1. A high mobility III-V transistor demonstration for the
future “smart” electronics applications
M.-H. Liao* and L.-C. Chang
產業應用: A high mobility III-V transistor design for future “smart” electronics.
Applications for “smart” electronics
New material !
Intel
Process Demonstration

2. The III-V device demonstration ( with 3X higher mobility
than Si) by Gate Last and IMP free process in NTU
M.-H. Liao* and L.-C. Chang
Current Issues for the III-V device: (Blue Mark shows what we do in this work)
Low Density of state: QW structure.
Poor HK quality and high Dit: ALD-Al2O3 with F treatment + Gate Last process.
Stress Response: Band structure optimization by stress on different III-V structures (InAs).
SCE: FinFET structure and doping/thermal optimization.
Rsd reduction/Activation Difficulty: Highly Epi-doped with IMP Free + Gate Last process.
Id-Vg
Tested Pattern
Process Demonstration
Id-Vd
Good epi-quality

3. A Chamber Design with the calibrated Simulation Model and
Monitor by remote sensors in semiconductor process for 18” wafer
M.-H. Liao*, C.-H. Chen, and S.-C. Kao
產業應用: A Chamber Design and Optimization for Semiconductor Industry (18”).
Flow field
Temperature profile
Using CFD Software
Re-Build a reactor to test/calibrate the simulation model and design
Change the design
Movie: TWISTER 1996, Spielberg, Hellen Hunt, Bill Paxton, Cary Elwes
Simulation and Calibration
Inspiration:
Our Work:
Concept :
Chamber
Chamber Design:
Sensors can record the temp., pressure, and flow in the chamber and we can compare them with the simulation data to do the calibration.
Gas flow
Sensors

4. Defect extraction with high resolution by PALS in SiGe
and III-V material
M.-H. Liao* and C.-H. Chen
產業應用: High resolution defect (concentration, type, size..) extraction method.
Due to the high emission radiative lighting source, PALS can provide the high resolution on
defect extraction.
- Defect type, size, concentration all can be extracted by this spectra in III-V and SiGe material.