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Carbon Nanotube FETs (CNFETs): Highly Energy-Efficient Sub-10 nm VLSI

Published byVincent Parsons Modified over 6 years ago

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Presentation on theme: "Carbon Nanotube FETs (CNFETs): Highly Energy-Efficient Sub-10 nm VLSI"— Presentation transcript:

1 Carbon Nanotube FETs (CNFETs): Highly Energy-Efficient Sub-10 nm VLSI
VLSI circuit benefits 9X energy efficiency vs. FinFET Processor cores (wires included) 3-D NanoSystem benefits 1,000X energy efficiency vs. 2-D systems Naturally-enabled by CNFETs FinFET 3D Resistive RAM Massive storage thermal nanowire 1D CNFET, 2D FET Compute, RAM access CNFET STT-MRAM Quick access energy/cycle (nJ) 9X benefit ultra-dense, fine-grained vias: No TSV 7 nm node: OpenSparc T2 1D CNFET, 2D FET Compute, Power, Clock clock frequency (GHz) silicon-compatible in collaboration with IMEC 1 NEEDS Annual Review: May 8-9, 2017

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