1. ESR for the muon DT Minicrate System
System Overview
ESR for the muon DT Minicrate System
CERN. November 3rd 2003.

2. OVERVIEW OF THE MC ELECTRONICS2
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
OVERVIEW OF THE MC ELECTRONICS
MINICRATE

3. RESPONSABILITIES ROB (Read-Out Board)3
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
RESPONSABILITIES
ROB (Read-Out Board)
• 128 channels, 4 HPTDC per board.
ROL (Read-Out Link board)
CIEMAT (Madrid)
TRB (Trigger server boards)
• Select the two best muon candidates in each board.
• 128 channels, 32 BTI´s per board, 4 TRACO per board.
CCB (Control Board)
CCB-Link
INFN (Padova)
SB (Server boards)
• Selects two best muon candidates in the chamber.
INFN (Bologna)
Mechanics
All

4. LOCATION IN THE DETECTOR4
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
LOCATION IN THE DETECTOR
Electronics attached to chambers:
Drastic minimisation of cables.

5. MC TO CHAMBER CONNECTION5
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
MC TO CHAMBER CONNECTION
SLΦ1
SLΘ
TRB/ROB Φ
TRB/ROB Φ
TRB/ROB Φ
TRB/ROB Φ
TRB/ROB Θ
TRB/ROB Θ
SLΦ2
Nº of channels/board tries to find a compromise between high granularity (multiplication of common components) and low granularity (increase the number of unused channels).

6. DISTRIBUTION ON THE DETECTOR6
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
DISTRIBUTION ON THE DETECTOR
Left and right minicrates depending on the service layout on each wheel inside the iron yoke.

7. MINICRATE LAYOUT 7 ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
MINICRATE LAYOUT

8. CABLES OUTGOING FROM A MINICRATE8
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
CABLES OUTGOING FROM A MINICRATE

9. MINICRATE ASSEMBLY SEQUENCE9
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
MINICRATE ASSEMBLY SEQUENCE

10. MC LINKS CCB link ROB link TTC optical connection Alignment RPC10
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
MC LINKS
CCB link
TTC optical connection
Alignment
ROB link
RPC
RJ-45 copper link

11. 3.3 V Digital 5.0 V Digital MC POWER SUPPLY11
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
MC POWER SUPPLY
MINICRATE POWER CONSUMPTION: Min W
Max W
3.3 V Digital
The voltage at chamber input is nominally 4 V (as it is followed by low drop regulators).
The current at the load can be any value between 0 and 35 A.
PS must be designed to provide at least 20% more current than maximum nominally required: 42 A.
The voltage at the Load is nominally 6 V, as it is followed by one low drop regulator.
The current at the Load will be any value between 0 and 1.5 A.
PS must be designed to provide at least 20% more current than maximum nominally required: 1.8 A
5.0 V Digital

12. TRB’s & ROB’s 3.3V Low drop regulator CCB 5V Low drop regulator12
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
MC POWER SUPPLY
Independent systems per wheel.
3.3V digital
TRB’s & ROB’s 3.3V Low drop regulator
on each board 4V
6 V
5 V digital
CCB 5V Low drop regulator 6V
8 V
TOWERS
MINICRATE
5 EASY MODULES A3003
25 EASY MODULE A3050
~1 m
10-20 m cable
Patch connector

13. Refrigeration by 15ºC water circulation.13
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
WATER COOLING SYSTEM
Refrigeration by 15ºC water circulation.

14. MC PROTOTYPING We have produced:14
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
MC PROTOTYPING
We have produced:
• 2 MB1 prototypes: Padova: Read-Out and Trigger part assembled and operated in May 03 test beam.
Madrid
• 1 MB2 at ISR: for testing insertion on chamber.
• 1 MB3 in Legnaro: waiting to be equipped with TRB´s.
• 1 MB1 definitive (left) in Madrid.

15. BURN-IN In the MIL-STD-883E methods 1015 and 5004 of the MIL handbook
ESR / MUON DT MINICRATE SYSTEM. Overview.
November 3rd , 2003
BURN-IN
In the MIL-STD-883E methods 1015 and 5004 of the MIL handbook (
It is stated that for class level B devices (i.e. general applications)
a working point for a burn-in test is 125º C for 160 hours.
This screens off both infant mortality and early lifetime
failure. For just infant mortality the test time can be
reduced by a factor 0.25.
For converting to another temperature, use the Arrhenius law.
There is a parameterto to be set: the reaction activation energy. This has
a typical value of eV for most defects, including bond defects.
(see f.i INTEL manual on "Components Quality and Reliability" ).
Then with the Arrhenius law one gets a reaction deceleration factor
of about 10 when lowering the temperature from 125 to 60 degrees,
i.e. 160 hours at 125 become 1600 hours at 60º C.
Thus screening off just the infant mortality for boards
with all commercial components takes 400 hours at 60º C.