1. Available detectors in Liverpool
Two mask sets, both accommodate various type of sensors.

2. Mask set 1

3. First 6” wafers fabricated by Micron
6” wafers fabricated by Micron, 300µm thick n-in-p
Strip sensors
Pixel detectors:
FE-I3, FE-I4, PSI-46, MPIX-II,
APC, APR (wire bondable pixels for studying charge sharing with Beetle readout)
Pad detectors:
RD-50, PSI, MPI guard rings,
Narrow edges (8, 4, 2, 1 rings)
Errors in FE-I4 device layout make them not usable for bump-bonding, but does allow us to start evaluating sensor performance
2 Medipix sensors (available if possible to bump bond individual sensors).
in the double metal “n-in-p” FZ process

4. Wire bondable pixels

5. Cluster split in readout channels by 8 channels by ganging pattern
Ganged pixels for charge sharing studies: pre-irradiation test
Cluster split in readout channels by 8 channels by ganging pattern
With non-irradiated device, we can see hits with Alibava. Working to modify clustering code to match ganged geometry.

6. Slim edge studies

7. Good breakdown properties pre and after irradiation with 600µm GR’s
FEI3, FEI4 with RD guard rings (600 mm)

8. New 6” Micron Pixel Wafer
5 FE-I4 tiles/wafer
4 with 8 MPI “style” guard rings
1 with 6 RD-50 “style” guard rings
14 FE-I4 single chips/wafer
2 with RD-50 “style” guard rings (390 mm wide)
8 with 8 MPI “style” guard rings (390 mm wide)
4 with 4 MPI “style” guard rings (200 mm wide)
12 FE-I3 SC
2 Medipix-II tiles, 4 Medipix SC
+ 4 diodes, test structures
Possible bumping on the full wafer. Tiles usable for ‘module 0’s’. Available thicknesses (n-in-p): 75, 150, 300 µm. Can be produced on 200µm.