2. Resistors:
Sheet resistances are process and material dependent. Typical values:
- Gate poly-Si: Rsh= W/□
- High resistivity poly: Rsh= kW/□
- Metal (Al) films: Rsh= mW/□
- Doped Si regions
- S and D regions: Rsh= W/□
- Well regions: Rsh= kW/□

3. Absolute tolerances: ≈ 20% Relative tolerances: Smaller (depend on the dimensions and lay-out) Contant resistances: Depend on the technology and size.
Typical (max) values for AMS 035, A= 0.4 μm × 0.4 μm
- Metal - poly: 2 (10) W/contact
- Metal - n type S/D: 30(100) W/contact
- Metal - p type S/D: 60(150) W/contact
(n parallelled contacts decreases the resistance n times,
and increases the reliability !)

4. Capacitors: - Passive (fixed) capacitors - Varactors

7. (a) (b) C C C V V t C depletion t layer C n - type bulk inversion
accumulation C
max t ox C i
depletion t d
layer C d n -
type
bulk C
min V GS V T
(a)
(b)

15. Package related problems
A typical RF-IC chip

16. Cross-section of a typical RF-IC package

18. I/O PADS (From Davis Harris, CMOS VLSI Design, 2004)
Pad types
VDD / GND
Output
Input
Bidirectional
Analog
Analog pads pass analog voltages directly in or out of chip
- No buffering
- Protection circuits must not distort voltages

19. ESD Protection Static electricity builds up on human body
Shock delivered to a chip can puncture thin gates
Must dissipate this energy in protection circuits before it reaches the gates
The basic ESD protection circuit with a current limiting resistor
and diode clamps

20. Typical large-area ESD protection diode structures
Typical large-area ESD protection diode structures. - High current carrying and power dissipation capability - As low as parasitic capacitance

21. ESD testing
Human body model to simulate the ESD hazard when a person tuches to a device.