Mb; 2.6, 3.3, 5.0 V
10 ns; x8, x16
Grades: A6 and E5
CY6212x 1Mb; 3.0, 5.0 V
45 ns; x8, x16
Grades: A6 and E5
CYSS101 1Mb; 1.8, V
40 MHz, 108 MHz Grade: E5
CY7C185
64Kb; 5.0 V
15 ns; x8
CY7C Kb; 5.0 V
12 ns; x8
Grades: A6 and E5
CY Kb; 5.0 V
55 ns; x8
Grades: A6 and E5
CYSS064/256/ Kb; 1.8, V 40 MHz, 108 MHz Grade: E5
Production
Development
QQYY
Availability
Sampling
Concept
Automotive
Industrial
1 More Battery Life™
2 Fast SRAM with low-power sleep mode
3 Error-correcting code
4 Serial peripheral interface
5 AEC-Q100: -40ºC to +125ºC
6 AEC-Q100: -40ºC to +85ºC
Roadmap 9

10. Product Overview: Fast SRAM Family with On-Chip ECC
Applications
Family Table
Infotainment systems
Driver assistance
Driver information
Powertrain
Telematics
Density
MPN
Access Time
Supply Current
(Max. at 85ºC) 4 Mb
CY7C104x 10 ns 45 mA 8
CY7C105x 60 16
CY7C106x
110
Features
Block Diagram
Access time: 10 ns or 12 ns (see Family Table)
Bus-width configurations: x8, x16, x32
Wide operating voltage range: V
Available in automotive temperature (A1 and E2) grades
Industry-standard, RoHS-compliant packages
Error-correcting code (ECC) to detect/correct single-bit errors
Bit-interleaving to avoid multi-bit errors
Error-indication (ERR) pin to indicate single-bit errors
Packages: 48-pin VFBGA, 48-pin TSOP1
Fast SRAM with ECC
SRAM Array
Address Decoder
ECC Encoder
Input Buffer
8, 16, 32
Data
18-23
I/O Mux
ERR
Address
SRAM Array
Sense Amps
ECC Decoder
Control Logic CE OE WE
BHE3
BLE4
Collateral
Availability
Preliminary Datasheet: Contact Sales
Sampling: Q (16Mb)
Production: Q (16Mb)
1 AEC-Q100: -40ºC to +85ºC
2 AEC-Q100: -40ºC to +125ºC
3 Byte high enable
4 Byte low enable
Product Details 10

11. Product Overview: MoBL® SRAM Family with On-Chip ECC
Applications
Family Table
Infotainment systems
Telematics
Density
MPN
Standby Current (Max. at 85ºC)
Standby Current
(Typ. at 25ºC) 4 Mb
CY6214x 8 µA
2.5
CY6215x 9
3.0 16
CY6216x
4.6 32
CY6217x 58
9.0 64
CY6218x
Features
Block Diagram
Access time: 45 ns for 16Mb
Standby current: 16 µA for 16Mb
Multiple bus-width configurations: x8, x16 and x32
Wide operating voltage range: V
Available in automotive temperature (A2 and E3) grades
Industry-standard, RoHS-compliant packages
Error-correcting code (ECC) to detect/correct single-bit errors
Bit-interleaving to avoid multi-bit errors
Error-indication (ERR) pin to indicate single-bit errors
Packages: 48-pin VFBGA, 48-pin TSOP1
MoBL®1 SRAM with ECC
Address Decoder
SRAM Array
ECC Encoder
Input Buffer
8, 16, 32
18-23
I/O Mux
Data
ERR
Address
Sampling and prodn date updated from Q115 to Q215
SRAM Array
Sense Amps
ECC Decoder
Control Logic CE OE WE
BHE4
BLE5
Collateral
Availability
Preliminary Datasheet: Contact Sales
Sampling: Q (16Mb)
Production: Q (16Mb)
1 More Battery Life™
2 AEC-Q100: -40ºC to +85ºC
3 AEC-Q100: -40ºC to +125ºC
4 Byte high enable
5 Byte low enable
Product Details 11

12. Product Overview: Fast SRAM Family with PowerSnooze™
Applications
Family Table
Infotainment systems
Driver assistance
Driver information
Powertrain
Telematics
Density
MPN
Access Time
Deep Sleep Current
(Max. at 85ºC) 4 Mb
CY7S104x 10 ns 12 µA 8
CY7S105x 22 16
CY7S106x
Features
Block Diagram
Access time: 10 ns or 12 ns (see Family Table)
PowerSnooze™: Additional power-saving (deep-sleep) mode
Deep-sleep current: 23 µA for 16Mb (see Family Table)
Multiple bus-width configurations: x8, x16 and x32
Wide operating voltage range: V
Available in automotive temperature (A1 and E2) grades
Industry-standard, RoHS-compliant packages
Error-correcting code (ECC) to detect/correct single-bit errors
Bit-interleaving to avoid multi-bit errors
Packages: 48-pin VFBGA, 48-pin TSOP1
Fast SRAM with PowerSnooze™
ECC Encoder
Input Buffer
Address Decoder
8, 16, 32 20
SRAM Array
I/O Mux
Data
Address
ERR
Power Management Block
(Enables PowerSnooze)
Sense Amps
ECC Decoder
Sampling and prodn date updated from Q115 to Q215
Control Logic
DS3 CE OE WE
BHE4
BLE5
Collateral
Availability
Preliminary Datasheet: Contact Sales
Sampling: Q (16Mb)
Production: Q (16Mb)
1 AEC-Q100: -40ºC to +85ºC
2 AEC-Q100: -40ºC to +125ºC
3 Deep-sleep
4 Byte high enable
5 Byte low enable
Product Details 12

13. Product Overview: Serial SRAM Family
Applications
Family Table
Infotainment systems
Density
MPN
Clock Frequency
Standby Current
(Typ. at 25ºC) 1 Mb
CYSS101x
108
MHz µA 32
CYSS132x 8 64
CYSS164x
Features
Block Diagram
High speed: 108-MHz serial peripheral interface (SPI)
Ultra-low standby current: 6 µA at 85ºC (1Mb)
SPI: Single, dual and quad channels
Wide operating voltage range: V
Available in automotive temperature (A1 and E2) grades
Error-correcting code (ECC) to detect/correct single-bit errors
Packages: 8-pin SOIC, 8-pin TSSOP
SRAM Array
SPI Control Logic
and
Instruction Decoder
Memory Data
Address Control
Register
CS3
Clock
I/O0
I/O1
I/O2
I/O3
Serial SRAM
Collateral
Availability
Preliminary Datasheet: Contact Sales
Contact Sales
1 AEC-Q100: -40ºC to +85ºC
2 AEC-Q100: -40ºC to +125ºC
3 Chip select
Product Details 13

14. Entertainment and Communications Subsystems
SRAM Solution Example:
Automotive Infotainment System
SRAM Value
Block Diagram
Design Challenges
Limited availability of automotive Asynchronous SRAMs
with Error-Correcting Code
Long lead times to sampling and production
Short life cycle of available products
Cypress SRAM Solution
Asynchronous SRAMs with on-chip ECC in automotive grade
≤6 weeks lead times in production at >99% on-time delivery
>10 years of support and a roadmap for the future
Touch Controller 2
I2C
Navigation,
Entertainment and Communications Subsystems 2 2
CAN 2
MCU 16
SRAM 2
USB
Suggested Collateral
Automotive Brochure
Automotive Product Selector Guide
Automotive Infotainment System
by Hyundai
SRAM stores information required to communicate with the satellite transceiver.
SRAM is used for storage of variables & dynamic databases.
How To Get Started
Click on the links above to download the SRAM Portfolio Order Samples from your distributor: Register at for online technical support
Product Example 14

15. Here’s How to Get Started
1. Find the Cypress equivalent for a competitor’s part: 2. Select products from the product selector table: 3. Register to access online technical support: 4. Take our Asynchronous SRAM training: 5. Download the Cypress automotive roadmap: 6. Visit the Asynchronous SRAM with ECC webpage:
Getting Started 15

16. Automotive Asynchronous SRAM Product Family Presentation
APPENDIX
Automotive Asynchronous SRAM Product Family Presentation
Appendix 16

17. 16Mb MoBL® SRAM Product Selector Guide
Part Number
Bus Width
Access Time
# CE Pins
Voltage
Temp
Package
CY62167G30-45BVXA
x16
45 ns 2 V
-40 to 85°C
48-VFBGA
CY62167G30-55BVXE
55 ns
-40 to 125°C
CY62167G30-45ZXA
48-TSOP I
CY62167G30-55ZXE
16Mb MoBL SRAM Part Numbering Decoder
CY G XX XX XA/E
Pb-Free Automotive Temperature Grades; A = -40ºC to 85ºC, E = -40ºC to 125ºC
Package Type: BV = 48-VFBGA, Z = 48-TSOP I
Speed Grade: 45 = 45 ns, 55 = 55 ns
Voltage Range: 30 = V
Process Technology: G = 65 nm
Bus Width: 7 = x16
6216: 16Mb MoBL SRAM Family
Company ID: CY = Cypress
Product Selector Guide 17

18. 16Mb Fast SRAM Product Selector Guide
Part Number
Bus Width
Access Time
# CE Pins
Voltage
Temp
Package
CY7C1061G30-10ZXE
x16
10 ns 1 V
-40 to 125°C
48-TSOP I
CY7C1061G30-10BV1XE
48-VFBGA
16Mb Fast SRAM Part Numbering Decoder
CY 7C G XXX XE
Pb-Free Automotive Temperature Grade; E = -40ºC to 125ºC
Package Type: Z = 48-TSOP I, BV1 = 48-VFBGA
Speed: 10 = 10 ns
Voltage Range: 30 = V
Process Technology: G = 65 nm
Bus Width: 1 = x16
7C106: 16Mb Fast SRAM Family
Company ID: CY = Cypress
Product Selector Guide 18

19. References and Links
Asynchronous SRAM with ECC webpage: Asynchronous SRAM training: Cypress Automotive roadmap: Cypress Product Selector Guide: Knowledge Base articles: Asynchronous SRAM datasheets: Asynchronous SRAM app notes: SRAM Board Design Guidelines training video: 4Mb Asynchronous SRAM with ECC preliminary datasheets: Cypress equivalent for a competitor’s part: Product selector table: Online technical support:
References 19

20. Automotive 16Mb SRAM with On-Chip ECC
$5.44
$2.13
$0.15
$7.72
Competitor
Asynchronous Fast SRAM (R1LV1616RBG-5SI)
without ECC
Price: $5.441
BOM Integration
Additional SRAM for ECC data (RMLV0416EGBG-4S2)
Price: $2.131
Additional Value
Cost of creating MCU firmware for ECC logic
Value: $0.152
Competitor
RMLV0416EGBG-4S2
BOM Integration Value
Cost of Creating MCU Firmware for ECC Logic
Total Additional Value
Total Value Delivered
Automotive MicroPower SRAM with ECC:
Total Cost:
19% Total Savings:
CY62167G30-45BVXA
$6.271
$1.45
1 Approximate 100ku pricing
2 5 man-weeks at $3,000 per man-week = $15,000 (amortized over 100ku)
Pricing 20